TEA1504 [NXP]
GreenChip SMPS control IC; 的GreenChip开关电源控制IC
| 型号： | TEA1504 |
| 厂家： | 
NXP |
| 描述： | GreenChip SMPS control IC |
| 文件： | 总20页 (文件大小：115K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
DATA SHEET
TEA1504
GreenChip SMPS control IC
Preliminary specification
1999 Dec 07
Supersedes data of 1998 Mar 17
File under Integrated Circuits, IC11
Philips Semiconductors
Preliminary specification
GreenChip SMPS control IC
TEA1504
FEATURES
GENERAL DESCRIPTION
Distinctive features
The GreenChip TEA1504 is intended for off-line
90 to 276 V (AC) power supply applications. It is one of a
family of high voltage ICs integrating both analog and
digital circuit functions for controlling a switched mode
power supply (SMPS). Its functions include integrated high
voltage start-up current source, voltage Pulse Width Mode
(PWM) control, 5% accurate oscillator, band-gap derived
reference voltages, comprehensive fault protection and
leading edge blanking. Its high level of integration allows
power supplies to be cost effective, compact, lightweight,
highly efficient, more reliable, and simple to design.
Efficient green features permit very low power operation
modes, and an innovative on/off function allows an
expensive mains switch to be replaced with a low-cost
functional switch.
• High level of integration reduces the number of
components by up to 50 compared to power supply
using discrete components
• On/off functional switch replaces expensive mains
switch
• Direct off-line operation (90 to 276 V AC)
• 5% accurate on-chip oscillator.
Green features
• Low power consumption in off-mode (<100 mW)
• Fast and efficient on-chip start-up current source
• Burst mode standby (<2 W) for overall improved system
efficiency
THE GREENCHIP FAMILY
• Low power operation mode with lower frequency
reduces switching losses
The GreenChip family of ICs are fully integrated with
most common PWM functions such as error amplifier,
oscillator, bias current generator and band-gap based
reference voltage circuits. The high level of integration
allows easy and cost effective power supply design.
The ICs are made by a Philips proprietary high voltage
BCDMOS process which produces low voltage circuit
devices with inputs that are able to withstand up to 720 V.
• Low Overcurrent Protection (OCP) level.
Protection features
• Demagnetization protection
• Cycle-by-cycle current limitation with programmable
current trip level
• Overvoltage protection
• Overtemperature protection
• Safe-restart mode with reduced power for system fault
conditions.
Highly versatile
• Usable in buck and flyback topology
• Interfaces both primary and secondary side feedback.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
DESCRIPTION
plastic dual in-line package; 14 leads (300 mil)
VERSION
TEA1504
DIP14
SOT27-1
1999 Dec 07
2
Philips Semiconductors
Preliminary specification
GreenChip SMPS control IC
TEA1504
BLOCK DIAGRAM
V
V
i
REF
8
aux
6
1
V
START-UP
aux
CURRENT SOURCE
MANAGEMENT
on/off
TEA1504
1 kΩ
14
OOB
5.5 V
burst mode
stand-by
6 Ω
6 Ω
7
4
R
S
DS
OVER
TEMPERATURE
PROTECTION
Q
DRIVER
driver
stage
9
CTRL
PULSE WIDTH
MODULATOR
SAMPLE
AND
SAMPLE
AND
OVER CURRENT
PROTECTION
HOLD1
HOLD2
inverting
error
amplifier
comparator
5
LEADING EDGE
BLANKING
I
sense
13
DEM
DEMAGNETIZATION
MANAGEMENT
OSCILLATOR
FREQUENCY
CONTROL
duty cycle limiting
signal
NEGATIVE
CLAMP
11
2
3
10
n.c.
12
n.c.
MGS569
GND
HVS
n.c.
Fig.1 Block diagram.
