TEA1330 [STMICROELECTRONICS]

DUAL LOW-VOLTAGE POWER AMPLIFIER; 双路低电压功率放大器
TEA1330
型号: TEA1330
厂家: ST    ST
描述:

DUAL LOW-VOLTAGE POWER AMPLIFIER
双路低电压功率放大器

放大器 功率放大器
文件: 总11页 (文件大小:138K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
TDA2822M  
DUAL LOW-VOLTAGE POWER AMPLIFIER  
.
.
.
.
SUPPLY VOLTAGE DOWN TO 1.8V  
LOW CROSSOVER DISTORSION  
LOW QUIESCENT CURRENT  
BRIDGE OR STEREO CONFIGURATION  
MINIDIP  
ORDERING NUMBER : TDA2822M  
DESCRIPTION  
The TDA2822M is a monolithic integrated circuit in  
8 lead Minidip package. It is intended for use as  
dual audio power amplifier in portable cassette  
players and radios.  
PIN CONNECTION (Top view)  
1/11  
March 1995  
TDA2822M  
SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
15  
Unit  
V
Vs  
Io  
Supply Voltage  
Peak Output Current  
1
A
Ptot  
Total Power Dissipation at Tamb = 50 °C  
at Tcase = 50 °C  
1
1.4  
W
W
Tstg, Tj  
Storage and Junction Temperature  
– 40, + 150  
°C  
THERMAL DATA  
Symbol  
Parameter  
Value  
100  
70  
Unit  
°C/W  
°C/W  
Rth j-amb  
Rth j-case  
Thermal Resistance Junction-ambient  
Thermal Resistance Junction-pin (4)  
Max.  
Max.  
2/11  
TDA2822M  
ELECTRICAL CHARACTERISTICS (VS = 6V, Tamb = 25oC, unlessotherwise specified)  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max. Unit  
STEREO (test circuit of Figure 1)  
Vs  
Vo  
Supply Voltage  
1.8  
15  
9
V
Quiescent Output Voltage  
2.7  
1.2  
V
V
Vs = 3V  
Id  
Ib  
Quiescent Drain Current  
Input Bias Current  
6
mA  
nA  
100  
Po  
Output Power (each channel)  
(f = 1kHz, d = 10%)  
mW  
RL = 32  
VS = 9V  
VS = 6V  
VS = 4.5V  
VS = 3V  
VS = 2V  
VS = 6V  
VS = 9V  
VS = 6V  
VS = 6V  
VS = 4.5V  
VS = 3V  
300  
120  
60  
90  
15  
20  
5
RL = 16Ω  
RL = 8Ω  
170  
220  
1000  
380  
650  
320  
110  
300  
450  
RL = 4Ω  
d
Distortion (f = 1kHz)  
RL = 32Ω  
RL = 16Ω  
RL = 8Ω  
Po = 40mW  
Po = 75mW  
Po = 150mW  
0.2  
0.2  
0.2  
%
%
%
Gv  
Gv  
Ri  
Closed Loop Voltage Gain  
Channel Balance  
f = 1kHz  
36  
39  
41  
dB  
dB  
kΩ  
± 1  
Input Resistance  
f = 1kHz  
100  
eN  
Total Input Noise  
Rs = 10kB = Curve A  
B = 22Hz to 22kHz  
2
2.5  
µV  
µV  
SVR  
Cs  
Supply Voltage Rejection  
Channel Separation  
f = 100Hz, C1 = C2 = 100µF  
24  
30  
50  
dB  
dB  
f = 1kHz  
BRIDGE (test circuit of Figure 2)  
Vs  
Id  
Supply Voltage  
1.8  
15  
9
V
Quiescent Drain Current  
RL = ∞  
6
mA  
mV  
Vos  
Output Offset Voltage  
(between the outputs)  
RL = 8Ω  
± 50  
Ib  
Input Bias Current  
100  
nA  
Po  
Output Power (f = 1kHz, d = 10%)  
mW  
RL = 32Ω  
VS = 9V  
VS = 6V  
VS = 4.5V  
VS = 3V  
VS = 2V  
VS = 9V  
VS = 6V  
VS = 3V  
VS = 6V  
VS = 4.5V  
VS = 3V  
VS = 4.5V  
VS = 3V  
VS = 2V  
1000  
400  
200  
65  
320  
50  
8
RL = 16Ω  
RL = 8Ω  
RL = 4Ω  
2000  
800  
120  
1350  
700  
220  
1000  
350  
80  
900  
200  
d
Distortion  
Po = 0.5W, RL = 8, f = 1kHz  
f = 1kHz  
0.2  
39  
%
Gv  
Ri  
eN  
Closed Loop Voltage Gain  
Input Resistance  
Total Input Noise  
dB  
kΩ  
