首页 |元器件品牌

MMBT2222AT-7 [DIODES]

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR; NPN小信号表面贴装晶体管
MMBT2222AT-7
型号： MMBT2222AT-7
厂家： DIODES INCORPORATED    DIODES INCORPORATED
描述：

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
NPN小信号表面贴装晶体管

晶体 晶体管
文件： 总3页 (文件大小：59K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
MMBT2222AT  
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR  
Features  
·
·
Epitaxial Planar Die Construction  
Complementary PNP Type Available  
(MMBT2907AT)  
SOT-523  
Dim Min Max Typ  
A
B
C
D
G
H
J
0.15 0.30 0.22  
0.75 0.85 0.80  
1.45 1.75 1.60  
A
C
·
Ultra-Small Surface Mount Package  
Mechanical Data  
C
B
TOP VIEW  
¾
¾
0.50  
·
·
·
·
Case: SOT-523, Molded Plastic  
Case material - UL Flammability Rating 94V-0  
Moisture sensitivity: Level 1 per J-STD-020A  
Terminals: Solderable per MIL-STD-202,  
Method 208  
Terminal Connections: See Diagram  
Marking (See Page 2): 1P  
Ordering & Date Code Information, See Page 2  
Weight: 0.002 grams (approx.)  
B
E
0.90 1.10 1.00  
1.50 1.70 1.60  
0.00 0.10 0.05  
0.60 0.80 0.75  
0.10 0.30 0.22  
0.10 0.20 0.12  
0.45 0.65 0.50  
G
H
K
J
M
K
L
N
·
·
·
·
L
D
M
N
a
C
0°  
8°  
¾
All Dimensions in mm  
E
B
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
MMBT2222AT  
Unit  
V
Collector-Base Voltage  
75  
40  
Collector-Emitter Voltage  
V
Emitter-Base Voltage  
6.0  
V
Collector Current - Continuous  
Power Dissipation (Note 1)  
600  
mA  
mW  
°C/W  
°C  
Pd  
150  
RqJA  
Thermal Resistance, Junction to Ambient (Note 1)  
Operating and Storage and Temperature Range  
833  
Tj, TSTG  
-55 to +150  
Notes:  
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout  
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
DS30268 Rev. 2 - 2  
1 of 3  
MMBT2222AT  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
Characteristic  
OFF CHARACTERISTICS (Note 2)  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
Symbol  
Min  
Max  
Unit  
Test Condition  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICEX  
IC = 10mA, IE = 0  
75  
40  
6.0  
¾
¾
¾
¾
10  
20  
V
V
IC = 10mA, IB = 0  
IE = 10mA, IC = 0  
V
VCE = 60V, VEB(OFF) = 3.0V  
VCE = 60V, VEB(OFF) = 3.0V  
nA  
nA  
IBL  
Base Cutoff Current  
¾
ON CHARACTERISTICS (Note 2)  
IC = 100mA, VCE = 10V  
35  
50  
¾
¾
¾
¾
¾
IC = 1.0mA, VCE = 10V  
hFE  
DC Current Gain  
IC = 10mA, VCE = 10V  
75  
¾
I
C = 150mA, VCE = 10V  
100  
40  
IC = 500mA, VCE = 10V  
IC = 150mA, IB = 15mA  
0.3  
1.0  
VCE(SAT)  
VBE(SAT)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
¾
V
V
I
C = 500mA, IB = 50mA  
IC = 150mA, IB = 15mA  
IC = 500mA, IB = 50mA  
0.6  
¾
1.2  
2.0  
SMALL SIGNAL CHARACTERISTICS  
Output Capacitance  
VCB = 10V, f = 1.0MHz, IE = 0  
VEB = 0.5V, f = 1.0MHz, IC = 0  
Cobo  
Cibo  
¾
8
pF  
pF  
Input Capacitance  
—
30  
V
CE = 20V, IC = 20mA,  
fT  
