MMBTA94 [WEITRON]
High-Voltage PNP Transistor Surface Mount; 高电压PNP晶体管表面贴装
| 型号： | MMBTA94 |
| 厂家： | 
WEITRON TECHNOLOGY |
| 描述： | High-Voltage PNP Transistor Surface Mount |
| 文件： | 总3页 (文件大小：192K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBTA94
COLLECTOR
3
High-Voltage PNP Transistor
Surface Mount
SOT-23
3
1
BASE
1
2
2
EMITTER
Maximum Ratings
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Symbol
Value
Unit
Vdc
Vdc
V
-400
-450
-6.0
CEO
V
CBO
Emitter-Base VOltage
V
Vdc
EBO
Collector Current-Continuous
I
C
mAdc
-300
Thermal Characteristics
Characteristics
Symbol
Max
Unit
(1)
Total Device Dissipation FR-5 Board
TA=25 C
Derate above 25 C
mW
225
1.8
P
D
mW/ C
C/W
R
Thermal Resistance, Junction to Ambient
JA
556
350
mW
Total Device Dissipation
(2)
Alumina Substrate, TA=25 C
P
D
Derate above 25 C
2.8
mW/ C
C/W
R
Thermal Resistance, Junction to Ambient
Junction and Storage,Temperature
357
JA
T
J,Tstg
-55 to +150
C
Device Marking
MMBTA94=4D
(TA=25 C Unless Otherwise noted)
Electrical Characteristics
Characteristics
Symbol
Unit
Min
Max
Off Characteristics
(3)
-
-
-
Collector-Emitter Breakdown Voltage (I =-1.0mAdc. IB=0)
C
V(BR)CEO
V(BR)CBO
V(BR)EBO
-400
-450
Vdc
Collector-Base Breakdown Voltage (I =-100 uAdc, I =0)
Vdc
Vdc
C
E
Emitter-Base Breakdown Voltage (I =-10 uAdc, I =0)
-6.0
E
C
-
-
I
100
100
Collect Cutoff Current (V = -400Vdc, I =0)
nAdc
nAdc
CBO
CB
E
Emitte Cutoff Current (V =-4V, I =0)
EB
C
I
EBO
1.FR-5=1.0 x 0.75 x 0.062 in.
2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina.
3.Pulse Test:Pulse Width 300 µS, Duty Cycle 2.0%.
WEITRON
http://www.weitron.com.tw
1/4
23-Sep-05
MMBTA94
Electrical Characteristics(T =25˚C unless otherwise noted) (Countinued)
A
Symbol
Unit
Characteristics
Max
Min
On Characteristics
DC Current Gain
(I = -1.0 mAdc, V =-10Vdc)
H
C
CE
40
50
45
20
-
FE(1)
H
FE(2)
-
(I = -10 mAdc, V = -10Vdc)
CE
2.00
C
H
FE(3)
-
.
(I = -50 mAdc, V = -10Vdc)
CE
C
H
FE(4)
(I = -100 mAdc, V = -10Vdc)
C CE
(3)
Collector-Emitter Saturation Voltage
(I = -1.0 mAdc, I = -0.1 mAdc)
-
C
B
0.40
0.50
0.75
V
Vdc
CE(sat)
(I = -10 mAdc, I = -1.0 mAdc)
C
B
(I = -50 mAdc, I = -5.0 mAdc)
C
B
(3)
Base-Emitter Saturation Voltage
(I = -10 mAdc, I = -1.0 mAdc)
V
-
BE(sat)
Vdc
0.75
-
C
B
Current-Gain-Bandwidth Product
f
T
MHz
20
(I = 10 mAdc, V = -10 Vdc, f=10MHz)
C
CE
WEITRON
http://www.weitron.com.tw
2/3
23-Sep-05
MMBTA94
SOT-23 Package Outline Dimension
SOT-23
A
Dim
A
B
C
D
Min
0.35
1.19
2.10
0.85
0.46
1.70
2.70
0.01
0.89
0.30
0.076
Max
0.51
1.40
3.00
1.05
1.00
2.10
3.10
0.13
1.10
0.61
0.25
B
C
TOP VIEW
E
D
G
G
H
J
K
L
E
H
K
L
M
J
M
WEITRON
http://www.weitron.com.tw
3/3
23-Sep-05
相关型号：
©2020 ICPDF网 联系我们和版权申明