BUTW92 [STMICROELECTRONICS]
HIGH CURRENT NPN SILICON TRANSISTOR; 大电流NPN硅晶体管
| 型号： | BUTW92 |
| 厂家： | 
ST |
| 描述： | HIGH CURRENT NPN SILICON TRANSISTOR |
| 文件： | 总4页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BUTW92
HIGH CURRENT NPN SILICON TRANSISTOR
■
■
SGS-THOMSON PREFERRED SALESTYPE
NPN TRANSISTOR
APPLICATIONS:
■
MOTOR CONTROL
■
HIGH FREQUENCY AND EFFICIENCY
CONVERTERS
DESCRIPTION
3
2
High current, high speed transistor suited for
power conversion applications, high efficency
converters and motor controls.
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCES
VCEO
VEBO
IE
Parameter
Collector-Emitter Voltage (VBE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Emitter-Current
Value
Unit
500
V
V
250
7
60
V
A
IEM
Emitter Peak Current (tp < 5ms)
Base Current
70
A
IB
15
A
IBM
Base Peak Current (tp < 5ms)
18
A
o
Ptot
Tstg
Tj
Total Dissipation at Tc ≤ 25 C
180
W
oC
oC
Storage Temperature
-65 to 150
150
Max. Operating Junction Temperature
For PNP type voltage and current values are negative.
1/4
July 1997
BUTW92
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
MAX
0.7
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
VCE = 450 V
= 450 V
Min.
Typ.
Max.
Unit
ICES
Collector Cut-off
Current (VBE = -1.5V)
50
1
µA
mA
TC = 100oC
VCE
IEBO
Emitter Cut-off Current VEB = 5 V
(IC = 0)
50
µA
VCES
Collector-Emitter
Breakdown Voltage
(VEB =0)
IC = 5 mA
IE = 50 mA
IC = 200 mA
500
7
V
VEBO
Emitter-Base
Breakdown Voltage
(IC = 0)
V
V
VCEO(sus) Collector-Emitter
Sustaining Voltage
(IB=0)
250
VCE(sat)
VBE(sat)
hFE
Collector-Emitter
Saturation Voltage
IC = 60 A
IC = 60 A
IB = 15 A
IB = 15 A
0.8
1.1
1
1.5
V
V
TC = 100oC
TC = 100oC
Base-Emitter
Saturation Voltage
IC = 60 A
IC = 60 A
IB = 15 A
IB = 15 A
1.9
2
V
V
DC Current Gain
IC = 60 A
IC = 60 A
IC = 5 A
VCE = 3 V
9
6
VCE = 3 V TC = 100oC
VCE = 3 V
65
RESISTIVE LOAD
Storage Time
Fall Time
ts
tf
IC = 50 A
IB1 = -IB2 = 10 A
VCC = 250 V
1.2
250
1.4
300
µs
ns
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2/4
BUTW92
TO-247 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.7
2.2
0.4
1
TYP.
MAX.
5.3
MIN.
0.185
0.087
0.016
0.039
0.079
0.118
MAX.
A
D
0.209
0.102
0.031
0.055
0.094
0.134
2.6
E
0.8
F
1.4
F3
F4
G
2
2.4
3
3.4
10.9
0.429
H
15.3
19.7
14.2
15.9
20.3
14.8
0.602
0.776
0.559
0.626
0.779
0.582
L
L3
L4
L5
M
0.413
1.362
0.217
34.6
5.5
2
3
0.079
0.140
0.118
0.144
Dia
3.55
3.65
P025P
3/4
BUTW92
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. . .
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