STU407D [SAMHOP]
Dual E nhancement Mode Field E ffect Transistor ( N and P Channel); 双ê nhancement模式域E ffect晶体管( N和P沟道)![STU407D](http://pdffile.icpdf.com/pdf1/p00167/img/icpdf/STU40_936666_icpdf.jpg)
型号: | STU407D |
厂家: | ![]() |
描述: | Dual E nhancement Mode Field E ffect Transistor ( N and P Channel) |
文件: | 总11页 (文件大小:879K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
S TU407D
S amHop Microelectronics C orp.
J uly 27 2006 ver1.1
Dual E nhancement Mode Field E ffect Transistor ( N and P C hannel)
(N-C hannel)
(P -C hannel)
PR ODUCT S UMMAR Y
PR ODUCT S UMMAR Y
VDS S
R
DS (ON) ( m
Ω
) Max
VDS S
ID
ID
R
DS (ON) ( m
Ω
) Max
30 @ VG S = 10V
48 @ VG S = -10V
65 @ VG S = -4.5V
-40V
-12A
16A
40V
40 @ VG S = 4.5V
D1
D2
D1/D2
G 1
G 2
S 1
G 1
S 2
P -ch
S 2
S 1
N-ch
G 2
TO-252-4L
ABS OLUTE MAXIMUM R ATING S (T
P arameter
A
=25 C unless otherwise noted)
Unit
V
S ymbol
N-C hannel P -C hannel
Drain-S ource Voltage
V
V
DS
G S
40
20
-40
20
V
G ate-S ource Voltage
25 C
Drain C urrent-C ontinuous @ Tc
70 C
-12
-10
16
A
A
I
D
13.8
-P ulsed a
I
DM
-50
-6
50
8
A
A
Drain-S ource Diode Forward C urrent
I
S
Tc= 25 C
Maximum P ower Dissipation
Tc= 70 C
11
P
D
W
C
7.7
Operating J unction and S torage
Temperature R ange
-55 to 175
TJ , TS TG
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, J unction-to-C ase
C/W
C/W
R
J C
J A
13.6
120
Thermal R esistance, J unction-to-Ambient
R
1
S TU407D
N-Channel E LE CTR ICAL CHAR ACTE R IS TICS (T
A
= 25 C unles s otherwis e noted)
C
Typ Max
P arameter
C ondition
Min
40
Unit
S ymbol
5
OFF C HAR AC TE R IS TIC S
V
G S 0V, I
=
D 250uA
=
Drain-S ource Breakdown Voltage
V
BVDS S
uA
uA
I
I
DS S
G S S
V
V
DS 32V, VG S 0V
Zero G ate Voltage Drain C urrent
G ate-Body Leakage
1
=
=
G S
20V, VDS 0V
=
10
=
a
ON C HAR AC TE R IS TIC S
V
G S (th)
1.8
3
V
G ate Threshold Voltage
V
V
V
V
V
DS =VG S , I
= 250uA
D
1
m ohm
m ohm
22
30
30
40
=
=
G S 10V, I
G S =4.5V, I
DS = 5V, VG S = 4.5V
D
8A
Drain-S ource On-S tate R esistance
R
DS (ON)
D
= 6A
20
On-S tate Drain C urrent
I
D(ON)
A
S
gFS
15
Forward Transconductance
=
=
DS 10V, I 8A
D
b
DYNAMIC C HAR AC TE R IS TIC S
Input C apacitance
735
P
P
P
F
F
F
C
IS S
V
DS =20V, VG S = 0V
Output C apacitance
C
C
OS S
R S S
120
70
f =1.0MH
Z
R everse Transfer C apacitance
G ate resistance
R g
V
G S =0V, VDS = 0V, f=1.0MH
Z
0.36
ohm
b
S WITC HING C HAR AC TE R IS TIC S
Turn-On Delay Time
t
D(ON)
ns
ns
ns
13
15
26
10
15
V
DD = 20V
= 3 A
I
D
tr
R ise Time
V
R
G S = 10V
G E N = 3 ohm
t
D(OFF)
Turn-Off Delay Time
Fall Time
tf
ns
Total G ate C harge
V
V
DS =20V, I
D
D
=8A,VG S =10V
=8A,VG S =4.5V
nC
nC
Q
g
7.2
2.0
3.8
DS =20V, I
nC
nC
Q
Q
gs
G ate-S ource C harge
G ate-Drain C harge
V
V
DS =20V, I
G S =10V
D
= 8 A
gd
2
S TU407D
P-Channel E LE CTR ICAL CHAR ACTE R IS TICS (T
A
= 25 C unles s otherwis e noted)
