STU407DH [SAMHOP]
Dual E nhancement Mode F ield E ffect Transistor ( N and P Channel); 双ê nhancement模式F屈服Ë ffect晶体管（ N和P沟道）
| 型号： | STU407DH |
| 厂家： | 
SAMHOP MICROELECTRONICS CORP. |
| 描述： | Dual E nhancement Mode F ield E ffect Transistor ( N and P Channel) |
| 文件： | 总11页 (文件大小：180K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S TU407DH
Apr 20 2007
S amHop Microelectronics Corp.
Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)
(N-Channel)
(P-Channel)
PR ODUCT S UMMAR Y
PR ODUCT S UMMAR Y
VDS S
R DS (ON) ( m
Ω
) Max
VDS S
ID
ID
R DS (ON) ( m Ω ) Max
29 @ VGS = 10V
47 @ VGS = -10V
64 @ VGS = -4.5V
-40V
-12A
16A
40V
39 @ VGS = 4.5V
D1
D2
D1/D2
G1
G2
S 1
G1
S 2
P-ch
S 2
S 1
N-ch
G2
TO-252-4L
ABS OLUTE MAXIMUM R ATINGS (T
Parameter
A
=25 C unless otherwise noted)
Unit
V
S ymbol
VDS
N-Channel P-Channel
Drain-S ource Voltage
40
20
-40
20
VGS
V
Gate-S ource Voltage
25 C
-12
-10
16
A
A
ID
Drain Current-Continuous @ Tc
70 C
13.8
-Pulsed a
IDM
IS
-50
-6
50
8
A
A
Drain-S ource Diode Forward Current
Tc= 25 C
Maximum Power Dissipation
Tc= 70 C
11
PD
W
C
7.7
Operating Junction and S torage
Temperature R ange
-55 to 175
TJ, TS TG
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Case
C/W
C/W
R
R
JC
JA
13.6
120
Thermal R esistance, Junction-to-Ambient
1
S TU407DH
N-Channel ELECTR ICAL CHAR ACTER ISTICS (T
A
= 25 C unless otherwise noted)
Typ C Max
Parameter
Condition
Min
Unit
S ymbol
5
OFF CHAR ACTE R IS TICS
VGS 0V, ID 250uA
Drain-S ource Breakdown Voltage
=
40
V
BVDS S
IDS S
=
uA
uA
VDS 32V, VGS 0V
Zero Gate Voltage Drain Current
Gate-Body Leakage
1
=
=
VGS
20V, VDS 0V
=
IGS S
10
=
a
ON CHAR ACTE R IS TICS
VGS (th)
1.8
21
29
V
Gate Threshold Voltage
VDS =VGS , ID = 250uA
3
1
m ohm
m ohm
29
39
=
=
VGS 10V, ID 8A
VGS =4.5V, ID= 6A
VDS = 5V, VGS = 4.5V
Drain-S ource On-S tate R esistance
R DS (ON)
20
On-S tate Drain Current
ID(ON)
gFS
A
S
15
Forward Transconductance
=
=
VDS 10V, ID 8A
DYNAMIC CHAR ACTE R IS TICS b
Input Capacitance
735
PF
PF
CIS S
VDS =20V, VGS = 0V
f =1.0MHZ
Output Capacitance
COS S
120
70
R everse Transfer Capacitance
Gate resistance
CR S S
PF
R g
VGS =0V, VDS = 0V, f=1.0MHZ
0.36
ohm
b
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time
tD(ON)
ns
ns
ns
13
15
26
10
15
VDD = 20V
ID = 3 A
tr
R ise Time
VGS = 10V
R GE N = 3 ohm
tD(OFF)
Turn-Off Delay Time
Fall Time
tf
ns
Total Gate Charge
VDS =20V, ID =8A,VGS =10V
VDS =20V, ID =8A,VGS =4.5V
nC
nC
Qg
7.2
2.0
3.8
nC
nC
Qgs
Qgd
Gate-S ource Charge
Gate-Drain Charge
VDS =20V, ID = 8 A
VGS =10V
2
S TU407DH
P-Channel ELECTR ICAL CHAR ACTER ISTICS (T
A
= 25 C unless otherwise noted)
Typ C Max
Parameter
Condition
Min
Unit
S ymbol
5
OFF CHAR ACTE R IS TICS
VGS 0V, ID -250uA
Drain-S ource Breakdown Voltage
=
-40
V
BVDS S
IDS S
=
uA
uA
VDS -32V, VGS 0V
Zero Gate Voltage Drain Current
Gate-Body Leakage
-1
=
=
VGS
20V, VDS 0V
=
IGS S
10
=
a
ON CHAR ACTE R IS TICS
-1.6
39
-3
47
64
VGS (th)
V
Gate Threshold Voltage
VDS =VGS , ID = -250uA
-1
m ohm
m ohm
=
=
VGS -10V, ID -6A
