BUV10 [ISC]
Silicon NPN Power Transistor; 硅NPN功率晶体管
| 型号： | BUV10 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：194K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BUV10
DESCRIPTION
·High Switching Speed
·High Current Capability
APPLICATIONS
·Designed for high current,high speed,high power applications.
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEX
VCER
VCEO
VEBO
IC
PARAMETER
VALUE
160
160
140
125
7
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
VBE= -1.5V
V
Collector-Emitter Voltage
RBE= 100Ω
V
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
Collector Crrent-Continuous
Collector Current-Peak
Base Current-Continuous
25
A
ICM
30
A
IB
6
A
Collector Power Dissipation
@TC=25℃
PC
150
200
-65~200
W
℃
℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Thermal Resistance,Junction to Case
1.0
℃/W
Rth j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BUV10
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
V(BR)EBO
PARAMETER
Collector-Emitter Sustaining Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
CONDITIONS
IC= 0.2A; IB= 0; L= 25mH
IE= 50mA; IC= 0
MIN
125
7
TYP.
MAX
UNIT
V
V
IC= 10A; IB= 1A
1.0
2.0
1.5
1.5
V
VCE
VCE
(sat)-1
(sat)-2
IC= 20A ;IB= 2A
V
IC= 10A; IB= 1A
V
VBE
(sat)
ICEO
VCE= 100V; IB= 0
mA
mA
mA
VCE= 160V;VBE= -1.5V
1.5
6.0
ICEX
IEBO
hFE-1
hFE-2
fT
Collector Cutoff Current
VCE= 160V;VBE= -1.5V;T=125℃
Emitter Cutoff Current
VEB= 5V; IC= 0
0.5
60
DC Current Gain
IC= 10A ; VCE= 4V
IC= 20A ; VCE= 4V
IC= 1A; VCE= 15V
20
10
8
DC Current Gain
Current-Gain—Bandwidth Product
MHz
isc Website：www.iscsemi.cn
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