TEA1207UK [NXP]
IC SWITCHING REGULATOR, 330 kHz SWITCHING FREQ-MAX, PBGA8, 2 X 2 MM, 0.46 MM HEIGHT, PLASTIC, LFBGA-8, Switching Regulator or Controller;
| 型号： | TEA1207UK |
| 厂家： | 
NXP |
| 描述： | IC SWITCHING REGULATOR, 330 kHz SWITCHING FREQ-MAX, PBGA8, 2 X 2 MM, 0.46 MM HEIGHT, PLASTIC, LFBGA-8, Switching Regulator or Controller 开关 |
| 文件： | 总20页 (文件大小：77K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
DATA SHEET
TEA1207UK
High efficiency DC/DC converter
Chip Scale package
Product specification
2002 Jul 03
Philips Semiconductors
Product specification
High efficiency DC/DC converter Chip
Scale package
TEA1207UK
FEATURES
GENERAL DESCRIPTION
• Fully integrated DC/DC converter circuit
• Up-or-down conversion
The TEA1207UK is a fully integrated DC/DC converter.
Efficient, compact and dynamic power conversion is
achieved using a novel digitally controlled concept such as
Pulse Width Modulation (PWM) or Pulse Frequency
Modulation (PFM), integrated low RDSon CMOS power
switches with low parasitic capacitances, and fully
synchronous rectification.
• Start-up from 1.85 V input voltage
• Adjustable output voltage
• High efficiency over large load range
• Power handling capability up to 0.85 A continuous
average current
The device operates at a 275 kHz switching frequency
which enables the use of external components with
minimum size. Deadlock is prevented by an on-chip
undervoltage lockout circuit.
• 275 kHz switching frequency
• Low quiescent power consumption
• Synchronizing with external clock
• True current limit for Li-ion battery compatibility
• Up to 100% duty cycle in down mode
• Undervoltage lockout
Efficient behaviour during short load peaks and
compatibility with Li-ion batteries is guaranteed by an
accurate current limiting function.
• Shut-down function
• 2 × 2 mm footprint chip scale package.
APPLICATIONS
• Cellular and cordless phones, Personal Digital
Assistants (PDAs) and others
• Supply voltage source for low-voltage chip sets
• Portable computers
• Battery backup supplies
• Cameras.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
DESCRIPTION
VERSION
TEA1207UK
LFBGA8
plastic low profile fine-pitch ball grid array package;
−
8 balls; body 2 × 2 × 0.46 mm
2002 Jul 03
2
Philips Semiconductors
Product specification
High efficiency DC/DC converter Chip
Scale package
TEA1207UK
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
Voltage levels
UPCONVERSION; BALL U/D = LOW
VI
input voltage
VI(start)
2.80
−
5.50
5.50
1.85
V
V
V
VO
output voltage
−
VI(start)
start-up input voltage
IL < 125 mA
1.40
1.60
DOWNCONVERSION; BALL U/D = HIGH
VI
input voltage
2.80
1.30
−
−
5.50
5.50
V
V
VO
output voltage
GENERAL
Vfb
feedback voltage
1.19
1.24
1.29
V
Current levels
Iq
quiescent current on ball A1
down mode; VI = 3.6 V
52
−
65
2
72
µA
µA
A
Ishdwn
ILX
current in shut-down state
10
maximum continuous current on
ball A2
Tamb = 60 °C
−
−
0.85
∆Ilim
current limiting deviation
Ilim = 0.5 to 5 A
up mode
−17.5
−17.5
−
−
+17.5
+17.5
%
%
down mode
Power MOSFETs
RDSon
drain-to-source on-state resistance
N-type
P-type
0.10
0.10
0.20
0.22
0.30
0.35
Ω
Ω
Efficiency
η1
efficiency upconversion
VI = 3.6 V; VO = 4.6 V;
L1 = 10 µH
IL = 1 mA
−
−
−
88
95
83
−
−
−
%
%
%
IL = 200 mA
IL = 1 A; pulsed
η2
efficiency downconversion
VI = 3.6 V; VO = 2.0 V;
L1 = 10 µH
IL = 1 mA
−
−
−
86
93
81
−
−
−
%
%
%
IL = 200 mA
IL = 1 A; pulsed
Timing
fsw
switching frequency
PWM mode
220
4
275
6.5
50
330
20
−
kHz
MHz
µs
fsync
tres
synchronization clock input frequency
response time
from standby to Po(max)
−
2002 Jul 03
3
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g
P-type POWER FET
A2
C1
A1
LX
UPOUT/DNIN
I/V
INTERNAL
SUPPLY
CONVERTER
sense FET
START-UP
ILIM
CIRCUIT
TEA1207UK
B2
CONTROL LOGIC
AND
MODE GEARBOX
FB
CURRENT LIMIT
COMPARATORS
I/V
CONVERTER
N-type
POWER
FET
TEMPERATURE
PROTECTION
BAND GAP
REFERENCE
TIME
COUNTER
sense
FET
13 MHz
OSCILLATOR
SYNC
GATE
DIGITAL CONTROLLER
A3
B1
C3
C2
MGU402
GND
SYNC
SHDWN U/D
Fig.1 Block diagram.
