BUT93 [ISC]
Silicon NPN Power Transistor; 硅NPN功率晶体管
| 型号： | BUT93 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：255K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BUT93
DESCRIPTION
·High Voltage
·High Speed Switching
·High Power Dissipation
APPLICATIONS
·Designed for switching mode power supply and electronic
ballast applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
VCES
VCEO
VEBO
IC
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
UNIT
V
600
350
V
5
V
Collector Current-Continuous
Collector Current-Peak
Base Current- Continuous
4
A
ICM
6
2
A
IB
A
Collector Power Dissipation
@TC=25℃
PC
50
W
℃
℃
Tj
Junction Temperature
150
Tstg
Storage Temperature Range
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Thermal Resistance,Junction to Case
2.5
℃/W
Rth j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BUT93
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)EBO
VCE(
PARAMETER
CONDITIONS
IC= 0.1A; IB= 0, L= 125mH
IE= 1mA; IC= 0
MIN
350
5
TYP. MAX UNIT
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
V
V
IC= 0.3A; IB= 30mA
IC= 3A; IB= 750mA
0.5
1.0
1.1
V
V
)-1
sat
VCE(
)-2
sat
IC= 1A; IB= 0.2A
V
VBE(
)
sat
VCE= 600V; VBE= 0
0.2
1.5
ICES
mA
VCE= 600V; VBE= 0; TC=125℃
hFE
DC Current Gain
IC= 1A; VCE= 2V
10
fT
Current-Gain—Bandwidth Product
IC= 05A; VCE= 10V
9
MHz
Switching Times ;Resistive Load
Storage Time
Fall Time
2.0
μs
μs
ts
IC= 1A; IB1= 0.2A; IB2= -0.4A
0.25
tf
isc Website：www.iscsemi.cn
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