MMBTA93L [ONSEMI]
High Voltage Transistors PNP Silicon; 高压晶体管PNP硅
| 型号： | MMBTA93L |
| 厂家： | 
ONSEMI |
| 描述： | High Voltage Transistors PNP Silicon |
| 文件： | 总4页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBTA92L, SMMBTA92L,
MMBTA93L
High Voltage Transistors
PNP Silicon
http://onsemi.com
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
COLLECTOR
3
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
1
Compliant
BASE
MAXIMUM RATINGS
2
Rating
Symbol
92
93
Unit
Vdc
EMITTER
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
V
CEO
V
CBO
V
EBO
−300
−300
−5.0
−200
−200
−5.0
MARKING
DIAGRAM
Vdc
3
Vdc
1
Collector Current — Continuous
DEVICE MARKING
I
C
−500
mAdc
2
2x MG
G
SOT−23 (TO−236AF)
CASE 318
MMBTA92L, SMMBTA92L = 2D; MMBTA93LT1 = 2E
STYLE 6
THERMAL CHARACTERISTICS
2x = Specific Device Code
Characteristic
Symbol
Max
Unit
M
G
= Date Code*
= Pb−Free Package
Total Device Dissipation FR−5 Board
P
D
225
mW
(Note 1) T = 25°C
A
(*Note: Microdot may be in either location)
Derate above 25°C
1.8
556
300
mW/°C
°C/W
mW
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Thermal Resistance, Junction to Ambient
R
q
JA
Total Device Dissipation (Note 2)
P
D
(2)
Alumina Substrate, T = 25°C
A
Derate above 25°C
2.4
mW/°C
°C/W
°C
ORDERING INFORMATION
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R
417
q
JA
†
Device
Package
Shipping
T , T
−55 to
+150
J
stg
MMBTA92LT1G
SOT−23 3000 / Tape & Reel
(Pb−Free)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
SMMBTA92LT1G SOT−23 3000 / Tape & Reel
(Pb−Free)
MMBTA92LT3G
SOT−23 10000 / Tape & Reel
(Pb−Free)
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
SMMBTA92LT3G SOT−23 10000 / Tape & Reel
(Pb−Free)
MMBTA93LT1G
SOT−23 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
January, 2013 − Rev. 10
MMBTA92LT1/D
MMBTA92L, SMMBTA92L, MMBTA93L
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 3)
(I = −1.0 mAdc, I = 0)
V
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
MMBTA92, SMMBTA92
MMBTA93
−300
−200
−
−
C
B
Collector−Base Breakdown Voltage
(I = −100 mAdc, I = 0)
V
V
Vdc
MMBTA92, SMMBTA92
MMBTA93
−300
−200
−
−
C
E
Emitter−Base Breakdown Voltage
(I = −100 mAdc, I = 0)
−5.0
−
Vdc
E
C
Collector Cutoff Current
(V = −200 Vdc, I = 0)
I
mAdc
CBO
MMBTA92, SMMBTA92
MMBTA93
−
−
−0.25
−0.25
CB
E
(V = −160 Vdc, I = 0)
CB
E
Emitter Cutoff Current
(V = −3.0 Vdc, I = 0)
I
−
−0.1
mAdc
EBO
EB
C
ON CHARACTERISTICS (Note 3)
DC Current Gain
h
FE
−
(I = −1.0 mAdc, V = −10 Vdc)
Both Types
Both Types
25
40
−
−
C
CE
(I = −10 mAdc, V = −10 Vdc)
C
CE
(I = −30 mAdc, V = −10 Vdc)
MMBTA92, SMMBTA92
MMBTA93
25
25
−
−
C
CE
Collector−Emitter Saturation Voltage
(I = −20 mAdc, I = −2.0 mAdc)
V
Vdc
Vdc
CE(sat)
MMBTA92, SMMBTA92
MMBTA93
−
−
−0.5
−0.5
C
B
Base−Emitter Saturation Voltage
(I = −20 mAdc, I = −2.0 mAdc)
V
−
−0.9
BE(sat)
C
B
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product
f
50
−
MHz
pF
T
(I = −10 mAdc, V = −20 Vdc, f = 100 MHz)
C
CE
Collector−Base Capacitance
(V = −20 Vdc, I = 0, f = 1.0 MHz)
C
cb
MMBTA92, SMMBTA92
MMBTA93
−
−
6.0
8.0
CB
E
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
300
V
CE
= 10 Vdc
T = +125°C
J
250
200
25°C
150
-55°C
100
50
0
0.1
1.0
10
100
I , COLLECTOR CURRENT (mA)
C
Figure 1. DC Current Gain
http://onsemi.com
2
MMBTA92L, SMMBTA92L, MMBTA93L
100
10
150
130
C
@ 1MHz
ib
110
90
C
@ 1MHz
cb
70
50
30
10
1.0
0.1
T = 25°C
J
V
= 20 Vdc
F = 20 MHz
CE
0.1
1.0
10
100
1000
11
13
15
17
19
21
1
3
5
7
9
V , REVERSE VOLTAGE (VOLTS)
R
I , COLLECTOR CURRENT (mA)
C
Figure 2. Capacitance
Figure 3. Current−Gain − Bandwidth
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
V
V
@ 25°C, I /I = 10
C B
CE(sat)
@ 125°C, I /I = 10
CE(sat)
CE(sat)
BE(sat)
C B
V
V
V
V
V
@ -55°C, I /I = 10
C B
@ 25°C, I /I = 10
C
B
@ 125°C, I /I = 10
BE(sat)
BE(sat)
BE(on)
C B
@ -55°C, I /I = 10
C
B
@ 25°C, V = 10 V
CE
V
V
@ 125°C, V = 10 V
BE(on)
CE
@ -55°C, V = 10 V
CE
BE(on)
0.1
1.0
10
100
I , COLLECTOR CURRENT (mA)
C
Figure 4. “ON” Voltages
1000
1.0 s
10 ms
100 ms
100 ms
10 ms
1.0 ms
100
10
1
Single Pulse Test T = 25°C
A
1
10
100
1000
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. Safe Operating Area
http://onsemi.com
3
MMBTA92L, SMMBTA92L, MMBTA93L
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
SEE VIEW C
3
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
H
E
E
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
MAX
MIN
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
c
1
2
b
0.25
e
q
A
H
q
2.10
0°
2.40
−−−
2.64
10°
0.083
0°
0.094
−−−
0.104
10°
E
L
A1
STYLE 6:
L1
VIEW C
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
mm
inches
ǒ
Ǔ
SCALE 10:1
0.8
0.031
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MMBTA29LT1/D
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