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MMBT2222AT-7-F [DIODES]

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR; NPN小信号表面贴装晶体管
MMBT2222AT-7-F
型号： MMBT2222AT-7-F
厂家： DIODES INCORPORATED    DIODES INCORPORATED
描述：

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
NPN小信号表面贴装晶体管

晶体 小信号双极晶体管 光电二极管 PC
文件： 总4页 (文件大小：168K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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SPICE MODEL: MMBT2222AT  
MMBT2222AT  
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR  
Lead-free  
Features  
·
·
·
·
Epitaxial Planar Die Construction  
SOT-523  
A
Complementary PNP Type Available (MMBT2907AT)  
Ultra-Small Surface Mount Package  
Dim Min Max Typ  
C
A
B
C
D
G
H
J
0.15 0.30 0.22  
0.75 0.85 0.80  
1.45 1.75 1.60  
Lead Free/RoHS Compliant (Note 2)  
C
B
TOP VIEW  
B
E
Mechanical Data  
¾
¾
0.50  
G
H
·
Case: SOT-523  
0.90 1.10 1.00  
1.50 1.70 1.60  
0.00 0.10 0.05  
0.60 0.80 0.75  
0.10 0.30 0.22  
0.10 0.20 0.12  
0.45 0.65 0.50  
·
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
K
M
N
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C  
K
L
J
Terminals: Solderable per MIL-STD-202, Method 208  
L
D
Lead Free Plating (Matte Tin Finish annealed over  
Alloy 42 leadframe).  
M
N
a
·
·
·
·
Terminal Connections: See Diagram  
Marking (See Page 4): 1P  
C
0°  
8°  
¾
Ordering & Date Code Information, See Page 4  
Weight: 0.002 grams (approximate)  
All Dimensions in mm  
E
B
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
75  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
40  
V
Emitter-Base Voltage  
6.0  
V
Collector Current - Continuous  
Power Dissipation (Note 1)  
600  
mA  
mW  
°C/W  
°C  
Pd  
150  
R
qJA  
Thermal Resistance, Junction to Ambient (Note 1)  
Operating and Storage Temperature Range  
833  
Tj, TSTG  
-55 to +150  
Notes:  
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout  
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. No purposefully added lead  
DS30268 Rev. 8 - 2  
1 of 4  
MMBT2222AT  
www.diodes.com  
ã Diodes Incorporated  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
Characteristic  
OFF CHARACTERISTICS (Note 3)  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
Symbol  
Min  
Max  
Unit  
Test Condition  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICEX  
IC = 10mA, IE = 0  
75  
40  
6.0  
¾
¾
¾
¾
10  
20  
V
V
IC = 10mA, IB = 0  
IE = 10mA, IC = 0  
V
VCE = 60V, VEB(OFF) = 3.0V  
VCE = 60V, VEB(OFF) = 3.0V  
nA  
nA  
IBL  
Base Cutoff Current  
¾
ON CHARACTERISTICS (Note 3)  
IC = 100mA, VCE = 10V  
35  
50  
¾
¾
¾
¾
¾
IC = 1.0mA, VCE = 10V  
hFE  
DC Current Gain  
IC = 10mA, VCE = 10V  
IC = 150mA, VCE = 10V  
IC = 500mA, VCE = 10V  
75  
¾
100  
40  
IC = 150mA, IB = 15mA  
IC = 500mA, IB = 50mA  
0.3  
1.0  
VCE(SAT)  
VBE(SAT)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
¾
V
V
IC = 150mA, IB = 15mA  
IC = 500mA, IB = 50mA  
0.6  
¾
1.2  
2.0  
SMALL SIGNAL CHARACTERISTICS  
Output Capacitance  
VCB = 10V, f = 1.0MHz, IE = 0  
VEB = 0.5V, f = 1.0MHz, IC = 0  
Cobo  
Cibo  
¾
8
pF  
pF  
Input Capacitance  
—
30  
VCE = 20V, IC = 20mA,  
f = 100MHz  
fT  
Current Gain-Bandwidth Product  
300  
¾
MHz  
hie  
hre  
hfe  
hoe  
VCE = 10 Vdc, IC = 10 mAdc, f = 1.0kHz  