1999 Dec 07
3
Philips Semiconductors
Preliminary specification
GreenChip SMPS control IC
TEA1504
PINNING
SYMBOL PIN
DESCRIPTION
Vi
1
start-up current source input;
connects to MOSFET Drain supply
HVS
2
3
4
high voltage safety spacer
not connected
n.c.
handbook, halfpage
DRIVER
driver output; connects to Gate of
power MOSFET
V
1
2
3
4
5
6
7
14
13
12
11
10
9
OOB
DEM
n.c.
i
HVS
n.c.
Isense
Vaux
5
6
current sense input; connects to
current sense resistor
IC supply; connects to supply
capacitor
DRIVER
GND
n.c.
TEA1504
I
sense
DS
7
8
internal driver supply
V
CTRL
REF
aux
REF
reference input; connects to
reference resistor for setting internal
reference currents
8
DS
MGS570
CTRL
n.c.
9
duty cycle control input
10 not connected
11 ground
GND
n.c.
12 not connected
13 demagnetization signal input
DEM
OOB
14 burst mode standby on/off control
signal input
Fig.2 Pin configuration.
FUNCTIONAL DESCRIPTION
Start-up current source and Vaux management
Negligible power is dissipated by the TEA1504 after
start-up, due to its fast and efficient start-up circuit. It has
an accurate saw tooth oscillator whose output signal is
compared with a voltage feedback control circuit to
generate a pulse width modulated signal for driving the
Gate of an external power MOSFET. The number of
external components required for regulating the supply are
reduced due to an innovative design implementing both
primary and secondary side regulation. Overvoltage,
overcurrent, overtemperature and demagnetization
features protect the IC from system fault conditions.
Off-mode, Burst mode standby, and a Low power
operation mode are advanced features that greatly
enhance the efficiency of the overall system. Off-mode,
reduces the power consumption of the IC below 100 mW.
Burst mode standby, reduces the power consumption of
the system to below 2 W. Low power operation mode,
reduces the operating frequency of the system during low
load conditions to reduce switching losses.
A versatile on-chip start-up current source eliminates the
need for an external, highly dissipative trickle-charge
circuit. See Figs 1 and 3. The start-up current source is
supplied by rectified mains power via Vi (pin 1). It supplies
charging current to the IC supply capacitor (Caux) and also
supplies current to the IC control circuit
(Vaux management) (see Istart(Vaux)L and Istart(Vaux)H in
Chapter “Characteristics”). Once Caux is charged to its
start-up voltage level (11 V), the oscillator starts oscillating
and the IC starts switching the power MOSFET. Power is
then supplied to the load via the secondary winding. Caux
is also supplied by an auxiliary winding on the primary side
which is coupled to the secondary winding supplying the
output capacitor (Co). As the voltage on Co increases and
approaches its nominal value, Caux is re-supplied with
current by the auxiliary winding (see Fig.4). For correct
operation, it is important that Caux starts to be re-supplied
with current by the auxiliary winding before its voltage
drops to the Under Voltage Lockout (UVLO) level of
8.05 V.
1999 Dec 07
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Philips Semiconductors
Preliminary specification
GreenChip SMPS control IC
TEA1504
The start-up current source also helps to implement the
safe-restart or ‘hiccup’ mode required during system fault
conditions: output short-circuit, output open-circuit, and
overvoltage. Under these fault conditions, the IC inhibits
the normal operation of the system and stops delivering
output power. If the output is short-circuited, Caux is no
longer supplied by the auxiliary winding and its voltage
drops to the UVLO level. If the output open-circuits, the
output voltage rises to the Overvoltage Protection (OVP)
level. The IC detects this state and stops switching the
power MOSFET, which stops re-supplying current to Caux
whose voltage starts to drop. Once the voltage on Caux
drops to the UVLO level, the start-up current source
re-activates and charges Caux to the start-up level, and the
system begins the safe-restart mode cycle, similar to the
normal start-up cycle.
