STU40N2LH5 [STMICROELECTRONICS]
N-channel 25V, 0.01 OHM, 40A, DPAK, IPAK STripFET V Power MOSFET; N沟道25V ， 0.01欧姆， 40A ， DPAK ， IPAK的STripFET V功率MOSFET
| 型号： | STU40N2LH5 |
| 厂家： | 
ST |
| 描述： | N-channel 25V, 0.01 OHM, 40A, DPAK, IPAK STripFET V Power MOSFET |
| 文件： | 总15页 (文件大小：920K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STD40N2LH5
STU40N2LH5
N-channel 25 V, 0.01 Ω, 40 A, DPAK, IPAK
STripFET™ V Power MOSFET
Features
Type
VDSS
RDS(on) max
ID
STD40N2LH5
STU40N2LH5
25 V
25 V
0.0118 Ω
0.0124 Ω
40 A
40 A
3
3
2
■ R
* Q industry benchmark
g
1
DS(on)
1
■ Extremely low on-resistance R
DS(on)
DPAK
IPAK
■ Very low switching gate charge
■ High avalanche ruggedness
■ Low gate drive power losses
Application
■ Switching applications
Figure 1.
Internal schematic diagram
Description
This STripFET™ V Power MOSFET technology
is among the latest improvements, which have
been especially tailored to achieve very low on-
state resistance providing also one of the best-in-
class figure of merit (FOM).
Table 1.
Device summary
Order codes
Marking
Package
DPAK
IPAK
Packaging
STD40N2LH5
STU40N2LH5
40N2LH5
40N2LH5
Tape and reel
Tube
September 2009
Doc ID 14919 Rev 3
1/15
www.st.com
15
Contents
STD40N2LH5, STU40N2LH5
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
6
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2/15
Doc ID 14919 Rev 3
STD40N2LH5, STU40N2LH5
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
VDS
VGS
ID
Drain-source voltage (VGS=0)
Gate-Source voltage
25
22
V
V
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
40
A
ID
28
A
(1)
IDM
160
35
A
PTOT
Total dissipation at TC = 25 °C
Derating factor
W
0.23
110
W/°C
mJ
(2)
EAS
Single pulse avalanche energy
Tj
Operating junction temperature
Storage temperature
-55 to 175
°C
Tstg
1. Pulse width limited by safe operating area
2. Starting Tj = 25 °C, ID = 24 A, VDD = 12 V
Table 3.
Symbol
Thermal resistance
Parameter
Value
Unit
Rthj-case
Rthj-amb
Tl
Thermal resistance junction-case max
Thermal resistance junction-case max
Maximum lead temperature for soldering purpose
4.3
100
275
°C/W
°C/W
°C
Doc ID 14919 Rev 3
3/15
Electrical characteristics
STD40N2LH5, STU40N2LH5
2
Electrical characteristics
(T
= 25°C unless otherwise specified)
CASE
Table 4.
Symbol
Static
Parameter
Test conditions
Min.
Typ.
Max. Unit
Drain-source breakdown
voltage
V(BR)DSS
ID = 250 µA, VGS= 0
25
V
VDS = 25 V
1
µA
µA
Zero gate voltage drain
current (VGS = 0)
IDSS
VDS = 25 V, TC = 125 °C
10
Gate body leakage current
(VDS = 0)
IGSS
VGS
=
22 V
±100
nA
V
VGS(th) Gate threshold voltage
VDS= VGS, ID = 250 µA
GS= 10 V, ID= 20 A
SMD version
GS= 10 V, ID= 20 A
1
V
0.01 0.0118
0.0106 0.0124
0.0135 0.0155
0.0141 0.0161
Ω
Ω
Ω
Ω
V
Static drain-source on
resistance
RDS(on)
VGS= 5 V, ID= 20 A
SMD version
VGS= 5 V, ID= 20 A
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Min.
Typ.
