MMBT2222AM3T5G [ONSEMI]
NPN General Purpose Transistor; NPN通用晶体管
| 型号： | MMBT2222AM3T5G |
| 厂家： | 
ONSEMI |
| 描述： | NPN General Purpose Transistor |
| 文件： | 总6页 (文件大小：169K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBT2222AM3T5G
NPN General Purpose
Transistor
The MMBT2222AM3T5G device is a spin−off of our popular
SOT−23 three−leaded device. It is designed for general purpose
amplifier applications and is housed in the SOT−723 surface mount
package. This device is ideal for low−power surface mount
applications where board space is at a premium.
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Features
COLLECTOR
3
• Reduces Board Space
• This is a Halide−Free Device
• This is a Pb−Free Device
1
BASE
MAXIMUM RATINGS
2
EMITTER
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Symbol Value
Unit
Vdc
V
CEO
V
CBO
40
75
Vdc
V
6.0
600
Vdc
EBO
MARKING
DIAGRAM
Collector Current − Continuous
THERMAL CHARACTERISTICS
Characteristic
I
C
mAdc
3
SOT−723
CASE 631AA
STYLE 1
AA M
Symbol
Max
Unit
2
Total Device Dissipation
P
D
mW
1
265
2.1
FR−5 Board (Note 1)
AA
M
= Specific Device Code
= Date Code
mW/°C
T = 25°C
A
Derate above 25°C
Thermal Resistance,
R
q
JA
470
°C/W
Junction−to−Ambient
Total Device Dissipation
Alumina Substrate, (Note 2) T = 25°C
Derate above 25°C
P
640
5.1
mW
mW/°C
°C/W
D
ORDERING INFORMATION
A
†
Device
Package
Shipping
Thermal Resistance,
Junction−to−Ambient
R
q
195
JA
MMBT2222AM3T5G SOT−723 8000/Tape & Reel
(Pb−Free)
Junction and Storage Temperature
T , T
−55 to
°C
J
stg
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
+150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.
2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.
©
Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
January, 2009 − Rev. 0
MMBT2222AM3/D
MMBT2222AM3T5G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (I = 10 mAdc, I = 0)
V
40
75
6.0
−
−
−
Vdc
Vdc
C
B
(BR)CEO
(BR)CBO
(BR)EBO
Collector−Base Breakdown Voltage (I = 10 mAdc, I = 0)
V
V
C
E
Emitter−Base Breakdown Voltage (I = 10 mAdc, I = 0)
−
Vdc
E
C
Collector Cutoff Current (V = 60 Vdc, V
= 3.0 Vdc)
I
10
nAdc
mAdc
CE
EB(off)
CEX
Collector Cutoff Current
I
CBO
(V = 60 Vdc, I = 0)
−
−
0.01
10
CB
E
(V = 60 Vdc, I = 0, T = 125°C)
CB
E
A
Emitter Cutoff Current (V = 3.0 Vdc, I = 0)
I
EBO
−
−
100
20
nAdc
nAdc
EB
C
Base Cutoff Current (V = 60 Vdc, V
= 3.0 Vdc)
I
BL
CE
EB(off)
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I = 0.1 mAdc, V = 10 Vdc)
35
50
−
−
C
CE
(I = 1.0 mAdc, V = 10 Vdc)
C
CE
CE
CE
CE
CE
CE
(I = 10 mAdc, V = 10 Vdc)
75
−
C
(I = 10 mAdc, V = 10 Vdc, T = −55°C)
35
−
C
A
(I = 150 mAdc, V = 10 Vdc) (Note 3)
100
50
300
−
C
(I = 150 mAdc, V = 1.0 Vdc) (Note 3)
C
(I = 500 mAdc, V = 10 Vdc) (Note 3)
40
−
C
Collector−Emitter Saturation Voltage (Note 3)
(I = 150 mAdc, I = 15 mAdc)
V
Vdc
Vdc
CE(sat)
−
−
0.3
1.0
C
B
(I = 500 mAdc, I = 50 mAdc)
C
B
Base−Emitter Saturation Voltage (Note 3)
(I = 150 mAdc, I = 15 mAdc)
V
BE(sat)
0.6
−
1.2
2.0
C
B
(I = 500 mAdc, I = 50 mAdc)
C
B
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 4)
f
MHz
T
(I = 20 mAdc, V = 20 Vdc, f = 100 MHz)
300
−
−
C
CE
Output Capacitance (V = 10 Vdc, I = 0, f = 1.0 MHz)
C
obo
8.0
25
pF
pF
kW
CB
E
Input Capacitance (V = 0.5 Vdc, I = 0, f = 1.0 MHz)
C
ibo
−
EB
C
Input Impedance
(I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz)
h
ie
re
fe
2.0
0.25
8.0
1.25
C
CE
(I = 10 mAdc, V = 10 Vdc, f = 1.0 kHz)
C
CE
−4
Voltage Feedback Ratio
h
h
X 10
(I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz)
−
−
8.0
4.0
C
CE
(I = 10 mAdc, V = 10 Vdc, f = 1.0 kHz)
C
CE
Small−Signal Current Gain
(I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz)
−
50
75
300
375
C
CE
(I = 10 mAdc, V = 10 Vdc, f = 1.0 kHz)
C
CE
Output Admittance
h
oe
mmhos
(I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz)
5.0
25
35
200
C
CE
(I = 10 mAdc, V = 10 Vdc, f = 1.0 kHz)
C
CE
Collector Base Time Constant
(I = 20 mAdc, V = 20 Vdc, f = 31.8 MHz)
rb, C
NF
ps
c
−
−
150
4.0
E
CB
Noise Figure (I = 100 mAdc, V = 10 Vdc, R = 1.0 kW, f = 1.0 kHz)
dB
C
CE
S
SWITCHING CHARACTERISTICS
Delay Time
t
−
−
−
−
10
25
d
(V = 30 Vdc, V
C
= −0.5 Vdc,
CC
BE(off)
B1
ns
ns
I
= 150 mAdc, I = 15 mAdc)
Rise Time
Storage Time
Fall Time
t
r
t
225
60
s
(V = 30 Vdc, I = 150 mAdc,
CC
C
I
B1
= I = 15 mAdc)
B2
t
f
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
4. f is defined as the frequency at which |h | extrapolates to unity.