Figure 5 shows the relevant waveforms during safe-restart
mode. To achieve a low ‘hiccup’ duty cycle, the current
charging Caux during the safe-restart mode is lower than it
is during normal start-up (see Irestart(Vaux) and Istart(Vaux)H in
Chapter “Characteristics”). This reduces the risk, during
an output short-circuit condition, of any physical damage
being caused to output secondary winding devices, and of
any breach of safety. The start-up current source is also
important for implementing burst mode standby, explained
in Section “Burst mode standby” (see Irestart(Vaux) in
Chapter “Characteristics”).
V
mains
V
o
C
o
(1)
V
OOB
DEM
n.c.
i
14
1
2
3
4
5
6
7
HVS
13
n.c.
12
power
MOSFET
GND
n.c.
DRIVER
11 TEA1504
I
sense
10
9
V
CTRL
REF
aux
DS
8
auxiliary
winding
R
C
CTRL
R
C
R
DEM
REF
aux
sense
MGS571
(1) Secondary earthing points are isolated from their primary earthing points.
Fig.3 Typical flyback application.
5
1999 Dec 07
Philips Semiconductors
Preliminary specification
GreenChip SMPS control IC
TEA1504
Reference
All reference voltages are derived from a temperature
compensated, on-chip, band-gap. The band-gap
reference voltage is also used with an external
resistor (RREF) connected to REF (pin 8), to generate
accurate, temperature independent, IC internal
(2)
11 V
V
Vaux
(4)
8.05 V
(3)
(1)
V
bias currents. IREF
=
REF[A ] .
-------------
RREF
RREF also affects the frequency of the oscillator (see
Section “Oscillator”).
t
V
o
Sample-and-hold
The TEA1504 uses voltage feedback with an innovative
sample-and-hold circuit to regulate the output voltage.
In a primary feedback configuration, the sample-and-hold
t
circuit samples the current into DEM (pin 13), fed by RDEM
which relates to the output voltage (Vo) during the period
that current flows in the secondary winding.
,
V
G
switching
(power
MOSFET)
off
aVo = IREF × RDEM + Vclamp(DEM)(pos).
t
MGS572
Vclamp(DEM)(pos) is specified in Chapter “Characteristics”;
‘a’ = a constant determined by the turns ratio of the
transformer.
(1) Start-up current source charges Caux
(2) Start-up voltage.
.
The sampled current is held in the external capacitor
(CCTRL). The PWM uses the voltage on CCTRL to set the
operating duty cycle of the power MOSFET. When the
TEA1504 is used in a secondary feedback configuration,
the feedback voltage is provided by an opto-coupler.
(3) UVLO level.
(4) Auxiliary winding charges Caux
.
Fig.4 Normal start-up waveforms.
MGS647
V
Vaux
fault condition
(1)
normal operation
t
t
V
G
(power
MOSFET)
switching
off
(1) Start-up current source charges Caux
.
Fig.5 Safe-restart mode waveforms.
6
1999 Dec 07
Philips Semiconductors
Preliminary specification
GreenChip SMPS control IC
TEA1504
Pulse width modulator
A low driver source current has been chosen in order to
limit the ∆V/∆t at switch-on. This reduces Electro Magnetic
Interference (EMI) and also the current spike across
The PWM comprises an inverting error amplifier and a
comparator (see Fig.1) which drives the power MOSFET
with a duty cycle that is inversely proportional to the
voltage at CTRL (pin 9). A signal from the oscillator sets a
latch that turns on the power MOSFET. The latch is then
reset either by the signal from the PWM or by a duty cycle
limiting signal from the oscillator. The latch stops the
power MOSFET from being switched incorrectly if the
PWM output signal becomes unstable. The maximum duty
cycle is internally set to 80%. The IC switching signals
during normal operation are shown in Fig.7.
Rsense
.
Demagnetization protection
The demagnetization protection feature ensures
discontinuous conduction of the power supply, simplifying
the design of feedback control and giving a faster transient
response. It protects against saturation of the
transformer/inductor and also protects the power supply
components against excessive stresses at start-up, when
all energy storage components are completely discharged.