Max. Unit
Input capacitance
Output capacitance
Ciss
Coss
Crss
700
160
27
pF
VDS = 20 V, f=1 MHz,
VGS = 0
-
-
-
pF
pF
Reverse transfer
capacitance
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=15 V, ID = 40 A
VGS = 5 V
6.3
2.4
2.7
nC
nC
nC
-
(Figure 14)
Table 6.
Symbol
Switching on/off (resistive load)
Parameter
Test conditions
Min.
Typ.
Max. Unit
V
DD= 10 V, ID= 20 A,
td(on)
tr
Turn-on delay time
Rise time
4.8
ns
RG= 4.7 Ω, VGS= 10 V
(Figure 13 and Figure 18)
-
-
13.6
ns
V
DD= 10 V, ID= 20 A,
td(off)
tf
Turn-off delay time
Fall time
17.6
3.5
ns
RG= 4.7 Ω, VGS= 10 V
(Figure 13 and Figure 18)
-
-
ns
4/15
Doc ID 14919 Rev 3
STD40N2LH5, STU40N2LH5
Electrical characteristics
Min. Typ. Max. Unit
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
ISD
Source-drain current
40
A
A
-
-
ISDM
Source-drain current (pulsed)(1)
160
VSD
Forward on voltage
ISD= 20 A, VGS=0
1.1
V
ISD= 40 A,
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
17.6
9.2
1
ns
nC
A
di/dt =100 A/µs,
VDD= 20 V, Tj = 25 °C
(Figure 15)
Qrr
-
IRRM
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Doc ID 14919 Rev 3
5/15
Electrical characteristics
STD40N2LH5, STU40N2LH5
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Thermal impedance
AM05425v1
I
D
(A)
100
100µs
1ms
10
10ms
Tj=150°C
Tc=25°C
1
Sinlge
pulse
0.1
10
VDS(V)
0.1
1
100
Figure 4.
Output characteristics
Figure 5.
Transfer characteristics
AM05426v1
AM05427v1
I
D
(A)
I
D
(A)
V
GS=10V
120
100
80
100
VDS=3V
80
60
40
5V
4V
60
40
20
0
20
0
3V
1
2
4
V
DS(V)
0
2
3
0
4
6
VGS(V)
8
10
Figure 6.
Normalized B
vs temperature Figure 7.
Static drain-source on resistance
VDSS
AM05429v1
AM05428v1
R
DS(on)
(mΩ)
BVDSS
(norm)
ID=20A
GS=10V
14.0
12.0
10.0
V
1.10
1.05
1.00
8.0
6.0
4.0
0.95
0.90
2.0
0.0
20
30
40
10
-50
-25
25 50 75
J(°C)
ID(A)
0
125
150 T
0
100
6/15
Doc ID 14919 Rev 3
STD40N2LH5, STU40N2LH5
Electrical characteristics
Figure 8.
Gate charge vs gate-source voltage Figure 9.
Capacitance variations
AM05430v1
AM05431v1
V
GS
C
(V)
(pF)
V
DD=12.5V
=40A
12
10
8
I
D
1000
Ciss
6
Coss
100
10
4
2
0
Crss
2
4
8
15
20
10
Qg(nC)
V
DS(V)
0
6
5
10
Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs
vs temperature temperature
AM05432v1
AM05433v1
V
GS(th)
R
DS(on)
(norm)
(norm)
1.2
1.9
1.1
1.0
1.7
1.5
0.9
0.8
0.7
1.3
1.1
0.9
0.6
0.5
0.4
0.7
0.5
-50
150
-50
-25
-25
0
25 50 75
125
T
J(°C)
0
25 50 75
125 150 T
J(°C)
100
100
Figure 12. Source-drain diode forward
characteristics
AM05434v1
VSD
(V)
TJ=-55°C
1.1
1.0
0.9
0.8
0.7
0.6
TJ=150°C
TJ=25°C
0.5
0.4
0
30
5
10
15 20 25
35
40
ISD(A)
Doc ID 14919 Rev 3
7/15
Test circuits
STD40N2LH5, STU40N2LH5
3
Test circuits
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
VDD
12V
47kΩ
100nF
1kΩ
2200
3.3
µF
RL
µF
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
D.U.T.
