BUV11 [MOTOROLA]
20 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 150 WATTS; 20安培NPN硅功率金属晶体管200伏150瓦
| 型号： | BUV11 |
| 厂家： | 
MOTOROLA |
| 描述： | 20 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 150 WATTS |
| 文件： | 总4页 (文件大小：141K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by BUV11/D
SEMICONDUCTOR TECHNICAL DATA
20 AMPERES
NPN SILICON
POWER
. . . designed for high current, high speed, high power applications.
METAL TRANSISTOR
200 VOLTS
•
•
•
High DC current gain; h min. = 20 at I = 6 A
FE C
CE(sat) CE(sat) C
Very fast switching times:
max. = 0.8 µs at I = 12 A
Low V max. = 0.6 V at I = 6 A
, V
150 WATTS
T
F
C
CASE 1–07
TO–204AA
(TO–3)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V
200
250
7
CEO(sus)
V
CBO
V
EBO
Collector–Emitter Voltage (V
BE
= –1.5 V)
V
250
240
CEX
CER
Collector–Emitter Voltage (R
BE
= 100 Ω)
V
Collector–Current— Continuous
— Peak (pw
I
20
25
Adc
Apk
C
10 ms)
I
CM
Base–Current continuous
I
4
Adc
Watts
C
B
Total Power Dissipation @ T = 25 C
C
P
150
D
Operating and Storage Junction Temperature Range
T , T
–65 to 200
J
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
θ
1.17
C/W
JC
1.0
0.8
0.6
0.4
0.2
0
40
80
120
160
200
T
, TEMPERATURE (°C)
C
Figure 1. Power Derating
SWITCHMODE is a trademark of Motorola, Inc.
REV 7
Motorola, Inc. 1995
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
V
200
Vdc
CEO(sus)
(I = 200 mA, I = 0, L = 25 mH)
C
B
Collector Cutoff Current at Reverse Bias
I
mAdc
CEX
(V
CE
(V
CE
= 250 V, V
= 250 V, V
= –1.5 V)
= –1.5 V, T = 125 C)
1.5
6
BE
BE
C
Collector–Emitter Cutoff Current
(V = 160 V)
I
1.5
mAdc
V
CEO
CE
Emitter–Base Reverse Voltage
V
7
EBO
(I = 50 mA)
E
Emitter–Cutoff Current
I
1.0
mAdc
EBO
(V
EB
= 5 V)
SECOND BREAKDOWN
Second Breakdown Collector Current with base forward biased
I
Adc
S/b
(V
CE
(V
CE
= 30 V, t = 1 s)
= 140 V, t = 1 s)
5.0
0.15
1
ON CHARACTERISTICS
DC Current Gain
h
FE
(I = 6 A, V
(I = 12 A, V
CE
= 2 V)
= 4 V)
20
10
60
C
CE
C
Collector–Emitter Saturation Voltage
(I = 6 A, I = 0.6 A)
V
Vdc
Vdc
CE(sat)
0.6
1.5
C
B
(I = 12 A, I = 1.5 A)
C
B
Base–Emitter Saturation Voltage
(I = 12 A, I = 1.5 A)
V
1.5
BE(sat)
C
B
DYNAMIC CHARACTERISTICS
Current Gain — Bandwidth Product
f
T
8.0
MHz
(V
CE
= 15 V, I = 1 A, f = 4 MHz)
C
SWITCHING CHARACTERISTICS (Resistive Load)
Turn–on Time
t
0.8
1.8
0.4
µs
on
(I = 12 A, I = I = 1.5 A,
B1 B2
C
Storage Time
t
s
V
= 150 V, T = 12.5 Ω)
CC
C
Fall Time
t
f
1
Pulse Test: Pulse Width
300 µs, Duty Cycle
2%.
2
Motorola Bipolar Power Transistor Device Data
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
20
10
down. Safe operating area curves indicate I – V
limits of
C
CE
the transistor that must be observed for reliable operation
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 2 is based on T = 25 C; T
is
J(pk)
C
variable depending on power level. Second breakdown
limitations do not derate the same as thermal limitations.
At high case temperatures, thermal limitations will reduce
the power that can handled to values less than the limitations
imposed by second breakdown.
1
1
10
100
200
V
, COLLECTOR–EMITTER VOLTAGE (V)
CE
Figure 2. Active Region Safe Operating Area
2.0
1.6
1.2
0.8
100
I
/I = 8
V
= 4
C B
CE
V
CE
80
60
40
20
0
V
BE
0.4
0
0.1
1
10
20
100
0.1
1
10
20
100
I
, COLLECTOR CURRENT (A)
I
, COLLECTOR CURRENT (A)
C
C
Figure 3. “On” Voltages
Figure 4. DC Current Gain
3.0
V
CC
2.0
1.0
t
S
R
C
I
B2
t
on
0.4
0.3
V
R
C
= 150 V
CC
R
B
I
= 12.5
= 3.3
Ω
Ω
B1
t
F
R
0.2
B
I
/I = 8
C B
I
= I
B2
B1
0
4
8
12
16
20
R
– R : Non inductives resistances
B
C
I
, COLLECTOR CURRENT (A)
C
Figure 5. Switching Times versus
Collector Current
Figure 6. Switching Times Test Circuit
3
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
A
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
C
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO–204AA OUTLINE SHALL APPLY.
SEATING
PLANE
–T–
E
K
D 2 PL
0.13 (0.005)
INCHES
MIN MAX
1.550 REF
MILLIMETERS
M
M
M
T
Q
Y
DIM
A
B
C
D
E
MIN
MAX
39.37 REF
U
–––
0.250
0.038
0.055
1.050
–––
6.35
0.97
1.40
26.67
8.51
1.09
1.77
–Y–
L
V
H
0.335
0.043
0.070
2
1
G
H
K
L
0.430 BSC
0.215 BSC
0.440 0.480
0.665 BSC
10.92 BSC
5.46 BSC
B
G
11.18
12.19
16.89 BSC
N
Q
U
V
–––
0.151
1.187 BSC
0.131
0.830
–––
3.84
30.15 BSC
3.33
21.08
4.19
–Q–
0.165
0.188
M
M
0.13 (0.005)
T Y
4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
CASE 1–07
TO–204AA (TO–3)
ISSUE Z
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