MMBTA93LT1 [LRC]
High Voltage Transistor(PNP Silicon); 高压晶体管（ PNP硅）
| 型号： | MMBTA93LT1 |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | High Voltage Transistor(PNP Silicon) |
| 文件： | 总3页 (文件大小：95K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
High Voltage Transistor
PNP Silicon
MMBTA92LT1
3
COLLECTOR
MMBTA93LT1
1
BASE
3
2
EMITTER
MAXIMUM RATINGS
Value
1
Rating
Symbol MMBTA92 MMBTA93 Unit
2
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
V CEO
V CBO
V EBO
I C
–300
–300
–200
–200
Vdc
Vdc
Vdc
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
–5.0
–500
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
PD
225
mW
Derate above 25°C
1.8
556
300
mW/°C
°C/W
mW
Thermal Resistance, Junction to Ambient
Total Device Dissipation
RθJA
PD
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
2.4
mW/°C
°C/W
°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
RθJA
417
TJ , Tstg
–55 to +150
DEVICE MARKING
MMBTA92LT1 = 2D, MMBTA93LT1 = 2E
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
(I C = –1.0 mAdc, I B = 0)
V (BR)CEO
Vdc
MMBTA92
MMBTA93
–300
–200
—
—
Collector–Emitter Breakdown Voltage
V (BR)CBO
Vdc
(I C = –100 µAdc, I E = 0)
MMBTA92
MMBTA93
–300
–200
—
—
Emitter–Base Breakdown Voltage
(I E = –100 µAdc, I C = 0)
Collector Cutoff Current
( V CB = –200Vdc, I E = 0)
( V CB = –160Vdc, I E = 0)
Collector Cutoff Current
( V CB = –3.0Vdc, I C = 0)
V (BR)EBO
I CBO
–5.0
—
Vdc
nAdc
MMBTA92
MMBTA93
—
—
–0.25
–0.25
I EBO
—
–0.1
µAdc
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width
<
300 µs, Duty Cycle
<
2.0%.
M32–1/3
LESHAN RADIO COMPANY, LTD.
MMBTA92LT1 MMBTA93LT1
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
ON CHARACTERISTICS (3)
DC Current Gain
Symbol
Min
Max
Unit
hFE
—
(I C =–1.0mAdc, V CE = –10 Vdc)
(I C = –10 mAdc, V CE = –10Vdc)
(I C = –30mAdc, V CE =–10 Vdc)
Both Types
Both Types
MMBTA92
MMBTA93
25
40
25
25
––
––
––
––
Collector–Emitter Saturation Voltage
(I C = –20mAdc, I B = –2.0 mAdc)
VCE(sat)
Vdc
Vdc
MMBTA92
MMBTA93
––
––
–0.5
–0.5
Base–Emitter Saturation Voltage
(I C = –20mAdc, I B = –2.0 mAdc)
V BE(sat)
—
–0.9
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product(3),(4)
(I C = –10mAdc, V CE= –20Vdc, f = 100MHz)
Collector – Base Capacitance
f T
50
––
MHz
pF
C cb
(V CB = –20 Vdc, I E = 0, f = 1.0 MHz)
MMBTA92
MMBTA93
––
––
6.0
8.0
3. Pulse Test: Pulse Width
< 300 µs, Duty Cycle < 2.0%.
M32–2/3
LESHAN RADIO COMPANY, LTD.
MMBTA92LT1 MMBTA93LT1
150
100
T J = +125°C
V CE = –10 Vdc
+25°C
–55°C
70
50
30
20
15
–1.0
–2.0
–3.0
–5.0
–7.0
–10
–20
–30
–50
–80 –100
I C , COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
100
100
50
T J = 25°C
80
V CE = –20 Vdc
60
C ib
20
10
40
30
5.0
20
2.0
1.0
C cb
0
–1.0
–2.0
–5.0
–10
–20
–50
–100
–0.1 –0.2
–0.5 –1.0 –2.0
–5.0 –10 –20
–50 –100 –200 –500 –1000
I C , COLLECTOR CURRENT (mA)
V R , REVERSE VOLTAGE (VOLTS)
Figure 3. Current–Gain — Bandwidth Product
Figure 2. Capacitances
–1.0
–0.8
V BE @ V CE = –10 V
–0.6
–0.4
–0.2
0
V
CE(sat) @ I C /I B = 10 mA
–1.0
–2.0
–5.0
–10
–20
–50
–100
I C , COLLECTOR CURRENT (mA)
Figure 4. “On” Voltages
M32–3/3
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