C
Typ Max
P arameter
C ondition
Min
-40
Unit
S ymbol
5
OFF C HAR AC TE R IS TIC S
V
G S 0V, I
=
D -250uA
=
Drain-S ource Breakdown Voltage
V
BVDS S
uA
uA
I
I
DS S
G S S
V
V
DS -32V, VG S 0V
Zero G ate Voltage Drain C urrent
G ate-Body Leakage
-1
=
=
G S
20V, VDS 0V
=
10
=
a
ON C HAR AC TE R IS TIC S
-1.6
40
-3
48
65
V
G S (th)
V
G ate Threshold Voltage
V
V
V
V
V
DS =VG S , I
D
= -250uA
-1
m ohm
m ohm
=
=
G S -10V, I
D
-6A
-4A
Drain-S ource On-S tate R esistance
R
DS (ON)
50
G S =-4.5V, I
D
=
-20
DS = -5V, VG S = -10V
On-S tate Drain C urrent
I
D(ON)
A
S
gFS
9
Forward Transconductance
=
=
-10V, I -6A
DS
D
b
DYNAMIC C HAR AC TE R IS TIC S
Input C apacitance
920
P
P
P
F
F
F
C
IS S
V
DS =-20V, VG S = 0V
Output C apacitance
C
C
OS S
R S S
135
75
f =1.0MH
Z
R everse Transfer C apacitance
G ate resistance
R g
V
G S =0V, VDS = 0V, f=1.0MH
Z
3.5
ohm
b
S WITC HING C HAR AC TE R IS TIC S
Turn-On Delay Time
t
D(ON)
ns
ns
ns
12
13
60
25
15
V
DD = -20V
= -3A
I
D
tr
R ise Time
V
R
G S = -10V
G E N = 3 ohm
t
D(OFF)
Turn-Off Delay Time
Fall Time
tf
ns
Total G ate C harge
V
V
DS =-20V, I
DS =-20V, I
D
=-6A,VGS =-10V
=-6A,VGS =-4.5V
nC
nC
Q
g
D
7.2
2
nC
nC
Q
Q
gs
G ate-S ource C harge
G ate-Drain C harge
V
V
DS =-20V, I
G S =-10V
D
= -6 A
gd
4.0
3
S TU407D
ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)
A
C
Typ Max
Parameter
Condition
Min
Unit
V
Symbol
b
DRAIN-SOURCE DIODE CHARACTERISTICS
V
V
GS = 0V, Is =8A
GS = 0V, Is =-6A
N-Ch
P-Ch
0.94
-0.87
1.2
Diode Forward Voltage
V
SD
-1.2
Notes
<
<
a.Pulse Test:Pulse Width 300μ s, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
N-Channel
30
15
12
VG S =4.5V
25
VG S =3.5V
20
V
G S =10V
9
V
G S =8V
Tj=125 C
15
6
3
10
5
25 C
VG S =3V
-55 C
0
0
0
0.8
1.6
2.4
3.2
4.0
4.8
0
0.5
1
2
3
1.5
2.5
VDS , Drain-to-S ource Voltage (V)
VG S , G ate-to-S ource Voltage (V)
Figure 1. Output C haracteristics
Figure 2. Transfer C haracteristics
60
2.0
1.8
1.6
1.4
1.2
1.0
0.0
50
40
V
G S =10V
=8A
VG S =4.5V
VG S =10V
I
D
30
20
V
G S =4.5V
=6A
10
0
I
D
150
1
0
125
6
12
18
24
30
25
50
75
100
Tj( C )
ID, Drain C urrent (A)
T j, J unction T emperature ( C )
Figure 3. On-R esistance vs. Drain C urrent
and G ate Voltage
Figure 4. On-R esistance Variation with
Drain C urrent and Temperature
4
S TU407D
1.40
1.30
1.2
1.1
ID=250uA
V
DS =V G S
I
D=250uA
1.0
0.9
0.8
0.7
1.20
1.10
1.00
0.90
0.80
0.6
0.5
6
0
-50
25 50
-25
125 150
75 100
-50 -25
0
25 50 75 100 125 150
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 6. B reakdown V oltage V ariation
with T emperature
F igure 5. G ate T hreshold V ariation
with T emperature
60
20.0
10.0
ID=8A
50
40
125 C
75 C
30
20
25 C
25 C
75 C
125 C
10
0
1.0
0
2
4
6
8
10
0.4
0.6
0.8
1.0
1.2
1.4
VG S , G ate- S ource Voltage (V)
V
S D, B ody Diode F orward V oltage (V )
Figure 7. On-R esistance vs.
