MMBTA94 [KEXIN]
PNP Transistors;
| 型号： | MMBTA94 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | PNP Transistors IOT 光电二极管 晶体管 |
| 文件： | 总2页 (文件大小：1806K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
PNP Transistors
MMBTA94 (KMBTA94)
SOT-23-3
Unit: mm
+0.2
-0.1
2.9
0.4
+0.1
-0.1
3
■ Features
● High Breakdown Voltage
●Complement to MMBTA44
1
2
+0.02
-0.02
+0.1
-0.1
0.15
0.95
+0.1
-0.2
1.9
1. Base
2. Emitter
3. Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
-400
-400
-5
Unit
V
Collector - Base Voltage
VCBO
VCEO
VEBO
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current -Pulsed
I
C
-200
-300
350
mA
I
CM
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
P
C
mW
RΘJA
150
℃/W
T
J
150
℃
Storage Temperature range
T
stg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Ic= -100 μA， I =0
Ic= -1 mA， I =0
= -100μA， I =0
CB= -400 V , I =0
EB= -4V , I =0
Min
-400
-400
-5
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
E
B
I
E
C
I
CBO
EBO
V
V
E
-100
-100
-0.2
nA
V
I
C
V
V
CE(sat)1
CE(sat)2
I
I
I
C
=-10 mA, I
B
B
=-1mA
Collector-emitter saturation voltage
Base - emitter saturation voltage
C
C
=-50 mA, I
=-5mA
-0.3
V
BE(sat)
= -10mA, I
B
=- 1mA
-0.75
300
h
FE(1)
FE(2)
FE(3)
FE(4)
V
V
V
V
V
CE= -10V, I
CE= -10V, I
CE= -10V, I
CE= -10V, I
CE= -20V, I
C
= -10mA
80
70
40
40
50
h
C
C
C
C
= -1mA
DC current gain
h
h
= -100mA
= -50mA
Transition frequency
f
T
= 10mA,f=30MHz
MHz
■ Classification of hfe(1)
Type
Range
Marking
MMBTA94
MMBTA94-L
100-200
80-300
4D
1
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SMD Type
Transistors
PNP Transistors
MMBTA94 (KMBTA94)
■ Typical Characterisitics
hFE —— IC
Static Characteristic
-20
-15
-10
-5
-1000
VCE= -10V
COMMON
EMITTER
Ta=25℃
-100uA
-90uA
-80uA
Ta=100 o
C
-70uA
-60uA
-100
Ta=25 o
C
-50uA
-40uA
-30uA
-20uA
IB=-10uA
-0
-10
-0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
-200
-60
-1
-10
-100
-200
-200
-20
COLLECTOR CURRENT IC (mA)
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCEsat —— IC
VBEsat —— IC
-1000
-800
-600
-400
-200
-0
-10
-1
β=10
β=10
Ta=25℃
Ta=100℃
-0.1
Ta=25℃
Ta=100℃
-0.01
-1E-3
-0.1
-1
-10
-100
-1
-10
-100
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (mA)
Cob / Cib ——
fT ——
VCB / VEB
IC
60
1000
100
10
VCE=-20V
Ta=25 o
f=1MHz
IE=0 / IC=0
Ta=25 o
55
50
45
40
35
30
25
20
C
C
Cib
Cob
1
-0
-10
-20
-30
-40
-50
-0.1
-1
REVERSE VOLTAGE
-10
V
(V)
COLLECTOR CURRENT IC (mA)
Pc —— Ta
400
350
300
250
200
150
100
50
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE Ta (℃)
2
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