T
fe
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2
MMBT2222AM3T5G
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+ꢀ30 V
200
+ꢀ30 V
1.0 to 100 ms,
DUTY CYCLE ≈ 2.0%
1.0 to 100 ms,
DUTY CYCLE ≈ 2.0%
200
+16 V
+16 V
0
0
1 k
< 20 ns
1N914
-14 V
1 kW
C * < 10 pF
S
-ꢀ2 V
C * < 10 pF
S
< 2 ns
-ꢀ4 V
Scope rise time < 4 ns
*Total shunt capacitance of test jig, connectors, and oscilloscope.
Figure 1. Turn−On Time
Figure 2. Turn−Off Time
1000
700
T = 125°C
J
500
300
200
25°C
100
70
-55°C
50
30
20
V
V
= 1.0 V
= 10 V
CE
CE
10
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
200 300
500 700 1.0 k
I , COLLECTOR CURRENT (mA)
C
Figure 3. DC Current Gain
1.0
0.8
T = 25°C
J
0.6
0.4
0.2
0
I
C
= 1.0 mA
10 mA
150 mA
500 mA
0.005
0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20 30
50
I , BASE CURRENT (mA)
B
Figure 4. Collector Saturation Region
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3
MMBT2222AM3T5G
200
100
500
V
CC
I /I = 10
= 30 V
I /I = 10
C B
300
T = 25°C
J
C B
t′ = t - 1/8 t
f
s
s
200
I = I
B1 B2
70
50
t @ V = 30 V
CC
r
t @ V
T = 25°C
J
= 2.0 V
= 0
d
t @ V
EB(off)
EB(off)
100
70
d
30
20
t
f
50
30
20
10
7.0
5.0
10
3.0
2.0
7.0
5.0
5.0 7.0 10
20 30
50 70 100
200 300 500
5.0 7.0 10
20 30
50 70 100
200 300 500
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 5. Turn−On Time
Figure 6. Turn−Off Time
10
10
R
S
R
S
R
S
= OPTIMUM
= SOURCE
= RESISTANCE
f = 1.0 kHz
= 50 mA
I
= 1.0 mA, R = 150 W
S
C
8.0
8.0
500 mA, R = 200 W
S
I
C
100 mA, R = 2.0 kW
S
100 mA
500 mA
1.0 mA
50 mA, R = 4.0 kW
S
6.0
4.0
2.0
0
6.0
4.0
2.0
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
50 100
50 100 200
500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
R , SOURCE RESISTANCE (OHMS)
f, FREQUENCY (kHz)
S
Figure 7. Frequency Effects
Figure 8. Source Resistance Effects
30
500
V
CE
= 20 V
20
T = 25°C
J
300
200
C
eb
10
7.0
5.0
100
C
cb
3.0
2.0
70
50
30
I , COLLECTOR CURRENT (mA)
50 70 100
0.1 0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 50
1.0
2.0 3.0
5.0 7.0 10
20
REVERSE VOLTAGE (VOLTS)
C
Figure 9. Capacitances
Figure 10. Current−Gain Bandwidth Product
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4
MMBT2222AM3T5G
1.0
0.8
+0.5
0
T = 25°C
J
R
q
VC
for V
CE(sat)
V
@ I /I = 10
C B
BE(sat)
-ꢀ0.5
1.0 V
0.6
0.4
0.2
0
-ꢀ1.0
-ꢀ1.5
V
@ V = 10 V
CE
BE(on)
R
for V
BE
-ꢀ2.0
-ꢀ2.5
q
VB
V
@ I /I = 10
C B
CE(sat)
0.1 0.2 0.5 1.0 2.0 5.0 10 20
50 100 200 500 1.0 k
0.1 0.2
0.5 1.0 2.0
5.0 10 20
50 100 200 500
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 11. “On” Voltages
Figure 12. Temperature Coefficients
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5
MMBT2222AM3T5G
PACKAGE DIMENSIONS
SOT−723
CASE 631AA−01
ISSUE C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
−X−
D
A
b1
−Y−
3
E
MILLIMETERS
INCHES
NOM MAX
0.018 0.020 0.022
L
HE
1
2
DIM MIN
NOM
0.50
0.21
0.31
0.12
1.20
0.80
MAX
0.55
0.27 0.0059 0.0083 0.0106
0.37 0.010 0.012 0.015
0.17 0.0028 0.0047 0.0067
1.25
0.85
MIN
A
b
b1
C
D
E
e
H E
L
0.45
0.15
0.25
0.07
1.15
0.75
b 2X
C
e
0.08 (0.0032) X Y
0.045 0.047 0.049
0.03 0.032 0.034
0.016 BSC
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.40 BSC
1.20
0.20
1.15
0.15
1.25
0.045 0.047 0.049
0.25 0.0059 0.0079 0.0098
SOLDERING FOOTPRINT*
0.40
0.0157
0.40
0.0157
1.0
0.039
0.40
0.0157
0.40
0.0157
0.40
0.0157
mm
inches
ǒ
Ǔ
SCALE 20:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
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MMBT2222AM3/D
相关型号：
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