G ate-S ource Voltage
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
200
Tj(max)=175 C
TA=25 C
160
120
80
40
0
0.001
0.1
0.0001
0.01
1
F igure 9. S ingle P ulse P ower R ating
J unction-to-C ase
5
S TU407D
1200
1000
10
8
V
DS =20V
=8A
I
D
C iss
800
6
600
400
4
C oss
2
0
6
200
C rss
0
0
5
10
15
20
25
30
6
0
2
4
8
10 12
14 16
VDS , Drain-to S ource Voltage (V)
Qg, T otal G ate C harge (nC )
F igure 11. G ate C harge
Figure 10. C apacitance
100
300
80
Tr
100
60
TD(off)
TD(on)
Tf
t
i
m
1
i
m
L
s
)
N
O
1
(
0
R DS
10
10
m
1
s
s
0
0
m
s
1
D
C
V G S =10V
S ingle P ulse
T c=25 C
V DS =20V ,ID=1A
V G S =10V
1
1
0.5
600
1
6
10
60 100 300
0.1
1
10
30 60
R g, G ate R esistance (
Ω
)
V DS , Drain-S ource V oltage (V )
F igure 13. Maximum S afe
Operating Area
F igure 12.switching characteristics
2
1
D=0.5
0.2
0.1
DM
P
0.1
0.05
1
t
2
t
0.02
0.01
1. R θ J A (t)=r (t) * R θ J A
2. R θ J A=S ee Datasheet
3. TJ M-TA = P DM* R θ J A (t)
4. Duty C ycle, D=t1/t2
S ING LE P ULS E
10-4
0.01
10-5
10-3
10-2
10-1
1
10
S quare Wave P ulse Duration (sec)
Figure 14. Normalized Thermal Transient Impedance C urve
6
S T U407D
P-C hannel
20
15
12
9
V
G S =-4.5V
V
G S =-10V
16
12
VG S =-3.5V
Tj=125 C
-55 C
6
3
0
8
4
0
VG S =-8V
25 C
VG S =-3V
0
0.8
1.6
2.4
3.2
4.0
4.8
0
0.5
1
2
3
1.5
2.5
-VDS , Drain-to-S ource Voltage (V)
-VG S , G ate-to-S ource Voltage (V)
Figure 1. Output C haracteristics
Figure 2. Transfer C haracteristics
120
1.5
1.4
1.3
1.2
1.1
1.0
0.0
100
80
V
G S =-10V
=-6A
I
D
VG S =-4.5V
VG S =-10V
60
40
V
G S =-4.5V
=-4A
I
D
20
0
1
0
25
4
8
12
16
20
50
75
100
125
150
Tj( C )
-ID, Drain C urrent (A)
T j, J unction T emperature ( C )
Figure 3. On-R esistance vs. Drain C urrent
and G ate Voltage
Figure 4. On-R esistance Variation with
Drain C urrent and Temperature
7
S TU407D
1.15
1.10
1.3
ID=-250uA
V
DS =V G S
=-250uA
1.2
I
D
1.1
1.0
0.9
0.8
1.05
1.00
0.95
0.90
0.85
0.7
0.6
6
0
-50
25 50
-25
125 150
75 100
-50 -25
0
25 50 75 100 125 150
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 6. B reakdown V oltage V ariation
with T emperature
F igure 5. G ate T hreshold V ariation
with T emperature
120
20.0
ID=-6A
100
80
25 C
125 C
10.0
75 C
60
40
25 C
125 C
75 C
20
0
1.0
0
2
4
6
8
10
0.4
0.6
0.8
1.0
1.2
1.4
-VG S , G ate- S ource Voltage (V)
-V S D, B ody Diode F orward V oltage (V )
Figure 7. On-R esistance vs.
G ate-S ource Voltage
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
200
Tj(max)=175 C
TA=25 C
160
120
80
40
0
0.001
0.1
0.0001
0.01
1
F igure 9. S ingle P ulse P ower R ating
J unction-to-C ase
8
S TU407D
1200
10
8
V
DS =-20V
=-6A
C iss
1000
I
D
800
600
400
6
4
C oss
2
0
6
200
C rss
0
0
5
10
15
20
25
30
6
0
2
4
8
10 12
14 16
-VDS , Drain-to S ource Voltage (V)
Qg, T otal G ate C harge (nC )
Figure 10. C apacitance
F igure 11. G ate C harge
300
70
Tr
50
TD(off)
TD(on)
t
i
100
60
m
i
L
)
Tf
N
1
O
0
m
(
S
s
D
R
10
10
1
s
0
0
m
1
s
D
C
V
G S =-10V
V DS =20V ,ID=1A
V G S =10V
1
1
S ingle P ulse
T c=25 C
0.03
600
60 100 300
1
6
10
0.1
1
10 30
60
R g, G ate R esistance (
Ω)
-V DS , Drain-S ource V oltage (V )
F igure 13. Maximum S afe
Operating Area
F igure 12.switching characteristics
2
1
D=0.5
0.2
0.1
DM
P
0.1
0.05
1
t
2
t
0.02
1. R θ J A (t)=r (t) * R θ J A
2. R θ J A=S ee Datasheet
3. TJ M-TA = P DM* R θ J A (t)
4. Duty C ycle, D=t1/t2
0.01
S ING LE P ULS E
0.01
10-5
10-4
10-3
10-2
10-1
1
10
S quare Wave P ulse Duration (sec)
Figure 14. Normalized Thermal Transient Impedance C urve
9
S TU407D
P AC K AG E OUTL INE DIME NS IONS
TO-252-4L
A
B
H
K
C
M
J
L
D
S
G
P
ers
Millimet
REF .
MAX
6.80
5.50
10.20
3.00
MIN
.40
.2
A
B
C
D
P
6
5
6
.80
2
.20
1.27 REF.
0.80
0.60
2.40
0.60
0.15
1.50
5.80
0
0
2
0
.50
.40
.20
.45
0
S
G
H
J
K
L
M
0.
90
5
.40
10
S TU407D
TO-252-4L Tape and Reel Data
TO-252-4L Carrier Tape
6
4
TO-252-4L Reel
UNIT:㎜
11
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