Drain-S ource On-S tate R esistance
R DS (ON)
49
VGS =-4.5V, ID -4A
=
-20
VDS = -5V, VGS = -10V
On-S tate Drain Current
ID(ON)
gFS
A
S
9
Forward Transconductance
=
=
-10V, ID -6A
VDS
DYNAMIC CHAR ACTE R IS TICS b
Input Capacitance
920
PF
PF
CIS S
VDS =-20V, VGS = 0V
f =1.0MHZ
Output Capacitance
COS S
135
75
R everse Transfer Capacitance
Gate resistance
CR S S
PF
R g
VGS =0V, VDS = 0V, f=1.0MHZ
3.5
ohm
b
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time
tD(ON)
ns
ns
ns
12
13
60
25
15
VDD = -20V
ID = -3A
tr
R ise Time
VGS = -10V
R GE N = 3 ohm
tD(OFF)
Turn-Off Delay Time
Fall Time
tf
ns
Total Gate Charge
VDS =-20V, ID =-6A,VGS =-10V
VDS =-20V, ID =-6A,VGS =-4.5V
nC
nC
Qg
7.2
2
nC
nC
Qgs
Qgd
Gate-S ource Charge
Gate-Drain Charge
VDS =-20V, ID = -6 A
VGS =-10V
4.0
3
S TU407DH
ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
Typ C Max
Parameter
Condition
Min
Unit
V
Symbol
DRAIN-SOURCE DIODE CHARACTERISTICS b
V
V
GS = 0V, Is =8A
GS = 0V, Is =-6A
N-Ch
P-Ch
0.94
1.2
Diode Forward Voltage
VSD
-0.87
-1.2
Notes
І
І
a.Pulse Test:Pulse Width 300Ӵs, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
N-Channel
30
15
12
VGS =4.5V
25
VGS =3.5V
20
V
GS =10V
9
V
GS =8V
Tj=125 C
15
6
3
10
5
25 C
VGS =3V
-55 C
0
0
0
0.8
1.6
2.4
3.2
4.0
4.8
0
0.5
1
2
3
1.5
2.5
VDS , Drain-to-S ource Voltage (V)
VGS , Gate-to-S ource Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
60
2.0
1.8
1.6
1.4
1.2
1.0
0.0
50
40
VGS =10V
ID=8A
VGS =4.5V
30
20
VGS =10V
VGS =4.5V
ID=6A
10
0
150
1
0
125
6
12
18
24
30
25
50
75
100
Tj( C)
ID, Drain Current (A)
Tj, J unction Temperature ( C )
Figure 3. On-R esistance vs. Drain Current
and Gate Voltage
Figure 4. On-R esistance Variation with
Drain Current and Temperature
4
STU407DH
1.40
1.30
1.2
ID=250uA
V
DS=VGS
1.1
ID=250uA
1.0
0.9
0.8
0.7
1.20
1.10
1.00
0.90
0.80
0.6
0.5
6
0
-50
25 50
-25
125 150
75 100
-50 -25
0
25 50
75 100 125 150
Tj, Junction Temperature ( C )
Tj, Junction Temperature ( C )
Figure 6. Breakdown Voltage Variation
with Temperature
Figure 5. Gate Threshold Variation
with Temperature
60
20.0
10.0
ID=8A
50
40
125 C
75 C
30
20
25 C
25 C
75 C
125 C
10
0
1.0
0
2
4
6
8
10
0.4
0.6
0.8
1.0
1.2
1.4
VGS, Gate- Source Voltage (V)
VSD, Body Diode Forward Voltage (V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
Figure 8. Body Diode Forward Voltage
Variation with Source Current
200
160
120
80
Tj(max)=175 C
TA=25 C
40
0
0.001
0.1
0.0001
0.01
1
Figure 9. Single Pulse Power Rating
Junction-to-Case
5
S TU407DH
1200
1000
10
8
VDS =20V
ID=8A
Ciss
800
6
600
400
4
Coss
2
0
6
200
Crss
0
0
5
10
15
20
25
30
6
0
2
4
8
10 12
14 16
VDS , Drain-to S ource Voltage (V)
Qg, Total G ate C harge (nC )
Figure 11. G ate C harge
Figure 10. Capacitance
100
300
80
Tr
100
60
TD(off)
TD(on)
Tf
t
i
m
1
i
m
L
s
)
N
O
1
(
0
R DS
10
10
m
1
s
s
0
0
m
s
1
D
C
VG S =10V
S ingle P ulse
Tc=25 C
VDS =20V,ID=1A
VG S =10V
1
1
0.5
0.1
600
1
6
10
60 100 300
1
10
30 60
R g, G ate R esistance (
Ω
)
VDS , Drain-S ource Voltage (V)
Figure 13. Maximum S afe
Operating Area
