MMBT2222AQ-7-F [DIODES]
40V NPN SMALL SIGNAL TRANSISTOR;
| 型号： | MMBT2222AQ-7-F |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 40V NPN SMALL SIGNAL TRANSISTOR |
| 文件： | 总7页 (文件大小：244K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBT2222A
40V NPN SMALL SIGNAL TRANSISTOR IN SOT23
Features
Mechanical Data
•
•
•
•
•
•
•
Epitaxial Planar Die Construction
•
•
Case: SOT23
Complementary PNP Type: MMBT2907A
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish; Solderable per MIL-STD-202,
Method 208
Ideal for Low Power Amplification and Switching
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
•
•
•
Weight: 0.008 grams (Approximate)
C
SOT23
E
B
C
B
E
Top View
Pin-Out
Top View
Device Symbol
Ordering Information (Notes 4 & 5)
Product
Status
Active
Active
Active
Compliance
AEC-Q101
AEC-Q101
Automotive
Marking
K1P
Reel Size (inches) Tape Width (mm) Quantity per Reel
MMBT2222A-7-F
MMBT2222A-13-F
MMBT2222AQ-7-F
7
13
7
8
8
8
3,000
10,000
3,000
K1P
K1P
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified. For more information, please refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT23
K1P = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: D = 2016)
M or M = Month (ex: 9 = September)
K1P
Date Code Key
Year
2015
2016
2017
2018
2019
2020
2021
2022
2023
2024
Code
C
D
E
F
G
H
I
J
K
L
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
1 of 7
www.diodes.com
April 2016
© Diodes Incorporated
MMBT2222A
Document number: DS30041 Rev. 16 - 2
MMBT2222A
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VCBO
VCEO
VEBO
IC
Value
75
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
40
V
6.0
V
600
800
200
mA
mA
mA
Peak Collector Current
Peak Base Current
ICM
IBM
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
(Note 6)
(Note 7)
(Note 6)
(Note 7)
(Note 8)
310
350
Collector Power Dissipation
mW
PD
403
Thermal Resistance, Junction to Ambient
°C/W
RθJA
357
Thermal Resistance, Junction to Leads
350
°C/W
°C
RθJL
Operating and Storage Temperature Range
-55 to +150
TJ,TSTG
ESD Ratings (Note 9)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
JEDEC Class
V
V
3A
C
Notes:
6. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR-4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
7. Same as Note 6, except the device is mounted on 15 mm x 15mm 1oz copper.
8. Thermal resistance from junction to solder-point (at the end of the leads).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
2 of 7
www.diodes.com
April 2016
© Diodes Incorporated
MMBT2222A
Document number: DS30041 Rev. 16 - 2
MMBT2222A
Thermal Characteristics and Derating Information
0.4
0.3
0.2
0.1
0.0
400
350
300
250
200
150
100
50
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
10 100 1k
0
0
25
50
75 100 125 150
1m 10m 100m
1
100µ
Temperature (oC)
Pulse Width (s)
Transient Thermal Impedance
Derating Curve
10
1
Single Pulse. TA=25oC
0.1
10m
100m
1
10
100
1k
Pulse Width (s)
Pulse Power Dissipation
3 of 7
www.diodes.com
April 2016
© Diodes Incorporated
MMBT2222A
Document number: DS30041 Rev. 16 - 2
MMBT2222A
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Test Condition
IC = 100µA, IE = 0
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 10)
Emitter-Base Breakdown Voltage
75
40
V
V
V
BVCBO
BVCEO
BVEBO
IC = 10mA, IB = 0
IE = 100µA, IC = 0
VCB = 60V, IE = 0
VCB = 60V, IE = 0, TA = +150°C
VCE = 60V, VEB(OFF) = 3.0V