Current Gain-Bandwidth Product  
300  
¾
MHz  
f = 100MHz  
hie  
hre  
hfe  
hoe  
VCE = 10 Vdc, IC = 10 mAdc, f = 1.0kHz  
VCE = 10 Vdc, IC = 10 mAdc, f = 1.0kHz  
VCE = 10 Vdc, IC = 10 mAdc, f = 1.0kHz  
VCE = 10 Vdc, IC = 10 mAdc, f = 1.0kHz  
Input Impedance  
0.25  
¾
1.25  
4.0  
kW  
X 10-4  
¾
Voltage Feedback Ratio  
Small-Signal Current Gain  
Output Admittance  
75  
375  
200  
25  
mS  
V
CE = 10 Vdc, IC = 100 mAdc,  
Noise Figure  
NF  
¾
4.0  
dB  
RS = 1.0 k ohms, f = 1.0kHz  
SWITCHING CHARACTERISTICS  
Delay Time  
td  
tr  
¾
¾
¾
¾
10  
25  
ns  
ns  
ns  
ns  
V
CC = 30V, IC = 150mA,  
VBE(off) = - 0.5V, IB1 = 15mA  
Rise Time  
ts  
tf  
Storage Time  
225  
60  
VCC = 30V, IC = 150mA,  
IB1 = IB2 = 15mA  
Fall Time  
(Note 3)  
Ordering Information  
Device  
Packaging  
Shipping  
MMBT2222AT-7  
SOT-523  
3000/Tape & Reel  
Notes: 2. Short duration test pulse used to minimize self-heating effect.  
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.  
Marking Information  
1P = Product Type Marking Code  
YM = Date Code Marking  
Y = Year (ex: N = 2002)  
M = Month (ex: 9 = September)  
1PYM  
Date Code Key  
Year  
1998  
1999  
2000  
2001  
2002  
2003  
2004  
2005  
2006  
2007  
2008  
2009  
Code  
J
K
L
M
N
P
R
S
T
U
V
W
Month  
Code  
Jan  
Feb  
March  
Apr  
May  
Jun  
Jul  
Aug  
Sep  
Oct  
Nov  
Dec  
1
2
3
4
5
6
7
8
9
O
N
D
DS30268 Rev. 2 - 2  
2 of 3  
MMBT2222AT  
1000  
250  
200  
(see Note 1)  
TA = 125°C  
100  
150  
TA = +25°C  
TA = -25°C  
100  
50  
0
10  
VCE = 1.0V  
1
1
1000  
10  
0.1  
100  
0
100  
200  
IC, COLLECTOR CURRENT (mA)  
TA, AMBIENT TEMPERATURE (°C)  
Fig. 1, Power Derating Curve  
Fig. 2, Typical DC Current Gain vs  
Collector Current  
2.0  
30  
IC = 30mA  
1.8  
1.6  
1.4  
1.2  
1.0  
IC = 1mA  
20  
10  
IC = 10mA  
Cibo  
IC = 100mA  
IC = 300mA  
0.8  
0.6  
0.4  
5.0  
1.0  
Cobo  
0.2  
0
0.1  
0.001  
0.01  
10  
100  
1
1.0  
10  
50  
0.1  
IB, BASE CURRENT (mA)  
Fig. 4 Typical Collector Saturation Region  
REVERSE VOLTAGE (V)  
Fig. 3 Capacitances (Typical)  
DS30268 Rev. 2 - 2  
3 of 3  
MMBT2222AT  

相关型号：

MMBT2222AT-7-F

 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
DIODES

MMBT2222AT-TP

 NPN General Purpose Amplifier
MCC

MMBT2222AT-TP-HF

 Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3
MCC

MMBT2222AT/R

 TRANSISTOR 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BIP General Purpose Small Signal
NXP

MMBT2222ATB

 NPN GENERAL PURPOSE SWITCHING TRANSISTOR
PANJIT

MMBT2222ATB_15

 NPN GENERAL PURPOSE SWITCHING TRANSISTOR
PANJIT

MMBT2222ATRL

 暂无描述
NXP

MMBT2222ATT1

 General Purpose Transistor
ONSEMI

MMBT2222ATT1

 General Purpose Transistor
WILLAS

MMBT2222ATT1G

 General Purpose Transistor
ONSEMI

MMBT2222ATT1_10

 General Purpose Transistor
ONSEMI

MMBT2222ATT3G

 NPN Bipolar Junction Transistor
ONSEMI
©2020 ICPDF网 联系我们和版权申明