f = 1kHz  
100  
Rs = 10kB = Curve A  
2.5  
3
µV  
µV  
B = 22Hz to 22kHz  
SVR  
B
Supply Voltage Rejection  
Power Bandwidth (–3dB)  
f = 100Hz  
40  
dB  
RL = 8, Po = 1W  
120  
kHz  
3/11  
TDA2822M  
Figure 1 : Test Circuit (Stereo)  
Figure 2 : Test Circuit (Bridge)  
Figure 3 : P.C. Board and Components Layout  
Figure 4 : P.C. Board and Components Layout  
of the Circuit of Figure 1  
of the Circuit of Figure 2  
4/11  
TDA2822M  
Figure 5 : Quiescent Current versus  
Figure 6 : Supply Voltage Rejection versus  
Supply Voltage  
Frequency  
Figure 7 : Output Power versus Supply Voltage  
Figure 8 : Distorsion versus Output Power  
(THD = 10%, f = 1kHz Stereo)  
(Stereo)  
Figure 9 : Distorsion versus Output Power  
Figure 10 : Output Power versus Supply Voltage  
(Stereo)  
(Bridge)  
5/11  
TDA2822M  
Figure 11 : Distorsion versus Output Power  
Figure 12 : Total Power Dissipation versus  
(Bridge)  
Output Power (Bridge)  
Figure 13 : Total Power Dissipation versus  
Figure 14 : Total Power Dissipation versus  
Output Power (Bridge)  
Output Power (Bridge)  
Figure 15 : Total Power Dissipation versus  
Output Power (Bridge)  
6/11  
TDA2822M  
Figure 16 : Typical Application in Portable Players  
Figure 17 : Application in Portable Radio Receivers  
7/11  
TDA2822M  
Figure 18 : Portable Radio Cassette Players  
Type  
TDA 7220  
TDA 7211A  
TEA 1330  
TDA 7282  
TDA 2822M  
Supply Voltage  
1.5 V to 6 V  
1.2 V to 6 V  
3 V to 15 V  
1.5 V to 6 V  
1.8 V to 15 V  
Figure 19 : Portable Stereo Radios  
Type  
Supply Voltage  
TDA 7220  
TDA 7211A  
TEA 1330  
TDA 2822M  
1.5 V to 6 V  
1.2 V to 6 V  
3 V to 15 V  
1.8 V to 15 V  
Figure 20 : Low Cost Application in Portable Players (using only one 100µF output capacitor)  
8/11  
TDA2822M  
Figure 21 : 3V Stereo Cassette Player with Motot Speed Control  
9/11  
TDA2822M  
MINIDIP PACKAGE MECHANICAL DATA  
mm  
inch  
TYP.  
0.131  
DIM.  
MIN.  
TYP.  
MAX.  
MIN.  
MAX.  
A
a1  
B
3.32  
0.51  
1.15  
0.020  
0.045  
0.014  
0.008  
1.65  
0.55  
0.065  
0.022  
0.012  
0.430  
0.384  
b
0.356  
0.204  
b1  
D
E
0.304  
10.92  
9.75  
7.95  
0.313  
e
2.54  
7.62  
7.62  
0.100  
0.300  
0.300  
e3  
e4  
F
6.6  
0.260  
0.200  
0.150  
0.060  
I
5.08  
3.81  
1.52  
L
3.18  
0.125  
Z
10/11  
TDA2822M  
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility  
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result  
from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.  
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all  
information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life  
support devices or systems without express written approval of SGS-THOMSON Microelectronics.  
1994 SGS-THOMSON Microelectronics - All Rights Reserved  
SGS-THOMSON Microelectronics GROUP OF COMPANIES  
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singa-  
pore - Spain - Sweden - Switzerland - Taiwan - Thaliand - United Kingdom - U.S.A.  
11/11  

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