VCE = 60V, VBE = ±0.25V
VEB = 5.0V, IC = 0
6.0
nA
µA
Collector Cut-Off Current
10
ICBO
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
10
10
10
20
nA
nA
nA
nA
ICEX
ICEV
IEBO
IBL
Base Cut-Off Current
VCE = 60V, VEB(OFF) = 3.0V
ON CHARACTERISTICS (Note 10)
IC = 100µA, VCE = 10V
IC = 1.0mA, VCE = 10V
IC = 10mA, VCE = 10V
IC = 150mA, VCE = 10V
IC = 500mA, VCE = 10V
IC = 10mA, VCE = 10V, TA = -55°C
IC = 150mA, VCE = 1.0V
300
35
50
75
100
40
50
DC Current Gain
hFE
35
0.3
1.0
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
V
V
VCE(SAT)
VBE(SAT)
0.6
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
1.2
2.0
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
8
pF
pF
Cobo
Cibo
VCB = 10V, f = 1.0MHz, IE = 0
VEB = 0.5V, f = 1.0MHz, IC = 0
Input Capacitance
—
25
VCE = 20V, IC = 20mA,
f = 100MHz
Current Gain-Bandwidth Product
300
MHz
dB
fT
VCE = 10V, IC = 100µA,
RS = 1.0kΩ, f = 1.0kHz
Noise Figure
4.0
NF
SWITCHING CHARACTERISTICS
Delay Time
VCC = 30V, IC = 150mA,
VBE(OFF) = - 0.5V, IB1 = 15mA
10
25
ns
ns
tD
tR
VCC = 3.0V, IC = 150mA, IB1 = 15mA,
VBE(OFF) = 0.5V
Rise Time
VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
Storage Time
Fall Time
225
60
ns
ns
tS
tF
VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA
Note: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
4 of 7
www.diodes.com
April 2016
© Diodes Incorporated
MMBT2222A
Document number: DS30041 Rev. 16 - 2
MMBT2222A
1,000
0.5
0.4
I
C
= 10
I
B
T
= 125°C
A
I
T
= 25°C
A
-
100
10
1
0.3
0.2
T
A
= 25°C
T
= -25°C
T
= 150°C
A
A
,
0.1
0
T
= -50°C
A
V
= 1.0V
CE
1
1,000
1,000
10
IC, COLLECTOR CURRENT (mA)
10
1
100
0.1
100
IC, COLLECTOR CURRENT (mA)
Figure 1 Typical DC Current Gain vs. Collector Current
Figure 2 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
)
35
30
1.0
f = 1MHz
V
CE
= 5V
0.9
0.8
0.7
0.6
0.5
0.4
T
= -50°C
A
25
20
T
= 25°C
A
C
ibo
15
10
T
= 150°C
A
C
obo
5
0
0.3
0.2
0
8
12
VR, REVERSE VOLTAGE (V)
Figure 4 Typical Capacitance Characteristics
2
4
10
14 16 18 20
6
0.1
1
10
100
IC, COLLECTOR CURRENT (mA)
Figure 3 Base-Emitter Turn-On Voltage
vs. Collector Current
2.0
1.8
1.6
1.4
1,000
100
V
= 5V
I = 30mA
C
CE
I
= 1mA
C
I
= 10mA
C
I
= 100mA
C
I
= 300mA
C
1.2
1.0
0.8
0.6
0.4
10
0.2
0
1
0.1
IB, BASE CURRENT (mA)
Figure 6 Typical Collector Saturation Region
0.001
0.01
10
100
1
10
100
1
IC, COLLECTOR CURRENT (mA)
Figure 5 Typical Gain Bandwidth Product
vs. Collector Current
5 of 7
www.diodes.com
April 2016
© Diodes Incorporated
MMBT2222A
Document number: DS30041 Rev. 16 - 2
MMBT2222A
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
All 7°
H
SOT23
GAUGE PLANE
0.25
Dim
A
B
C
D
F
G
H
Min
Max
0.51
1.40
2.50
1.03 0.915
0.60 0.535
Typ
0.40
1.30
2.40
J
0.37
1.20
2.30
0.89
0.45
1.78
2.80
K
K1
a
M
A
L
L1
2.05
3.00
1.83
2.90
0.05
J
0.013 0.10
K
K1
L
L1
M
a
0.890 1.00 0.975
0.903 1.10 1.025
C
B
0.45
0.25
0.61
0.55
0.55
0.40
0.085 0.150 0.110
0° 8° --
D
All Dimensions in mm
G
F
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
Y
Dimensions Value (in mm)
C
X
2.0
0.8
Y1
C
X1
Y
1.35
0.9
Y1
2.9
X
X1
6 of 7
www.diodes.com
April 2016
© Diodes Incorporated
MMBT2222A
Document number: DS30041 Rev. 16 - 2
MMBT2222A
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2016, Diodes Incorporated
www.diodes.com
7 of 7
www.diodes.com
April 2016
© Diodes Incorporated
MMBT2222A
Document number: DS30041 Rev. 16 - 2
相关型号：
©2020 ICPDF网 联系我们和版权申明