Philips Semiconductors
Product specification
High efficiency DC/DC converter Chip
Scale package
TEA1207UK
PINNING
When high output power is requested, the device will
operate in the PWM mode. This results in minimum AC
currents in the circuit components and hence optimum
efficiency, minimum cost and low EMC. In this operating
mode, the output voltage is allowed to vary between two
predefined voltage levels. As long as the output voltage
stays within this so-called window, switching continues in
a fixed pattern. When the output voltage reaches one of
the window borders, the digital controller immediately
reacts by adjusting the pulse width and inserting a current
step in such a way that the output voltage stays within the
window with higher or lower current capability. This
approach enables very fast reaction to load variations.
Figure 3 shows the converter’s response to a sudden load
increase. The upper trace shows the output voltage. The
ripple on top of the DC level is a result of the current in the
output capacitor, which changes in sign twice per cycle,
times the capacitor’s internal Equivalent Series
SYMBOL
BALL
DESCRIPTION
UPOUT/DNIN
A1
output voltage in up mode;
input voltage in down mode
LX
A2
A3
B1
B2
C1
inductor connection
ground
GND
SYNC
FB
synchronization clock input
feedback input
ILIM
current limiting resistor
connection
U/D
C2
C3
up-or-down mode selection
input; active LOW for up mode
SHDWN
shut-down input
Resistance (ESR). After each ramp-down of the inductor
current, i.e. when the ESR effect increases the output
voltage, the converter determines what to do in the next
cycle. As soon as more load current is taken from the
output the output voltage starts to decay.
handbook, halfpage
When the output voltage becomes lower than the low limit
of the window, a corrective action is taken by a ramp-up of
the inductor current during a much longer time. As a result,
the DC current level is increased and normal PWM control
can continue. The output voltage (including ESR effect) is
again within the predefined window. Figure 4 shows the
spread of the output voltage window. The absolute value
is most dependent on spread, while the actual window size
is not affected. For one specific device, the output voltage
will not vary more than 2% typical.
C1
B1
A1
C2
B2
A2
C3
A3
MGU399
In low output power situations, the TEA1207UK will switch
over to PFM mode. In this mode, regulation information
from earlier PWM operating modes is used. This results in
optimum inductor peak current levels in the PFM mode,
which are slightly larger than the inductor ripple current in
the PWM mode. As a result, the transition between PFM
and PWM mode is optimum under all circumstances. In the
PFM mode the TEA1207UK regulates the output voltage
to the high window limit shown in Fig.3.
Fig.2 Ball configuration (bottom view).
FUNCTIONAL DESCRIPTION
Control mechanism
The TEA1207UK is able to operate in PFM (discontinuous
conduction) or PWM (continuous conduction) operating
mode. All switching actions are completely determined by
a digital control circuit which uses the output voltage level
as its control input. This novel digital approach enables the
use of a new pulse width and frequency modulation
scheme, which ensures optimum power efficiency over the
complete operating range of the converter.