During a system output short-circuit fault condition, it
provides cycle-by-cycle protection of the converter
configuration. The demagnetization resistor (RDEM) value
can be calculated using the formula given in Section
“Sample-and-hold”.
Oscillator
The oscillator determines the switching duty cycle.
Its ramp signal voltage is compared to the output of the
error amplifier by the PWM. The fully integrated oscillator
circuit works by charging and discharging an internal
capacitor between two voltage levels to create a sawtooth
waveform with a rising edge that is 80% of the oscillator
period (high frequency mode). This ratio sets a maximum
switching duty cycle of 80% for the IC. The accuracy of the
oscillator frequency is internally set to 5%. Its frequency
can be adjusted between 50 and 100 kHz by changing the
value of RREF. This gives the power supply designer
greater flexibility in the choice of system components.
The relationship between frequency and the value of RREF
is shown in Fig.6. The range of RREF values and the
frequencies of foscL and foscH are specified in Chapter
“Characteristics”.
MGS573
110
55
f
handbook, halfpage
f
oscH
oscL
(kHz)
(kHz)
90
45
70
50
35
25
15
(1)
(2)
Multi frequency control
When the power supply operates at or below 1⁄9 of its peak
power, the IC changes to low power operation mode.
This lowers the frequency of the oscillator to reduce the
power supply switching losses. The ratio between the high
and the low oscillator frequency is maintained at 1 : 2.5
(see foscL in Chapter “Characteristics”). An innovative
design ensures that the transfer from high-to-low
frequency and vice versa does not effect output voltage
regulation.
30
10
20
30
40
R
(kΩ)
REF
(1) High frequency mode.
(2) Low frequency mode.
Fig.6 Frequency as function of RREF value.
Gate driver
The driver circuit to the Gate of the power MOSFET has a
totem-pole output stage that has current sourcing
capability of 120 mA and a current sink capability of
550 mA. This permits fast turn-on and turn-off of the power
MOSFET for efficient operation. This circuit design allows
the power supply designer to control the source and sink
currents of the Gate driver circuit with a minimum number
of external components.
Negative clamp
The negative clamp circuit ensures correct operation of
the IC by preventing the voltage at DEM (pin 13) dropping
below −0.45 V, during the period when the power
MOSFET turns on and the auxiliary winding voltage goes
negative.
1999 Dec 07
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Philips Semiconductors
Preliminary specification
GreenChip SMPS control IC
TEA1504
V
Vi
V
Vi
V
D
(power
MOSFET)
V
o
V
Vaux
V
G
(power
MOSFET)
I
Vaux
0
(1)
V
OOB
0
V
µC
start-up
sequence
normal
operation
overvoltage
protection
output short
circuit
burst mode stand-by
normal
operation
MGS574
(1) All negative currents flow out of the IC.
Fig.7 Typical waveforms.
8
1999 Dec 07
Philips Semiconductors
Preliminary specification
GreenChip SMPS control IC
TEA1504
Overvoltage protection
Figure 8 shows a flyback converter configured to use the
on/off mode. Switch S1 connects OOB (pin 14) to either a
voltage close to ground, or to a voltage typically greater
than 2.5 V. The OOB voltage is detected internally by
the IC. If VOOB is low, the IC enters the off-mode,
consuming a current of typically 350 µA (see Ioff(Vi) in
Chapter “Characteristics”). If VOOB is typically 2.5 V,
the IC enters the start-up sequence and begins normal
operation (see Vth(on/off) in Chapter “Characteristics”).
Figure 9 shows a ‘Mains Under Voltage Lock
The OVP circuit senses the voltage at Vaux (pin 6). If the
output voltage exceeds the preset voltage limit, the OVP
circuit turns off the power MOSFET preventing the
re-supply of current to Caux. VVaux drops to the UVLO level
and the system enters the low dissipation safe-restart
mode described earlier. The system recovers from the
safe-restart mode only if the OVP condition is removed.
