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BUV11 [ISC]

isc Silicon NPN Power Transistor; ISC的硅NPN功率晶体管
BUV11
型号： BUV11
厂家： INCHANGE SEMICONDUCTOR COMPANY LIMITED    INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述：

isc Silicon NPN Power Transistor
ISC的硅NPN功率晶体管

晶体 晶体管
文件： 总2页 (文件大小：81K)
中文：  中文翻译
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INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
BUV11  
DESCRIPTION  
·Low Collector Saturation Voltage-  
: VCE(sat)= 0.6V (Max.) @IC= 6A  
·High Switching Speed  
·High DC Current Gain-  
: hFE= 20(Min.) @IC= 6A  
APPLICATIONS  
·Designed for high current, high speed, high power  
applications.  
Absolute maximum ratings(Ta=25℃)  
SYMBOL  
VCBO  
VCER  
VCEX  
VCEO  
VEBO  
IC  
PARAMETER  
VALUE  
250  
240  
250  
200  
7
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
RBE= 100Ω  
V
Collector-Emitter Voltage  
BE= -1.5V  
V
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
Collector Current-Continuous  
Collector Current-Peak  
Base Current-Continuous  
20  
A
ICM  
25  
A
IB  
4
A
Collector Power Dissipation  
@TC=25℃  
PC  
150  
200  
-65~200  
W
℃
℃
Tj  
Junction Temperature  
Tstg  
Storage Temperature Range  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Thermal Resistance,Junction to Case  
1.17  
℃/W  
Rth j-c  
isc Website：www.iscsemi.cn  
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
BUV11  
ELECTRICAL CHARACTERISTICS  
TC=25℃ unless otherwise specified  
SYMBOL  
VCEO(SUS)  
V(BR)EBO  
PARAMETER  
Collector-Emitter Sustaining Voltage  
Emitter-Base Breakdown Voltage  
Collector-Emitter Saturation Voltage  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Collector Cutoff Current  
CONDITIONS  
IC= 0.2A; IB= 0; L= 25mH  
IE= 50mA; IC= 0  
MIN  
200  
7
TYP.  
MAX  
UNIT  
V
V
IC= 6A; IB= 0.6A  
0.6  
1.5  
1.5  
1.5  
V
VCE  
VCE  
(sat)-1  
(sat)-2  
IC= 12A ;IB= 1.5A  
IC= 12A ;IB= 1.5A  
VCE= 160V; IB= 0  
V
V
VBE  
(sat)  
ICEO  
mA  
mA  
mA  
VCE= 250V;VBE= -1.5V  
VCE= 250V;VBE= -1.5V;TC=125℃  
1.5  
6.0  
ICEX  
IEBO  
hFE-1  
hFE-2  
fT  
Collector Cutoff Current  
Emitter Cutoff Current  
VEB= 5V; IC= 0  
1.0  
60  
DC Current Gain  
IC= 6A ; VCE= 2V  
20  
10  
8
DC Current Gain  
IC= 12A ; VCE= 4V  
IC= 1A;VCE= 15V, ftest= 4MHz  
Current-Gain—Bandwidth Product  
MHz  
Switching Times  
Turn-on Time  
0.8  
1.8  
0.4  
μs  
μs  
μs  
ton  
IC= 12A ;IB1=-IB2= 1.5A;  
VCC= 150V; RC= 12.5Ω  
Storage Time  
Fall Time  
ts  
tf  
isc Website：www.iscsemi.cn  

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