MMBT2222AT [TYSEMI]
Ultra-Small Surface Mount Package; 超小型表面贴装封装
| 型号： | MMBT2222AT |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | Ultra-Small Surface Mount Package |
| 文件： | 总2页 (文件大小：150K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product specification
MMBT2222AT
SOT-523
Unit: mm
+0.1
1.6-0.1
+0.1
1.0-0.1
+0.05
+0.01
0.2-0.05
0.1-0.01
■ Features
● Ultra-Small Surface Mount Package
2
1
● Complementary PNP type available(MMBT2907AT)
3
+0.25
0.3-0.05
+0.1
0.5-0.1
1. Base
2. Emitter
3. Collecter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-base voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
75
V
V
Collector-emitter voltage
40
6
Emitter-base voltage
V
Collector current
600
mA
mW
℃/W
℃
Power dissipation
PD
150
Thermal resistance from junction to ambient
Operating and Storage and Temperature Range
RθJA
833
Tj, TSTG
-55 to +150
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Product specification
MMBT2222AT
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test conditions
Min
75
40
6
Typ Max
Unit
V
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector cutoff current
V(BR)CBO IC = 10 μA, IE = 0
V(BR)CEO IC = 10 mA, IB = 0
V
V(BR)EBO IC = 10 μA, IC = 0
V
ICBO
ICEX
IEBO
VCB=60V, IE=0
10
10
nA
nA
nA
Collector cut-off current
VCE=30V,VBE(off)=3V
VEB= 3V, IC=0
Emitter cutoff current
100
VCE=10V, IC= 0.1mA
VCE=10V, IC= 150mA
VCE=10V, IC= 500mA
40
100
42
DC current gain
hFE
300
0.3
1
V
V
V
V
IC = 150 mA; IB = 15 mA
collector-emitter saturation voltage *
base-emitter saturation voltage *
VCE(sat)
IC = 500 mA; IB = 50 mA
0.6
1.2
2
IC = 150 mA; IB = 15 mA
VBE(sat)
fT
IC = 500 mA; IB = 50 mA
Transition frequency
Delay time
Rise time
300
MHz
ns
ns
IC = 20 mA; VCE = 20 V; f = 100 MHz
VCC=30V, VBE(off)=-0.5V,
IC=150mA , IB1= 15mA
td
tr
10
25
Storage time
Fall time
ts
225
60
ns
VCC=30V, IC=150mA,IB1=-IB2=15mA
tf
ns
* pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%.
■ Marking
Marking
1P
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