Overcurrent protection
Out’ (MUVLO) circuit using 3 resistors. Assuming that R3
is chosen to be a very high value, the IC starts operating
Cycle-by-cycle OCP is provided by sensing the voltage
on Rsense. The voltage on Rsense relates to the amplitude
of the primary current, and is internally compared with a
reference voltage using a high speed comparator.
The comparator threshold voltage is specified as Vth(Isense)
in the Chapter “Characteristics”.
R1
R2
when: Vmains
≈
× V OOB[V] ; where R1 >> R2.
-------
This ensures that the power supply only starts working
above a Vmains of 80 V for example. The bleeder current
through R1 should be low (e.g. 30 µA at 300 V).
The maximum primary (protection) current is therefore:
V
Iprot
=
th(Isense)[A ] .
Burst mode standby
--------------------------
Rsense
OOB (pin 14) is also used to implement the burst mode
standby. In burst mode standby, the power supply enters
a special low dissipation state where it typically consumes
less than 2 W of power. Figure 9 shows a flyback
converter using the burst mode standby function.
The system enters burst mode standby when the
microcontroller closes switches S2 and S3 on the
secondary side. Switch S2 connects the output secondary
winding to microcontroller capacitor (CµC) bypassing Co.
When the voltage on (CµC) exceeds the zener voltage, the
opto-coupler is activated sending a signal to OOB.
In response to this signal, the IC stops switching and
enters a ‘hiccup’ mode. Figure 7 shows the burst-mode
standby signals. The hiccup mode during burst mode
standby operation differs from the hiccup mode in
safe-restart mode during a system fault condition.
For safe-restart mode, the power has to be reduced.
Burst mode standby requires sufficient power to supply the
microcontroller. To prevent transformer rattle, the
transformer peak current is reduced by a factor of 3.
Burst mode standby operation continues until the
microcontroller opens switches S2 and S3. The system
then enters the start-up sequence and begins normal
switching behaviour.
If the power MOSFET current exceeds the current limit, the
comparator changes state, turning off the power MOSFET.
The power MOSFET is typically turned off in 210 ns
(see td(Isense-DRIVER) in Chapter “Characteristics”).
Having Rsense off-chip allows the power supply designer
greater flexibility for programming the OCP threshold level.
It also reduces the risk of an overcurrent condition being
sensed incorrectly. When the power MOSFET turns on,
the discharge current from the demagnetization ∆V/∆t
limiting capacitor, flows through the power MOSFET
instead of through Rsense
.
The Leading Edge Blanking circuit inhibits the operation of
the OCP comparator for a short period when the power
MOSFET turns on (see tblank(le) in Chapter
“Characteristics”). This ensures that the power MOSFET is
not turned off prematurely due to the false sensing of an
overcurrent condition caused by current spikes produced
by the discharge of primary-side snubber and parasitic
capacitances. The tblank(le) is not fixed and tracks the
oscillator frequency.
Overtemperature protection
Overtemperature protection is provided by an analog
temperature sensing circuit which turns off the power
MOSFET when the temperature exceeds typically 140 °C.
On/off mode
The on/off mode allows an expensive mains switch to be
replaced by an in-expensive functional switch.
1999 Dec 07
9
Philips Semiconductors
Preliminary specification
GreenChip SMPS control IC
TEA1504
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); note 1.
SYMBOL
PARAMETER
DC voltage on pin Vi
CONDITIONS
MIN.
MAX.
720
UNIT
Vi
measured at 200 µA
−
V
V
VOOB
IDEM
VCTRL
Vlsense
IREF
voltage on pin OOB
current on pin DEM
voltage on pin CTRL
voltage on pin Isense
current on pin REF
voltage on pin Vaux
voltage on pin DS
junction temperature
storage temperature
electrostatic discharge
human body model
machine model
−0.3
−
+14
±1
mA
V
−0.3
−0.3
−
+5
+5
V
−1
mA
V
VVaux
VDS
−0.3
−0.3
−10
−40
+18
+18
+140
+150
V
Tj
°C
°C
Tstg
Vesd
class 1
note 2
note 3
−
−
1250
200
V
V
Notes
1. All voltages are referenced to GND (pin 11).
2. Equivalent to discharging a 100 pF capacitor through a 1.5 kΩ series resistor.
3. Equivalent to discharging a 200 pF capacitor through a 0.75 mH coil.
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
VALUE
70
UNIT
thermal resistance from junction to ambient
K/W
QUALITY SPECIFICATION
Quality specification “SNW-FQ-611 part E” is applicable.