2002 Jul 03
5
Philips Semiconductors
Product specification
High efficiency DC/DC converter Chip
Scale package
TEA1207UK
Synchronous rectification
Current limiters
For optimum efficiency over the whole load range,
synchronous rectifiers within the TEA1207UK ensure that
during the whole second switching phase, all inductor
current will flow through the low-ohmic power MOSFETs.
Special circuitry is included which detects when the
inductor current reaches zero. Following this detection, the
digital controller switches off the power MOSFET and
proceeds with regulation.
If the current in one of the power switches exceeds its limit
in the PWM mode, the current ramp is stopped
immediately, and the next switching phase is entered.
Current limiting is required to enable optimum use of
energy in Li-ion batteries, and to keep power conversion
efficient during temporary high loads. Furthermore, current
limiting protects the IC against overload conditions,
inductor saturation, etc. The current limiting level is set by
an external resistor.
Start-up
External synchronization
Start-up from low input voltage in boost mode is realized
by an independent start-up oscillator, which starts
switching the N-type power MOSFET as soon as the
voltage at ball UPOUT/DNIN is sufficiently high. The
switch actions of the start-up oscillator will increase the
output voltage. As soon as the output voltage is high
enough for normal regulation, the digital control system
takes over the control of the power MOSFETs.
If an external high frequency clock is applied to the
synchronization clock input, the switching frequency in
PWM mode will be exactly that frequency divided by 22.
In PFM mode, the switching frequency is always lower.
The quiescent current of the device increases when
external clock pulses are applied. If no external
synchronization is necessary, the synchronization clock
input must be connected to ground.
Undervoltage lockout
Behaviour when the input voltage exceeds the
specified range
As a result of too high load or disconnection of the input
power source, the output voltage can drop so low that
normal regulation cannot be guaranteed. In this event, the
device switches back to start-up mode. If the output
voltage drops down even further, switching is stopped
completely.
In general, an input voltage exceeding the specified range
is not recommended since instability may occur. There are
two exceptions:
• Upconversion: at an input voltage higher than the target
output voltage, but up to 6 V, the converter will stop
switching and the internal P-type power MOSFET will be
conducting. The output voltage will equal the input
voltage minus some resistive voltage drop. The current
limiting function is not active.
Shut-down
When the shut-down input is made HIGH, the converter
disables both power switches and the power consumption
is reduced to a few microamperes.
• Downconversion: when the input voltage is lower than
the target output voltage, but higher than 2.8 V, the
P-type power MOSFET will stay conducting resulting in
an output voltage being equal to the input voltage minus
some resistive voltage drop. The current limiting
function remains active.
Power switches
The power switches in the IC are one N-type and one
P-type power MOSFET, having a typical drain-to-source
resistance of 0.20 and 0.22 Ω respectively. The maximum
average current in the power switches is 0.60 A at
Tamb = 80 °C.
Temperature protection
When the device operates in the PWM mode, and the die
temperature gets too high (typically 175 °C), the converter
stops operating. It resumes operation when the die
temperature falls below 175 °C again. As a result, low
frequent cycling between the on and off state will occur.
It should be noted that in the event of a device temperature
around the cut-off limit, the application will differ strongly
from the maximum specification.
2002 Jul 03
6
Philips Semiconductors
Product specification
High efficiency DC/DC converter Chip
Scale package
TEA1207UK
load increase
start corrective action
V
o
high window limit
low window limit
time
I
L
MGK925
time
Fig.3 Response to load increase.
maximum positive spread of V
fb
V
h
upper specification limit
2%
V
l
+4%
V
h
V
out, typ
2%
V
l
−4%
V
h
2%
lower specification limit
V
typical situation
l
maximum negative spread of V
MGR667
fb
Fig.4 Spread of location of output voltage window.
7
2002 Jul 03
Philips Semiconductors
Product specification
High efficiency DC/DC converter Chip
Scale package
TEA1207UK
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
voltage on any ball
CONDITIONS
shut-down mode
operating mode
MIN.
−0.2
MAX.
