MMBT2222AT [SECOS]
NPN Silicon General Purpose Transistors; NPN硅通用晶体管
| 型号： | MMBT2222AT |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | NPN Silicon General Purpose Transistors |
| 文件： | 总5页 (文件大小：813K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBT2222AT
NPN Silicon
General Purpose Transistors
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
SOT-523
ꢀ
ꢀ
ꢀ
Epitaxial Planar Die Construction
Complementary PNP Type Available(MMBT2907FW)
Ideal for Medium Power Amplification and Switching
MARKING CODE
1P
PACKAGE INFORMATION
Package
MPQ
3K
Leader Size
Millimeter
Millimeter
REF.
REF.
Min.
1.50
0.75
0.60
0.23
Max.
1.70
0.95
0.80
0.33
Min.
Max.
SOT-523
7 inch
A
B
C
D
K
M
N
S
0.30
---
---
0.50
o
10
o
10
1.50
1.70
G
J
0.50BSC
0.10
0.20
Collector
3
1
Base
2
Emitter
MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Collector - Emitter Voltage
Symbol
VCEO
VCBO
VEBO
IC
Ratings
40
Unit
V
Collector - Base Voltage
75
V
Emitter - Base Voltage
6
V
mA
mW
°C / W
°C
Collector Current - Continuous
Total Device Dissipation FR-4 Board @ TA=25°C 1
Thermal Resistance, Junction to Ambient
600
PD
150
RθJA
833
Junction & Storage Temperature
Note:
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint.
TJ, TSTG
-55~150
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
17-Aug-2011 Rev. A
Page 1 of 5
MMBT2222AT
NPN Silicon
General Purpose Transistors
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Characteristic
Symbol
Min.
Max.
Unit
Test Conditions
Off Characteristics
Collector-Emitter Breakdown Voltage 1
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
V(BR)CEO
-
-
V
V
IC=10 mA, IB=0
40
75
6
V(BR)CBO
V(BR)EBO
IBL
IC=10µA, IE=0
-
V
IE= -10 µA, IC=0
VCE=60V, VEB=3V
VCE=60V, VBE=3V
-
20
100
nA
nA
Emitter Cut-Off Current
ICEX
-
On Characteristics1
35
50
75
100
40
-
-
-
IC=0.1mA, VCE=10V
IC=1mA, VCE=10V
DC Current Gain1
hFE
-
IC=10mA, VCE=10V
IC=150mA, VCE=10V
IC=500mA, VCE=10V
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
-
-
0.3
1
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCE(sat)
V
V
-
0.6
-
1.2
2
VBE(sat)
Small-Signal Characteristics
VCE=20V, IC=20mA,
f=100MHz
fT
250
-
MHz
Curren-Gain-Bandwidth Product
Output Capacitance
Input Capacitance
Cobo
Cibo
hie
-
-
8
30
pF
pF
VCB=10V, IE=0, f =1.0 MHz
VBE=0.5V, IE=0, f =1.0 MHz
Input Impedancen
0.25
-
1.25
4
KΩ VCE=10V, IC=10mA, f=1.0kHz
X10-4 VCE=10V, IC=10mA, f=1.0kHz
VCE=10V, IC=10mAdc, f=1.0kHz
Voltage Feedback Ratio
Small-Signal Current Gain
Output Admittance
hre
hfe
75
25
375
200
hoe
µmhos VCE=10V, IC=10mAdc, f=1.0kHz
VCE=10V, IC=100µA,
dB
Noise Figure
NF
-
4.0
RS=1KΩ, f=1.0kHz
Switching Characteristics
Delay Time
Rise Time
Td
Tr
10
25
-
-
-
-
VCC=3V, VBE= -0.5 V,
IC=150mA, IB1=15mA
nS
nS
Storage Time
TS
TF
225
60
VCC=30V, IC=150mA,
IB1=IB2=15mA
Fall Time
Note:
1. Pulse Test: Pulse Width ≤ 300s, Duty Cycle ≤ 2.0%.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
17-Aug-2011 Rev. A
Page 2 of 5
MMBT2222AT
NPN Silicon
General Purpose Transistors
Elektronische Bauelemente
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
17-Aug-2011 Rev. A
Page 3 of 5
MMBT2222AT
NPN Silicon
General Purpose Transistors
Elektronische Bauelemente
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
17-Aug-2011 Rev. A
Page 4 of 5
MMBT2222AT
NPN Silicon
General Purpose Transistors
Elektronische Bauelemente
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
17-Aug-2011 Rev. A
Page 5 of 5
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