BUT92S [STMICROELECTRONICS]
250V, NPN, Si, POWER TRANSISTOR, TO-3, TO-3, 2 PIN;
| 型号： | BUT92S |
| 厂家： | 
ST |
| 描述： | 250V, NPN, Si, POWER TRANSISTOR, TO-3, TO-3, 2 PIN 局域网 开关 晶体管 |
| 文件： | 总4页 (文件大小：65K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BUT92
FAST-SWITCHING POWER TRANSISTOR
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SGS-THOMSON PREFERRED SALESTYPE
NPN TRANSISTOR
hFE > 10 AT IC =35A
HIGH EFFICIENCY SWITCHING
VERY LOW SATURATION VOLTAGE
RECTANGULAR SAFE OPERATING AREA
WIDE ACCIDENTAL OVERLOAD AREA
1
APPLICATIONS
2
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UNINTERRUPTABLE POWER SUPPLY
SWITCH MODE POWER SUPPLIES
MOTOR CONTROL
TO-3
(version "S")
DESCRIPTION
The BUT92 is a Multiepitaxial Planar NPN
Transistor in TO-3 package. It is intended for use
in high frequency and efficency converters,
switching regulators and motor control.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEV
VCEO
VEBO
IE
Parameter
Collector-Emitter Voltage (VBE = -1.5 V)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Emitter Current
Value
Unit
350
V
V
250
7
50
V
A
IEM
Emitter Peak Current
75
A
IB
Base Current
10
A
IBM
Base Peak Current
15
A
o
Ptot
Tstg
Tj
Total Power Dissipation at Tcase ≤ 25 C
250
W
oC
oC
Storage Temperature
Junction Temperature
-65 to 200
200
1/4
June 1997
BUT92
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
0.7
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICER
Collector Cut-off
Current (RBE = 10 Ω)
VCE = VCEV
VCE = VCEV Tc = 100 C
0.4
4
mA
mA
o
ICEV
IEBO
Collector Cut-off
Current
VCE = VCEV VBE = -1.5V
VCE = VCEV VBE = -1.5V Tc = 100 C
0.2
2
mA
mA
o
Emitter Cut-off
Current (IC = 0)
VEB = 7 V
1
mA
VCEO(sus) Collector-Emitter
Sustaining Voltage
IC = 0.2 A
L = 25 mH
IB = 3.5 A
250
7
V
VEB0
VCE(sat)
VBE(sat)
diC/dt
Emitter-Base Voltage IE = 50 mA
(IC = 0)
V
Collector-Emitter
Saturation Voltage
IC = 35 A
IC = 35 A
0.8
1.25
1.2
1.9
V
V
o
IB = 3.5 A Tj = 100 C
Base-Emitter
Saturation Voltage
IC = 35 A
IC = 35 A
IB = 3.5 A
IB = 3.5 A Tj = 100 C
1.2
1.2
1.5
1.5
V
V
o
Rated of Rise on-state VCC = 200V IB1 = 5.25 A RC = 0
125
200
A/µs
o
Collector Current
tp = 3µs
Tj = 100 C
VCE(3µs)
VCE(5µs)
Collector-Emitter
Dynamic Voltage
VCC = 200V
RC = 5.7 Ω
IB1 = 5.25 A
Tj = 100 C
3
6
3
V
o
Collector-Emitter
Dynamic Voltage
VCC = 200V
RC = 5.7 Ω
IB1 = 5.25 A
1.8
V
o
Tj = 100 C
INDUCTIVE LOAD
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ts
tf
tc
Storage Time
Fall Time
Crossover Time
VCC = 200 V
IC = 35 A
VBB = -5 V
RB2 = 0.7 Ω
VClamp = 250 V
IB1 = 3.5 A
1.4
0.15
0.3
3
0.4
0.7
µs
µs
µs
LC = 0.28 mH
o
Tj = 100 C
VCEW
Maximum Collector
Emitter Voltage
without Snubber
VCC = 50 V
VBB = -5 V
LC = 48 µH
ICWoff = 52 A
IB1 = 3.5 A
RB2 = 0.7 Ω
250
V
o
Tj = 125 C
* Pulsed : Pulse duration = 300 µs, duty cycle = 2%
2/4
BUT92
TO-3 (version S) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
11.00
1.47
TYP.
MAX.
13.10
1.60
MIN.
0.433
0.058
0.059
0.327
0.748
0.421
0.649
0.984
0.157
1.515
1.187
MAX.
0.516
0.063
0.065
0.351
0.787
0.437
0.677
1.023
0.161
1.547
1.193
A
B
C
D
E
G
N
P
R
U
V
1.50
1.65
8.32
8.92
19.00
10.70
16.50
25.00
4.00
20.00
11.10
17.20
26.00
4.09
38.50
30.00
39.30
30.30
A
D
P
C
G
R
P003O
3/4
BUT92
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. . .
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