+6.5
UNIT
Vn
V
V
−0.2
−25
−40
−40
+5.9
Tj
junction temperature
+150
+80
°C
°C
°C
V
Tamb
Tstg
Ves
ambient temperature
storage temperature
+125
+4000
+300
electrostatic handling voltage
human body model; note 1 −4000
machine model; note 2 −300
V
Notes
1. Class 3; equivalent to discharging a 100 pF capacitor through a 1500 resistor.
2. Class 2; equivalent to discharging a 200 pF capacitor through a 10 Ω resistor and a 0.75 µH inductor.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-a)
thermal resistance from junction to
Printed-Circuit Board (PCB)
in free air; note 1
145
K/W
Note
1. The thermal resistance is highly dependent on printed-circuit board type and metal routing. The value given is valid
for a single metal layer printed-circuit board.
QUALITY SPECIFICATION
In accordance with “SNW-FQ-611 part E”.
2002 Jul 03
8
Philips Semiconductors
Product specification
High efficiency DC/DC converter Chip
Scale package
TEA1207UK
CHARACTERISTICS
Tamb = −40 to +80 °C; all voltages are measured with respect to ground; positive currents flow into the IC; unless
otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Voltage levels
UPCONVERSION; BALL U/D = LOW
Vi
input voltage
VI(start)
2.80
−
−
5.50
V
V
V
V
Vo
output voltage
5.50
1.85
2.50
Vi(start)
Vi(uvlo)
start-up input voltage
undervoltage lockout input voltage
IL < 125 mA
1.40
1.60
2.10
note 1
1.50
DOWNCONVERSION; BALL U/D = HIGH
Vi
input voltage
note 2
2.80
1.30
−
−
5.50
5.50
V
V
Vo
output voltage
GENERAL
Vfb
feedback input voltage
output voltage window
1.19
1.5
1.24
2.0
1.29
3.0
V
∆Vwdw
PWM mode
%
Current levels
Iq
quiescent current on ball A1
down mode;
52
65
72
µA
V3 = 3.0 V; note 3
Ishdwn
ILX
current in shut-down mode
−
−
−
2
−
−
10
µA
A
maximum continuous current on
ball A2
Tamb = 60 °C
0.85
0.60
T
amb = 80 °C
A
∆Ilim
current limit deviation
Ilim = 0.5 to 5.0 A;
note 4
up mode
−17.5
−17.5
−
−
+17.5
+17.5
%
%
down mode
Power MOSFETs
RDSon
drain-to-source on-state resistance
N-type
P-type
0.10
0.10
0.20
0.22
0.30
0.35
Ω
Ω
Efficiency
η1
efficiency upconversion
VI = 3.6 V; VO = 4.6 V;
L1 = 10 µH; note 5
IL = 1 mA
−
−
−
−
−
−
−
88
93
93
94
95
92
83
−
−
−
−
−
−
−
%
%
%
%
%
%
%
IL = 10 mA
IL = 50 mA
IL = 100 mA
IL = 200 mA
IL = 500 mA
IL = 1 A; pulsed
2002 Jul 03
9
Philips Semiconductors
Product specification
High efficiency DC/DC converter Chip
Scale package
TEA1207UK
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
η2
efficiency downconversion
VI = 3.6 V; VO = 2.0 V;
L1 = 10 µH; note 5
IL = 1 mA
−
−
−
−
−
−
−
86
−
−
−
−
−
−
−
%
%
%
%
%
%
%
IL = 10 mA
IL = 50 mA
IL = 100 mA
IL = 200 mA
IL = 500 mA
IL = 1 A; pulsed
91
92
92
93
89
81
Timing
fsw
switching frequency
PWM mode
220
4
275
6.5
50
330
20
−
kHz
MHz
µs
fsync
tres
Temperature
synchronization clock input frequency
response time
from standby to Po(max)
−
Tamb
ambient temperature
maximum internal cut-off temperature
−40
+25
175
+80
200
°C
°C
Tco(max)
150
Digital levels
VlL
LOW-level input voltage on balls B1,
0
−
0.4
V
C2 and C3
VIH
HIGH-level input voltage
on ball C2
note 6
V3 − 0.4
−
−
V3 + 0.3
V3 + 0.3
V
V
on balls B1 and C3
0.55V3
Notes
1. The undervoltage lockout voltage shows wide specification limits since it decreases at increasing temperature. When
the temperature increases, the minimum supply voltage of the digital control part of the IC decreases and therefore
the correct operation of this function is guaranteed over the whole temperature range.
