MMBT2222AT [WINNERJOIN]
TRANSISTOR (NPN); 晶体管（ NPN ）
| 型号： | MMBT2222AT |
| 厂家： | 
SHENZHEN YONGERJIA INDUSTRY CO.,LTD |
| 描述： | TRANSISTOR (NPN) |
| 文件： | 总2页 (文件大小：140K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RoHS
MMBT2222AT
MMBT2222AT TRANSISTOR (NPN)
SOT-523
1. BASE
FEATURES
Power dissipation
2. EMITTER
3. COLLECTOR
PCM:
0.15
W (Tamb=25℃)
Collector current
ICM:
Collector-base voltage
0.6
75
A
V
V(BR)CBO
:
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
MAX
UNIT
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
75
40
6
V
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Ic= 10µA, IE=0
Ic= 10mA, IB=0
V
IE=10µA, IC=0
VCB=70V, IE=0
0. 1
0. 1
0. 1
µA
µA
µA
ICEO
VCE=35V, IB=0
Collector cut-off current
IEBO
VEB= 3V, IC=0
Emitter cut-off current
hFE(1)
VCE=10V, IC= 0.1mA
VCE=10V, IC= 1mA
VCE=10V, IC= 10mA
VCE=10V, IC= 150mA
VCE=10V, IC= 500mA
IC=150 mA, IB= 15mA
IC=500 mA, IB= 50mA
IC=150 mA, IB=15mA
IC=500 mA, IB= 50mA
35
50
hFE(2)
DC current gain
hFE(3)
75
hFE(4)
100
40
hFE(5)
VCE(sat)1
0.3
1
V
V
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE(sat)2
VBE(sat)1
VBE(sat)2
1.2
2
VCE=20V, IC= 20mA
f=100MHz
300
MHz
pF
Transition frequency
Output Capacitance
fT
VCB=10V, IE= 0
f=1MHz
8
Cob
10
25
nS
nS
Delay time
Rise time
td
tr
VCC=30V, IC=150mA
VBE(off)=0.5V, IB1=15mA
WEJ ELECTRONIC CO.,LTD
225
nS
Storage time
tS
VCC=30V, IC=150mA
60
nS
Fall time
tf
IB1= IB2= 15mA
Marking
:1P
Http:// www.wej.cn
E-mail:wej@yongerjia.com
WEJ ELECTRONIC CO.
RoHS
MMBT2222AT
WTD
Http:// www.wej.cn
E-mail:wej@yongerjia.com
WEJ ELECTRONIC CO.
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