MMBTA93LT1G [ONSEMI]
High Voltage Transistors PNP Silicon; 高压晶体管PNP硅
| 型号： | MMBTA93LT1G |
| 厂家： | 
ONSEMI |
| 描述： | High Voltage Transistors PNP Silicon |
| 文件： | 总4页 (文件大小：102K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBTA92LT1G,
MMBTA93LT1G
High Voltage Transistors
PNP Silicon
http://onsemi.com
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
COLLECTOR
3
Compliant
MAXIMUM RATINGS
1
BASE
Rating
Symbol
92
93
Unit
Vdc
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
V
CEO
V
CBO
V
EBO
−300
−300
−5.0
−200
−200
−5.0
Vdc
2
EMITTER
Vdc
Collector Current — Continuous
DEVICE MARKING
I
C
−500
mAdc
MARKING
DIAGRAM
3
MMBTA92LT1 = 2D; MMBTA93LT1 = 2E
THERMAL CHARACTERISTICS
Characteristic
1
2
2x MG
G
SOT−23 (TO−236AF)
CASE 318
Symbol
Max
Unit
Total Device Dissipation FR−5 Board
P
225
mW
D
STYLE 6
(Note 1) T = 25°C
A
Derate above 25°C
1.8
556
300
mW/°C
°C/W
mW
2x = Specific Device Code
M
G
= Date Code*
= Pb−Free Package
Thermal Resistance, Junction to Ambient
R
q
JA
Total Device Dissipation (Note 2)
P
D
(Note: Microdot may be in either location)
(2)
Alumina Substrate, T = 25°C
A
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Derate above 25°C
2.4
mW/°C
°C/W
°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R
q
417
JA
T , T
J
−55 to
stg
+150
ORDERING INFORMATION
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
†
Device
Package
Shipping
MMBTA92LT1G
SOT−23
(Pb−Free)
3000 / Tape & Reel
MMBTA92LT3G
MMBTA93LT1G
SOT−23 10000 / Tape & Reel
(Pb−Free)
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
SOT−23
3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
July, 2010 − Rev. 8
MMBTA92LT1/D
MMBTA92LT1G, MMBTA93LT1G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 3)
(I = −1.0 mAdc, I = 0)
V
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
MMBTA92
MMBTA93
−300
−200
−
−
C
B
Collector−Base Breakdown Voltage
(I = −100 mAdc, I = 0)
V
V
Vdc
MMBTA92
MMBTA93
−300
−200
−
−
C
E
Emitter−Base Breakdown Voltage
(I = −100 mAdc, I = 0)
−5.0
−
Vdc
E
C
Collector Cutoff Current
(V = −200 Vdc, I = 0)
I
mAdc
CBO
MMBTA92
MMBTA93
−
−
−0.25
−0.25
CB
E
(V = −160 Vdc, I = 0)
CB
E
Emitter Cutoff Current
(V = −3.0 Vdc, I = 0)
I
−
−0.1
mAdc
EBO
EB
C
ON CHARACTERISTICS (Note 3)
DC Current Gain
h
FE
−
(I = −1.0 mAdc, V = −10 Vdc)
Both Types
Both Types
25
40
−
−
C
CE
(I = −10 mAdc, V = −10 Vdc)
C
CE
(I = −30 mAdc, V = −10 Vdc)
MMBTA92
MMBTA93
25
25
−
−
C
CE
Collector−Emitter Saturation Voltage
(I = −20 mAdc, I = −2.0 mAdc)
V
Vdc
Vdc
CE(sat)
BE(sat)
MMBTA92
MMBTA93
−
−
−0.5
−0.5
C
B
Base−Emitter Saturation Voltage
(I = −20 mAdc, I = −2.0 mAdc)
V
−
−0.9
C
B
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product
f
50
−
MHz
pF
T
(I = −10 mAdc, V = −20 Vdc, f = 100 MHz)
C
CE
Collector−Base Capacitance
(V = −20 Vdc, I = 0, f = 1.0 MHz)
C
cb
MMBTA92
MMBTA93
−
−
6.0
8.0
CB
E
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
300
V
= 10 Vdc
CE
T = +125°C
J
250
200
25°C
150
-55°C
100
50
0
0.1
1.0
10
100
I , COLLECTOR CURRENT (mA)
C
Figure 1. DC Current Gain
http://onsemi.com
2
MMBTA92LT1G, MMBTA93LT1G
100
10
150
130
C
@ 1MHz
ib
110
90
C
cb
@ 1MHz
70
50
30
10
1.0
0.1
T = 25°C
J
V
= 20 Vdc
F = 20 MHz
CE
0.1
1.0
10
100
1000
11
13
15
17
19
21
1
3
5
7
9
V , REVERSE VOLTAGE (VOLTS)
R
I , COLLECTOR CURRENT (mA)
C
Figure 2. Capacitance
Figure 3. Current−Gain − Bandwidth
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
V
V
@ 25°C, I /I = 10
C B
@ 125°C, I /I = 10
C B
CE(sat)
CE(sat)
CE(sat)
BE(sat)
V
V
V
V
V
@ -55°C, I /I = 10
C B
@ 25°C, I /I = 10
C
B
@ 125°C, I /I = 10
C B
BE(sat)
BE(sat)
BE(on)
@ -55°C, I /I = 10
C
B
@ 25°C, V = 10 V
CE
V
V
@ 125°C, V = 10 V
BE(on)
BE(on)
CE
@ -55°C, V = 10 V
CE
0.1
1.0
10
100
I , COLLECTOR CURRENT (mA)
C
Figure 4. “ON” Voltages
1
10 ms
0.1
1.0 s
0.01
0.001
1
10
100
1000
V
, COLLECTOR−EMITTER VOLTAGE (V)
CE
Figure 5. Safe Operating Area
http://onsemi.com
3
MMBTA92LT1G, MMBTA93LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
SEE VIEW C
3
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
H
E
E
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0°
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
2.40
−−−
MAX
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0°
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10°
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
2.64
10°
c
1
2
b
0.25
e
q
A
H
E
q
L
A1
STYLE 6:
L1
VIEW C
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
mm
inches
ǒ
Ǔ
SCALE 10:1
0.8
0.031
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MMBTA92LT1/D
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