2. When Vi is lower than the target output voltage but higher than 2.8 V, the P-type power MOSFET will remain
conducting (100% duty cycle), resulting in Vo following Vi.
3. V3 is the voltage on ball A1 (UPOUT/DNIN).
4. The current limit is defined by the external resistor Rlim (see Section “Current limiting resistors”). Accuracy of the
current limit increases in proportion to the programmed current limiting level.
5. The specified efficiency is valid when using an output capacitor having an ESR of 0.10 Ω and a 10 µH small size
inductor (Coilcraft DT1608C-103).
6. If the applied HIGH-level voltage is less than V3 to 1 V, the quiescent current (lq) of the device will increase.
2002 Jul 03
10
Philips Semiconductors
Product specification
High efficiency DC/DC converter Chip
Scale package
TEA1207UK
APPLICATION INFORMATION
D1
UPOUT/DNIN
A1
B2
V
O
L1
LX
TEA1207UK
R1
R2
V
A2
I
FB
C2
C2
A3
B1
C3
C1
C1
U/D GND SYNC SHDWN ILIM
R
lim
MGU400
Fig.5 Complete application diagram for upconversion.
L1
UPOUT/DNIN
LX
FB
V
V
A1
A2
B2
I
O
TEA1207UK
R1
R2
C1
C2
C1
B1
A3
C3
C2
U/D ILIM SYNC GND SHDWN
D1
R
lim
MGU401
Fig.6 Complete application diagram for downconversion.
11
2002 Jul 03
Philips Semiconductors
Product specification
High efficiency DC/DC converter Chip
Scale package
TEA1207UK
External component selection
• Use 1% accurate SMD type resistors only. In case larger
body resistors are used, the capacitance on ball B2
(feedback input) will be too large, causing inaccurate
operation.
INDUCTOR L1
The performance of the TEA1207UK is not very sensitive
to inductance value. Best efficiency performance over a
wide load current range is achieved by using e.g.
TDK SLF7032-6R8M1R6, having an inductance of 6.8 µH
and a saturation current level of 1.6 A. In case the
maximum output current is lower, other inductors are also
suitable such as the small sized Coilcraft DT1608 range.
• Resistors R1 and R2 should have a maximum value of
57 kΩ when connected in parallel. A higher value will
result in inaccurate operation.
Under these conditions, the output voltage can be
R1
calculated by the formula: VO = 1.24 × 1 +
-------
R2
INPUT CAPACITOR C1
CURRENT LIMITING RESISTORS
The value of capacitor C1 strongly depends on the type of
input source. In general, a 100 µF tantalum capacitor will
do, or a 10 µF ceramic capacitor featuring very low series
resistance (ESR value).
The maximum instantaneous current is set by the external
resistors Rlim. The preferred type is SMD, 1% accurate.
The connection of resistor Rlim differs per mode:
• At upconversion (up mode): resistor Rlim must be
connected between ball C1 (ILIM) and ball A1
(UPOUT/DNIN). The current limiting level is defined by:
OUTPUT CAPACITOR C2
The value and type of capacitor C2 depend on the
maximum output current and the ripple voltage which is
allowed in the application. Low-ESR tantalum capacitors
show good results. The most important specification of
capacitor C2 is its ESR, which mainly determines the
output voltage ripple.
238
Rlim
Ilim
=
---------
• At downconversion (down mode): resistor Rlim must be
connected between ball C1 (ILIM) and ball A3 (GND).
270
The current limiting level is defined by: I lim
=
---------
Rlim
DIODE D1
The Schottky diode is only used for a short time during
takeover from N-type power MOSFET and P-type power
MOSFET and vice versa. Therefore, a medium-power
diode such as Philips PRLL5819 is sufficient.
The average inductor current during limited current
operation also depends on the inductance value, input
voltage, output voltage and resistive losses in all
components in the power path. Ensure that Ilim < Isat
saturation current of the inductor.
