BUTW92_01 [STMICROELECTRONICS]
HIGH CURRENT NPN SILICON TRANSISTOR; 大电流NPN硅晶体管
| 型号： | BUTW92_01 |
| 厂家： | 
ST |
| 描述： | HIGH CURRENT NPN SILICON TRANSISTOR |
| 文件： | 总4页 (文件大小：43K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BUTW92
®
HIGH CURRENT NPN SILICON TRANSISTOR
■
■
STMicroelectronics PREFERRED
SALESTYPE
NPN TRANSISTOR
APPLICATIONS:
■
MOTOR CONTROL
■
HIGH FREQUENCY AND EFFICIENCY
CONVERTERS
3
2
DESCRIPTION
1
High current, high speed transistor suited for
power conversion applications, high efficency
converters and motor controls.
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCES
VCEO
VEBO
IE
Parameter
Collector-Emitter Voltage (VBE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Emitter-Current
Value
Unit
500
V
V
250
7
60
V
A
IEM
Emitter Peak Current (tp < 5ms)
Base Current
70
A
IB
15
A
IBM
Base Peak Current (tp < 5ms)
18
A
o
Ptot
180
W
oC
oC
Total Dissipation at Tc ≤ 25 C
Tstg
Tj
Storage Temperature
-65 to 150
150
Max. Operating Junction Temperature
1/4
September 2001
BUTW92
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
MAX
0.7
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
VCE = 450 V
VCE = 450 V
Min.
Typ.
Max.
Unit
ICES
Collector Cut-off
Current (VBE = -1.5V)
50
1
µA
mA
TC = 100oC
IEBO
VCES
VEBO
Emitter Cut-off Current VEB = 5 V
(IC = 0)
50
µA
Collector-Emitter
Voltage (VEB =0)
IC = 5 mA
500
7
V
Emitter-Base Voltage
(IC = 0)
IE = 50 mA
IC = 200 mA
V
VCEO(sus) Collector-Emitter
Sustaining Voltage
(IB=0)
250
V
VCE(sat)
VBE(sat)
hFE
Collector-Emitter
Saturation Voltage
IC = 60 A
IC = 60 A
IB = 15 A
IB = 15 A
0.8
1.1
1
1.5
V
V
TC = 100oC
TC = 100oC
Base-Emitter
Saturation Voltage
IC = 60 A
IC = 60 A
IB = 15 A
IB = 15 A
1.9
2
V
V
DC Current Gain
IC = 60 A
IC = 60 A
IC = 5 A
VCE = 3 V
9
6
VCE = 3 V TC = 100oC
VCE = 3 V
65
RESISTIVE LOAD
Storage Time
Fall Time
ts
tf
IC = 50 A
IB1 = -IB2 = 10 A
VCC = 250 V
1.2
250
1.4
300
µs
ns
* Pulsed: Pulse duration = 300 ms, duty cycle 1.5 %
2/4
BUTW92
TO-247 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.7
2.2
0.4
1
TYP.
MAX.
5.3
MIN.
0.185
0.087
0.016
0.039
0.079
0.118
MAX.
0.209
0.102
0.031
0.055
0.094
0.134
A
D
2.6
E
0.8
F
1.4
F3
F4
G
2
2.4
3
3.4
10.9
0.429
H
15.3
19.7
14.2
15.9
20.3
14.8
0.602
0.776
0.559
0.626
0.779
0.582
L
L3
L4
L5
M
34.6
5.5
1.362
0.217
2
3
0.079
0.118
P025P
3/4
BUTW92
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2001 STMicroelectronics – Printed in Italy – All Rights Reserved
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4/4
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