MMBT2222ARF [TSC]
300mW, NPN Small Signal Transistor; 300MW， NPN小信号晶体管
| 型号： | MMBT2222ARF |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 300mW, NPN Small Signal Transistor |
| 文件： | 总3页 (文件大小：1477K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBT2222A
300mW, NPN Small Signal Transistor
Small Signal Transistor
SOT-23
3 Collector
A
F
2 Emitter
1 Base
B
E
Features
Epitaxial planar die construction
Surface device type mounting
Moisture sensitivity level 1
C
G
D
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Pb free version and RoHS compliant
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
Unit (mm)
Unit (inch)
Dimensions
Min
2.80
1.20
0.30
1.80
2.25
0.90
Max
Min
Max
Mechanical Data
Case : SOT- 23 small outline plastic package
A
B
C
D
E
F
3.00 0.110 0.118
1.40 0.047 0.055
0.50 0.012 0.020
2.00 0.071 0.079
2.55 0.089 0.100
1.20 0.035 0.043
Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
High temperature soldering guaranteed: 260°C/10s
Weight : 0.008gram (approximately)
Marking Code : 1P
G
0.550 REF
0.022 REF
Ordering Information
Suggested PAD Layout
0.95
Part No.
MMBT2222A RF
MMBT2222A RFG
Package
SOT-23
SOT-23
Packing
Marking
1P
0.037
3K / 7" Reel
3K / 7" Reel
1P
2.0
0.079
0.9
0.035
0.8
0.031
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Symbol
Value
Units
mW
V
Power Dissipation
PD
VCBO
VCEO
VEBO
IC
300
Collector-Base Voltage
75
Collector-Emitter Voltage
Emitter-Base Voltage
40
V
6
600
V
Collector Current
mA
°C/W
°C
Thermal Resistance (Junction to Ambient) (Note 1)
Junction and Storage Temperature Range
RθJA
TJ, TSTG
417
-55 to + 150
Notes:1. Valid provided that electrodes are kept at ambient temperature
Version : A10
MMBT2222A
300mW, NPN Small Signal Transistor
Small Signal Transistor
Electrical Characteristics
Type Number
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Min
75
40
6
Max
Units
V
IC= 10μA
IC= 10mA
IE= 10μA
IE= 0
IB= 0
IC= 0
IE= 0
-
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
-
V
-
0.01
0.01
0.01
-
V
VCB= 60V
-
μA
μA
μA
VCE= 60V
ICEX
Collector Cut-off Current
VBE(off)= 3.0V
-
V
EB= 3.0V
VCE= 10V
CE= 10V
CE= 10V
VCE= 10V
CE= 10V
IEBO
Emitter Cut-off Current
IC= 0
-
IC= 500mA
IC= 150mA
IC= 10mA
IC= 1mA
IC= 0.1mA
IB= 50mA
IB= 50mA
f= 100MHz
f= 1.0MHz
f= 1.0MHz
40
100
75
50
35
-
V
300
-
V
hFE
DC current gain
-
V
-
IC= 500mA
IC= 500mA
IC= 20mA
IE = 0
VCE(sat)
1.0
2.0
-
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
Transition frequency
V
V
VBE(sat)
-
fT
Cobo
Cibo
td
V
CE= 20V
CB= 10V
300
MHz
pF
pF
nS
nS
nS
nS
V
8
Output capacitance
IC = 0
VEB= 0.5V
25
Input capacitance
Delay time
V
V
V
V
CC=30V VBE(off)=-0.5V IC=150mA IB1=15mA
CC=30V VBE(off)=-0.5V IC=150mA IB1=15mA
CC=30V IC=150mA IB1=-IB2=15mA
-
-
-
-
10
25
tr
Rise time
ts
Storage time
Fall time
225
60
tf
CC=30V IC=150mA IB1=-IB2=15mA
Tape & Reel specification
TSC label
Item
Carrier width
Carrier length
Carrier depth
Sprocket hole
Symbol
Dimension(mm)
3.15 ±0.10
2.77 ±0.10
1.22 ±0.10
1.50 ± 0.10
178 ± 1
A
B
Top Cover Tape
C
d
Carieer Tape
D
Reel outside diameter
Reel inner diameter
Feed hole width
D1
D2
E
55 Min
Any Additional Label (If Required)
13.0 ± 0.20
1.75 ±0.10
3.50 ±0.05
4.00 ±0.10
2.00 ±0.05
0.229 ±0.013
8.10 ±0.20
12.30 ±0.20
P0
Sprocke hole position
Punch hole position
Sprocke hole pitch
Embossment center
Overall tape thickness
Tape width
d
P1
F
T
E
P0
P1
T
A
F
W
C
B
W
W1
Reel width
W1
D
D2
D1
Direction of Feed
Version : A10
MMBT2222A
300mW, NPN Small Signal Transistor
Small Signal Transistor
Rating and Characteristic Curves
30
350
300
250
20
Cibo
10
200
150
5.0
100
50
Cobo
1.0
0
0
1.0
10
50
200
0.1
175
25
50
150
75 100 125
TA , AMBIENT TEMPERATURE (°C)
Fig. 1 Max Power Dissipation vs Ambient Temperature
REVERSE VOLTS (V)
Fig. 2 Typical Capacitance
1000
1000
VCE = 5V
TA = 125°C
100
100
TA = +25°C
TA = -25°C
10
10
VCE = 1.0V
1
1
1
1000
10
0.1
100
1
10
100
IC, COLLECTOR CURRENT (mA)
IC , COLLECTOR CURRENT (mA)
Fig.3 Typical DC Current Gain vs Collector Current
Fig. 4 Gain Bandwidth Product vs. Collector Current
1.0
0.9
0.5
0.4
IC
VCE = 5V
= 10
IB
TA = -50°C
0.8
0.7
0.6
0.5
0.4
0.3
0.2
TA = 25°C
0.3
0.2
TA = 25°C
TA = 150°C
TA = 150°C
0.1
0
TA = -50°C
1000
10
0.1
1
10
100
1
100
IC , COLLECTOR CURRENT (mA)
Fig. 5 Collector Emitter Saturation Voltage
vs. Collector Current
IC , COLLECTOR CURRENT (mA)
Fig. 6 Base Emitter Voltage vs. Collector Current
Version : A10
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