FEEDBACK RESISTORS R1 AND R2
The output voltage is determined by the resistors
R1 and R2. The following conditions apply:
2002 Jul 03
12
Philips Semiconductors
Product specification
High efficiency DC/DC converter Chip
Scale package
TEA1207UK
PACKAGE OUTLINE
LFBGA8: plastic low profile fine-pitch ball grid array package; 8 balls; body 2.0 x 2.0 x 0.46 mm
TEA1207
B
A
E
D
ball A1
index area
A
2
A
A
1
detail X
b
w M
A
y
e
Z
v
A
D
Z
E
C
B
A
e
X
1
2
3
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
UNIT
A
1
A
2
b
e
y
Z
Z
E
D
E
v
w
D
max.
0.28 0.48 0.38 2.05 2.05
0.20 0.44 0.26 1.95 1.95
0.63 0.63
0.38 0.38
mm 0.70
0.03
0.5 0.05
0.1
MSD746
REFERENCES
JEDEC JEITA
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
TEA1207
2002 Jul 03
13
Philips Semiconductors
Product specification
High efficiency DC/DC converter Chip
Scale package
TEA1207UK
SOLDERING
If wave soldering is used the following conditions must be
observed for optimal results:
Introduction to soldering surface mount packages
• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “Data Handbook IC26; Integrated Circuit Packages”
(document order number 9398 652 90011).
• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
There is no soldering method that is ideal for all surface
mount IC packages. Wave soldering can still be used for
certain surface mount ICs, but it is not suitable for fine pitch
SMDs. In these situations reflow soldering is
recommended.
– smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
Reflow soldering
The footprint must incorporate solder thieves at the
downstream end.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
• For packages with leads on four sides, the footprint must
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
Several methods exist for reflowing; for example,
convection or convection/infrared heating in a conveyor
type oven. Throughput times (preheating, soldering and
cooling) vary between 100 and 200 seconds depending
on heating method.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 220 °C for
thick/large packages, and below 235 °C for small/thin
packages.
Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Manual soldering
Wave soldering
Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.
Conventional single wave soldering is not recommended
for surface mount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.
When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.
To overcome these problems the double-wave soldering
method was specifically developed.
2002 Jul 03
14
Philips Semiconductors
Product specification
High efficiency DC/DC converter Chip
Scale package
TEA1207UK
Suitability of surface mount IC packages for wave and reflow soldering methods
SOLDERING METHOD
PACKAGE(1)
WAVE
not suitable
REFLOW(2)
BGA, LBGA, LFBGA, SQFP, TFBGA, VFBGA
suitable
HBCC, HBGA, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, HVQFN, not suitable(3)
HVSON, SMS
suitable
PLCC(4), SO, SOJ
LQFP, QFP, TQFP
SSOP, TSSOP, VSO
suitable
suitable
not recommended(4)(5) suitable
not recommended(6)
suitable
Notes
1. For more detailed information on the BGA packages refer to the “(LF)BGA Application Note” (AN01026); order a copy
from your Philips Semiconductors sales office.
2. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”.
3. These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder
cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side,
the solder might be deposited on the heatsink surface.
4. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
5. Wave soldering is suitable for LQFP, TQFP and QFP packages with a pitch (e) larger than 0.8 mm; it is definitely not
suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
6. Wave soldering is suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
2002 Jul 03
15
Philips Semiconductors
Product specification
High efficiency DC/DC converter Chip
Scale package
TEA1207UK
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS(1)
STATUS(2)
DEFINITIONS
Objective specification
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary specification Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product specification
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2002 Jul 03
16
Philips Semiconductors
Product specification
High efficiency DC/DC converter Chip
Scale package
TEA1207UK
NOTES
2002 Jul 03
17
Philips Semiconductors
Product specification
High efficiency DC/DC converter Chip
Scale package
TEA1207UK
NOTES
2002 Jul 03
18
Philips Semiconductors
Product specification
High efficiency DC/DC converter Chip
Scale package
TEA1207UK
NOTES
2002 Jul 03
19
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2002
SCA74
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
403502/02/pp20
Date of release: 2002 Jul 03
Document order number: 9397 750 08491
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