VD
RG
VGS
2200
µF
D.U.T.
VG
2.7kΩ
47kΩ
PW
1kΩ
PW
AM01468v1
AM01469v1
Figure 15. Test circuit for inductive load
switching and diode recovery times
Figure 16. Unclamped Inductive load test
circuit
L
A
A
A
B
D
FAST
DIODE
L=100µH
VD
G
2200
µF
D.U.T.
B
3.3
µF
VDD
S
3.3
µF
1000
µF
B
VDD
25
Ω
ID
D
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 17. Unclamped inductive waveform
Figure 18. Switching time waveform
ton
toff
tdoff
V(BR)DSS
tr
tf
tdon
VD
90%
10%
90%
IDM
10%
VDS
ID
0
0
VDD
VDD
90%
VGS
10%
AM01472v1
AM01473v1
8/15
Doc ID 14919 Rev 3
STD40N2LH5, STU40N2LH5
Test circuits
Figure 19. Gate charge waveform
Doc ID 14919 Rev 3
9/15
Package mechanical data
STD40N2LH5, STU40N2LH5
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
10/15
Doc ID 14919 Rev 3
STD40N2LH5, STU40N2LH5
Package mechanical data
TO-251 (IPAK) mechanical data
mm.
typ
DIM.
min.
2.20
0.90
0.64
max.
2.40
1.10
0.90
0.95
5.40
0.60
0.60
6.20
6.60
A
A1
b
b2
b4
c
5.20
0.45
0.48
6.00
6.40
c2
D
E
e
2.28
e1
H
4.40
4.60
16.10
L
9.00
0.80
9.40
(L1)
L2
V1
1.20
0.80
10 o
0068771_H
Doc ID 14919 Rev 3
11/15
Package mechanical data
STD40N2LH5, STU40N2LH5
TO-252 (DPAK) mechanical data
mm.
DIM.
min.
typ
max.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
A
A1
A2
b
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
b4
c
c2
D
D1
E
5.10
6.40
6.60
E1
e
4.70
2.28
e1
H
4.40
9.35
1
4.60
10.10
L
L1
L2
L4
R
2.80
0.80
0.60
0 o
1
0.20
8 o
V2
0068772_G
12/15
Doc ID 14919 Rev 3
STD40N2LH5, STU40N2LH5
Packaging mechanical data
5
Packaging mechanical data
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
16.4
50
0.059
13.2 0.504 0.520
0.795
18.4 0.645 0.724
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
TAPE MECHANICAL DATA
2500
mm
MIN. MAX. MIN. MAX.
6.8 0.267 0.275
10.4 10.6 0.409 0.417
12.1 0.476
inch
DIM.
A0
B0
B1
D
7
1.5
1.5
1.6 0.059 0.063
0.059
D1
E
1.65 1.85 0.065 0.073
7.4 7.6 0.291 0.299
2.55 2.75 0.100 0.108
F
K0
P0
P1
P2
R
3.9
7.9
1.9
40
4.1 0.153 0.161
8.1 0.311 0.319
2.1 0.075 0.082
1.574
W
15.7
16.3 0.618 0.641
Doc ID 14919 Rev 3
13/15
Revision history
STD40N2LH5, STU40N2LH5
6
Revision history
Table 8.
Date
Document revision history
Revision
Changes
24-Jul-2008
23-Sep-2008
10-Sep-2009
1
2
3
Initial release
VGS value has been changed on Table 2 and Table 5
Document status promoted from preliminary data to datasheet.
14/15
Doc ID 14919 Rev 3
STD40N2LH5, STU40N2LH5
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Doc ID 14919 Rev 3
15/15
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