VCE = 10 Vdc, IC = 10 mAdc, f = 1.0kHz  
VCE = 10 Vdc, IC = 10 mAdc, f = 1.0kHz  
VCE = 10 Vdc, IC = 10 mAdc, f = 1.0kHz  
Input Impedance  
0.25  
¾
1.25  
4.0  
kW  
X 10-4  
¾
Voltage Feedback Ratio  
Small-Signal Current Gain  
Output Admittance  
75  
375  
200  
25  
mS  
VCE = 10 Vdc, IC = 100 mAdc,  
RS = 1.0 k ohms, f = 1.0kHz  
Noise Figure  
NF  
¾
4.0  
dB  
SWITCHING CHARACTERISTICS  
Delay Time  
td  
tr  
¾
¾
¾
¾
10  
25  
ns  
ns  
ns  
ns  
VCC = 30V, IC = 150mA,  
VBE(off) = - 0.5V, IB1 = 15mA  
Rise Time  
ts  
tf  
Storage Time  
225  
60  
VCC = 30V, IC = 150mA,  
IB1 = IB2 = 15mA  
Fall Time  
Notes: 3. Short duration pulse test used to minimize self-heating effect.  
1000  
250  
(see Note 1)  
T
A
= 125°C  
200  
100  
150  
T
= +25°C  
A
T = -25°C  
A
100  
10  
50  
V
= 1.0V  
CE  
1
0
1
1000  
10  
0.1  
100  
40  
0
80  
120  
160  
200  
I , COLLECTOR CURRENT (mA)  
C
T , AMBIENT TEMPERATURE (°C)  
A
Fig. 2 Typical DC Current Gain vs  
Collector Current  
Fig. 1, Power Derating Curve  
DS30268 Rev. 8 - 2  
2 of 4  
MMBT2222AT  
www.diodes.com  
2.0  
35  
30  
25  
20  
15  
I
= 30mA  
C
1.8  
1.6  
1.4  
1.2  
1.0  
I
= 1mA  
f = 1MHz  
C
I
= 10mA  
C
I
= 100mA  
C
I
= 300mA  
C
Cibo  
0.8  
0.6  
0.4  
10  
Cobo  
5
0.2  
0
0
0.001  
0
8
12  
2
4
10  
14 16 18 20  
6
0.1  
I , BASE CURRENT (mA)  
0.01  
1
10  
100  
V , REVERSE VOLTAGE (V)  
R
B
Fig. 3 Typical Capacitance Characteristics  
Fig. 4 Typical Collector Saturation Region  
0.5  
1.0  
I
C
= 10  
V
= 5V  
I
B
CE  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.4  
T = -50°C  
A
T
A
= 25°C  
0.3  
T
= 25°C  
A
T = 150°C  
A
0.2  
T = 150°C  
A
0.1  
T = -50°C  
A
0
1000  
10  
1
100  
0.1  
1
10  
100  
I , COLLECTOR CURRENT (mA)  
C
I , COLLECTOR CURRENT (mA)  
C
Fig. 5 Collector Emitter Saturation Voltage  
vs. Collector Current  
Fig. 6 Base Emitter Voltage vs. Collector Current  
1000  
V
= 5V  
CE  
100  
10  
1
1
10  
I , COLLECTOR CURRENT (mA)  
C
100  
Fig. 7 Gain Bandwidth Product vs. Collector Current  
DS30268 Rev. 8 - 2  
3 of 4  
www.diodes.com  
MMBT2222AT  
(Note 4)  
Ordering Information  
Device  
Packaging  
Shipping  
MMBT2222AT-7-F  
SOT-523  
3000/Tape & Reel  
Notes: 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.  
Marking Information  
1P = Product Type Marking Code  
YM = Date Code Marking  
1PYM  
Y = Year (ex: N = 2002)  
M = Month (ex: 9 = September)  
Date Code Key  
Year  
1998  
1999  
2000  
2001  
2002  
2003  
2004  
2005  
2006  
2007  
2008  
2009  
2010  
2011 2012  
Code  
J
K
L
M
N
P
R
S
T
U
V
W
X
Y
Z
Month  
Code  
Jan  
Feb  
March  
Apr  
May  
Jun  
Jul  
Aug  
Sep  
Oct  
Nov  
Dec  
1
2
3
4
5
6
7
8
9
O
N
D
IMPORTANT NOTICE  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further  
notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither  
does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will  
agreetoholdDiodes Incorporatedandall thecompanies whoseproducts arerepresentedonour website, harmless againstall damages.  
LIFE SUPPORT  
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the  
PresidentofDiodes Incorporated.  
DS30268 Rev. 8 - 2  
4 of 4  
MMBT2222AT  
www.diodes.com  

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