MMBTA94 [HTSEMI]
TRANSISTOR(PNP); 晶体管（ PNP ）
| 型号： | MMBTA94 |
| 厂家： | 
SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. |
| 描述： | TRANSISTOR(PNP) |
| 文件： | 总1页 (文件大小：301K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBTA94
TRANSISTOR(PNP)
SOT–23
FEATURES
High Breakdown Voltage
MARKING:4D
1. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
2. EMITTER
Symbol
Parameter
Value
Unit
3. COLLECTOR
V
VCBO
Collector-Base Voltage
-400
V
V
VCEO
VEBO
IC
Collector-Emitter Voltage
Emitter-Base Voltage
-400
-5
Collector Current
-100
mA
mW
℃/W
℃
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
350
PC
RΘJA
Tj
357
150
Storage Temperature
Tstg
-55～+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
V(BR)CBO
IC=-100µA, IE=0
IC=-1mA, IB=0
-400
-400
-5
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CEO
V(BR)EBO
ICBO
V
IE=-100µA, IC=0
VCB=-400V, IE=0
VCE=-400V, IB=0
VEB=-4V, IC=0
V
-0.1
-5
µA
µA
µA
ICEO
Collector cut-off current
IEBO
-0.1
300
Emitter cut-off current
hFE(1)
VCE=-10V, IC=-10mA
VCE=-10V, IC=-1mA
VCE=-10V, IC=-100mA
VCE=-10V, IC=-50mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
VCE=-20V,IC=-10mA,
f=30MHz
80
70
40
40
hFE(2)
DC current gain
hFE(3)
hFE(4)
VCE(sat)1
VCE(sat)2
VBE(sat)
-0.2
-0.3
V
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
-0.75
fT
50
MHz
1
JinYu
semiconductor
www.htsemi.com
Date:2011/05
相关型号：
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