Figure 12.switching characteristics
2
1
D=0.5
0.2
0.1
DM
P
0.1
0.05
1
t
2
t
0.02
0.01
1. R ӰJA (t)=r (t) * R ӰJA
2. R ӰJA=S ee Datasheet
3. TJM-TA = PDM* R ӰJA (t)
4. Duty Cycle, D=t1/t2
S INGLE PULS E
10-4
0.01
10-5
10-3
10-2
10-1
1
10
S quare Wave Pulse Duration (sec)
Figure 14. Normalized Thermal Transient Impedance Curve
6
S TU407DH
P-C hannel
20
15
12
9
V
GS =-4.5V
V
GS =-10V
16
12
VGS =-3.5V
Tj=125 C
-55 C
6
3
0
8
4
0
VGS =-8V
25 C
VGS =-3V
0
0.8
1.6
2.4
3.2
4.0
4.8
0
0.5
1
2
3
1.5
2.5
-VDS , Drain-to-S ource Voltage (V)
-VGS , Gate-to-S ource Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
120
1.5
1.4
1.3
1.2
1.1
1.0
0.0
100
80
VGS =-10V
ID=-6A
VGS =-4.5V
VGS =-10V
60
40
VGS =-4.5V
ID=-4A
20
0
1
0
25
4
8
12
16
20
50
75
100
125
150
Tj( C)
-ID, Drain Current (A)
Tj, J unction Temperature ( C )
Figure 3. On-R esistance vs. Drain Current
and Gate Voltage
Figure 4. On-R esistance Variation with
Drain Current and Temperature
7
S TU407DH
1.15
1.10
1.3
ID=-250uA
VDS =VG S
1.2
ID=-250uA
1.1
1.0
0.9
0.8
1.05
1.00
0.95
0.90
0.85
0.7
0.6
6
0
-50
25 50
-25
125 150
75 100
-50 -25
0
25 50 75 100 125 150
Tj, Junction Temperature ( C )
Tj, Junction Temperature ( C )
Figure 6. Breakdown Voltage Variation
with Temperature
Figure 5. G ate Threshold Variation
with Temperature
120
20.0
ID=-6A
100
25 C
125 C
10.0
80
75 C
60
25 C
40
125 C
75 C
20
0
1.0
0
2
4
6
8
10
0.4
0.6
0.8
1.0
1.2
1.4
-VGS , Gate- S ource Voltage (V)
-VS D, Body Diode Forward Voltage (V)
Figure 7. On-R esistance vs.
Gate-S ource Voltage
Figure 8. Body Diode Forward Voltage
Variation with S ource C urrent
200
Tj(max)=175 C
160
120
80
TA=25 C
40
0
0.001
0.1
0.0001
0.01
1
Figure 9. S ingle P ulse P ower R ating
Junction-to-C ase
8
S TU407DH
1200
10
8
VDS =-20V
ID=-6A
Ciss
1000
800
600
400
6
4
Coss
2
0
6
200
Crss
0
0
5
10
15
20
25
30
6
0
2
4
8
10 12
14 16
-VDS , Drain-to S ource Voltage (V)
Qg, Total G ate C harge (nC )
Figure 10. Capacitance
Figure 11. G ate C harge
300
70
Tr
50
10
TD(off)
TD(on)
t
i
100
60
m
i
L
)
Tf
N
1
O
0
m
(
S
s
D
R
10
1
s
0
0
m
1
s
D
C
V
G S =-10V
VDS =20V,ID=1A
VG S =10V
1
1
S ingle P ulse
Tc=25 C
0.03
600
60 100 300
1
6
10
0.1
1
10 30
60
R g, G ate R esistance (
Ω)
-VDS , Drain-S ource Voltage (V)
Figure 13. Maximum S afe
Operating Area
Figure 12.switching characteristics
2
1
D=0.5
0.2
0.1
DM
P
0.1
0.05
1
t
2
t
0.02
1. R ӰJA (t)=r (t) * R ӰJA
2. R ӰJA=S ee Datasheet
3. TJM-TA = PDM* R ӰJA (t)
4. Duty Cycle, D=t1/t2
0.01
S INGLE PULS E
0.01
10-5
10-4
10-3
10-2
10-1
1
10
S quare Wave Pulse Duration (sec)
Figure 14. Normalized Thermal Transient Impedance Curve
9
S TU407DH
PACK AGE OUTLINE DIME NS IONS
TO-252-4L
A
B
H
K
C
M
J
L
D
S
G
P
Millimeters
REF .
MAX
MIN
6.80
5.50
A
B
C
D
P
6
.40
5
.2
10.20
3.00
6
.80
2.2
0
1.27 REF.
0.80
0.60
2.40
0.60
0.15
1.50
5.80
S
0.
50
G
H
J
0.4
0
2
.20
0.4
0
5
K
L
M
0.
90
5.4
0
10
S TU407DH
TO-252-4L Tape and Reel Data
TO-252-4L Carrier Tape
ˉ
ˇ
TO-252-4L Reel
UNIT:р
11
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