MMBTA94 [SECOS]
Epitaxial Transistor; 外延晶体管
| 型号： | MMBTA94 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | Epitaxial Transistor |
| 文件： | 总2页 (文件大小：278K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBTA94
PNP Silicon
-400V, -0.1A, 350mW
Epitaxial Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-23
FEATURES
High Voltage Transistor
A
L
3
3
Top View
C B
MARKING
1
1
2
Product
Marking Code
4D
2
K
F
E
MMBTA44
D
H
J
G
SYMBOL
Millimeter
Min. Max.
Millimeter
REF.
REF.
Collector
Min.
-
0.40
0.08
Max.
0.18
0.60
0.20
A
B
C
D
E
F
2.70
2.10
1.20
0.89
1.78
0.30
3.04
2.80
1.60
1.40
2.04
0.50
G
H
J
K
L
0.6 REF.
0.85
1.15
Base
Emitter
MAXIMUM RATINGS (at T = 25°C unless otherwise specified)
A
PARAMETER
SYMBOL
RATINGS
UNIT
Collector - Base Voltage
VCBO
VCEO
VEBO
IC
-400
-400
V
V
Collector - Emitter Voltage
Emitter - Base Voltage
-5
V
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
-0.1
A
PC
350
mW
℃
TJ, TSTG
150, -55~150
ELECTRICAL CHARACTERISTICS (at T = 25°C unless otherwise specified)
A
PARAMETER
TEST CONDITIONS
SYMBOL MIN.
TYP. MAX. UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
IC =100µA, IE =0
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
-400
-400
-5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
IC = -1mA, IB =0
IE = -100µA, IC =0
VCB = -400V, IE =0
VEB = -4V, IC =0
-
-
V
-0.1
-0.1
-
µA
µA
Emitter Cut-Off Current
IEBO
-
V
CE = -10V, IC = -1mA
hFE1
hFE2
hFE3
hFE4
*
*
*
*
70
80
40
40
-
VCE = -10V, IC = -10mA
VCE = -10V, IC = -50mA
VCE = -10V, IC = -100mA
IC = -10mA, IB = -1mA
IC = -50mA, IB = -5mA
IC = -10mA, IB = -1mA
VCE = -20V, IC = -10mA
300
-
DC Current Gain
-
VCE(sat)1
VCE(sat)2
VBE(sat)
fT
*
-0.2
-0.3
-0.75
-
V
V
Collector-Emitter Saturation Voltage
*
-
Base-Emitter Saturation Voltage
Transition frequency
*Pulse test
*
-
V
50
MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
15-Oct-2010 Rev. A
Page 1 of 2
MMBTA94
PNP Silicon
-400V, -0.1A, 350mW
Epitaxial Transistor
Elektronische Bauelemente
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
15-Oct-2010 Rev. A
Page 2 of 2
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