首页 |元器件品牌

BUT92_03 [STMICROELECTRONICS]

FAST-SWITCHING POWER TRANSISTOR; 快速开关功率晶体管
BUT92_03
型号： BUT92_03
厂家： ST    ST
描述：

FAST-SWITCHING POWER TRANSISTOR
快速开关功率晶体管

晶体 开关 晶体管
文件： 总4页 (文件大小：47K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
BUT92  
®
FAST-SWITCHING POWER TRANSISTOR  
■
STMicroelectronics PREFERRED  
SALESTYPE  
■
■
■
■
■
■
NPN TRANSISTOR  
hFE > 10 AT IC =35A  
HIGH EFFICIENCY SWITCHING  
VERY LOW SATURATION VOLTAGE  
RECTANGULAR SAFE OPERATING AREA  
WIDE ACCIDENTAL OVERLOAD AREA  
1
2
APPLICATIONS  
■
■
■
UNINTERRUPTABLE POWER SUPPLY  
SWITCH MODE POWER SUPPLIES  
MOTOR CONTROL  
TO-3  
(version "S")  
DESCRIPTION  
The BUT92 is a Multiepitaxial Planar NPN  
Transistor in TO-3 package. It is intended for use  
in high frequency and efficency converters,  
switching regulators and motor control.  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCEV  
VCEO  
VEBO  
IE  
Parameter  
Collector-Emitter Voltage (VBE = -1.5 V)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Emitter Current  
Value  
Unit  
350  
V
V
250  
7
50  
V
A
IEM  
Emitter Peak Current (tp = 10 ms)  
Base Current  
75  
A
IB  
10  
A
IBM  
Base Peak Current  
(tp = 10 ms)  
15  
A
o
Ptot  
250  
W
oC  
oC  
Total Power Dissipation at Tcase ≤ 25 C  
Storage Temperature  
Tstg  
Tj  
-65 to 200  
200  
Junction Temperature  
1/4  
February 2003  
BUT92  
THERMAL DATA  
Rthj-case Thermal Resistance Junction-case  
Max  
0.7  
oC/W  
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)  
Symbol  
Parameter  
Test Conditions  
VCE = VCEV  
Min.  
Typ.  
Max.  
Unit  
ICER  
Collector Cut-off  
Current (RBE = 10 Ω)  
0.4  
4
mA  
mA  
o
VCE = VCEV  
Tc = 100 C  
ICEV  
IEBO  
Collector Cut-off  
Current (VBE = -1.5V)  
VCE = VCEV  
VCE = VCEV  
0.2  
2
mA  
mA  
o
Tc = 100 C  
Emitter Cut-off  
Current (IC = 0)  
VEB = 7 V  
1
mA  
VCEO(sus) Collector-Emitter  
Sustaining Voltage  
(IB = 0)  
IC = 0.2 A  
L = 25 mH  
250  
7
V
VEB0  
VCE(sat)  
VBE(sat)  
diC/dt  
Emitter-Base Voltage IE = 50 mA  
(IC = 0)  
V
Collector-Emitter  
Saturation Voltage  
IC = 35 A IB = 3.5 A  
IC = 35 A IB = 3.5 A Tc = 100 C  
0.8  
1.25  
1.2  
1.9  
V
V
o
Base-Emitter  
Saturation Voltage  
IC = 35 A IB = 3.5 A  
IC = 35 A IB = 3.5 A Tc = 100 C  
1.2  
1.2  
1.5  
1.5  
V
V
o
Rated of Rise on-state VCC = 200V IB1 = 5.25 A RC = 0  
Collector Current  
125  
200  
A/µs  
tp = 3µs  
Tc = 100 oC  
VCE(3µs)  
VCE(5µs)  
Collector-Emitter  
Dynamic Voltage  
VCC = 200V  
RC = 5.7 Ω  
IB1 = 5.25 A  
Tc = 100 C  
3
6
3
V
o
Collector-Emitter  
Dynamic Voltage  
VCC = 200V  
RC = 5.7 Ω  
IB1 = 5.25 A  
1.8  
V
o
Tc = 100 C  
INDUCTIVE LOAD  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
ts  
tf  
tc  
Storage Time  
Fall Time  
Crossover Time  
VCC = 200 V  
IC = 35 A  
VBB = -5 V  
RB2 = 0.7 Ω  
VClamp = 250 V  
IB1 = 3.5 A  
1.4  
0.15  
0.3  
3
0.4  
0.7  
µs  
µs  
µs  
LC = 0.28 mH  
o
Tc = 100 C  
VCEW  
Maximum Collector  
Emitter Voltage  
without Snubber  
VCC = 50 V  
VBB = -5 V  
LC = 48 µH  
ICWoff = 52 A  
IB1 = 3.5 A  
RB2 = 0.7 Ω  
250  
V
o
Tc = 125 C  
* Pulsed : Pulse duration = 300 µs, duty cycle = 2%  
2/4  
BUT92  
TO-3 (version S) MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
11.00  
1.47  
TYP.  
MAX.  
13.10  
1.60  
MIN.  
0.433  
0.058  
0.059  
0.327  
0.748  
0.421  
0.649  
0.984  
0.157  
1.515  
1.187  
MAX.  
0.516  
0.063  
0.065  
0.351  
0.787  
0.437  
0.677  
1.023  
0.161  
1.547  
1.193  
A
B
C
D
E
G
N
P
R
U
V
1.50  
1.65  
8.32  
8.92  
19.00  
10.70  
16.50  
25.00  
4.00  
20.00  
11.10  
17.20  
26.00  
4.09  
38.50  
30.00  
39.30  
30.30  
A
D
P
C
G
R
P003O  
3/4  
BUT92  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is  
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are  
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products  
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
The ST logo is a trademark of STMicroelectronics  
© 2003 STMicroelectronics – Printed in Italy – All Rights Reserved  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco -  
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.  
http://www.st.com  
4/4  

相关型号：

BUT93

 Silicon NPN Power Transistor
ISC

BUTW92

 HIGH CURRENT NPN SILICON TRANSISTOR
STMICROELECTR

BUTW92_01

 HIGH CURRENT NPN SILICON TRANSISTOR
STMICROELECTR

BUV10

 Silicon NPN Power Transistor
ISC

BUV10

 25A, 125V, NPN, Si, POWER TRANSISTOR, TO-204AA
MOTOROLA

BUV10N

 Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
SEME-LAB

BUV11

 20 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 150 WATTS
MOTOROLA

BUV11

 SITCHMODE Series NPN Silicon Power Transistor
ONSEMI

BUV11

 isc Silicon NPN Power Transistor
ISC

BUV11

 Bipolar NPN Device in a Hermetically sealed TO3
SEME-LAB

BUV11/D

 SWITCHMODE Series NPN Silicon Power Transistor
ETC

BUV11N

 TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 20A I(C) | TO-204AA
ETC
©2020 ICPDF网 联系我们和版权申明