1999 Dec 07
10
Philips Semiconductors
Preliminary specification
GreenChip SMPS control IC
TEA1504
CHARACTERISTICS
Tj = −10 to +110 °C; VVi = 300 V; RREF = 24.9 kΩ (0.1%); VVaux = 8.6 to 13 V. Positive currents flow into the IC.
Negative currents flow out of the IC. All voltages are referenced to GND (pin 11).
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Start-up current source and Vaux management (pins 1 and 6)
Vstart(Vi)(min)
Vstart(Vaux)
VUVLO(Vaux)
Vhys(Vaux)
Ii(Vi)
minimum start-up voltage on Vi
start-up voltage on Vaux
100
10.4
7.4
−
−
V
11
11.6
V
under-voltage lockout on Vaux
hysteresis voltage on Vaux
input current on Vi
8.05 8.6
V
V
start(Vaux) − VUVLO(Vaux)
2.60
20
2.95 3.30
V
normal operation
60
100
550
µA
µA
Ioff(Vi)
off mode current on Vi
VOOB < 1.95 V
150
350
Istart(Vaux)L
Istart(Vaux)H
lsup(Vaux)(oper)
Irestart(Vaux)
low start-up current on Vaux
high start-up current on Vaux
operating supply current on Vaux
restart current on Vaux
0 V < VVaux < 0.73 V
0.5 V < VVaux < Vstart(Vaux)
no load on DRIVER (pin 4)
in OCP mode
−270 −230 −190 µA
−5.0
−3.0 −1.0
mA
mA
3.5
3.85 4.2
−600 −530 −460 µA
in burst standby mode
lVaux = 5 mA
−2.5
−2.1 −1.7
18
mA
V
Vclamp(Vaux)
clamping voltage on Vaux
15
−
Reference input (pin 8)
Vi(REF)
reference input voltage
2.37
16.9
2.47 2.57
24.9 33.2
V
RREF(oper)
operating reference resistor
kΩ
Oscillator
foscL
foscH
δmax
oscillator low frequency
oscillator high frequency
maximum duty cycle
low power operation mode
normal mode
27.5
66
29
70
80
30.5
74
kHz
kHz
%
f = foscH
78
82
foscH/foscL
ratio between oscillator high and low
frequencies
2.30
2.45 2.60
∆foscH
oscillator high frequency range
with changing RREF
VDEM decreasing
50
70
100
kHz
Demagnetization management (pin 13)
Vth(DEM)
demagnetization comparator
threshold voltage on DEM
50
65
500
−
80
mV
ns
tP(DEM-BUF)
propagation delay from DEM to output
buffer
300
700
Ii(bias)(DEM)
input bias current on DEM
VDEM = 65 mV
−0.5(1)
−0.1(1) µA
Vclamp(DEM)(neg) negative clamp voltage level on DEM IDEM = −500 µA
−0.45 −0.35 0
V
V
Vclamp(DEM)(pos) positive clamp voltage level on DEM
IDEM = 100 µA
lREF = 100 µA
2.3
2.6
2.9
Sample-and-hold (pin 13)
Ictrl(DEM)(oper)
Ith(sample)
operating control current on DEM
90
78
100
83
110
88
µA
sample threshold current as % of
Ictrl(DEM)
%
tP(DEM-COMP)
propagation delay from DEM to
current comparator
∆VDEM/∆t positive (500 V/µs) 170
∆VDEM/∆t negative (10 V/µs) 20
450
90
730
160
ns
ns
1999 Dec 07
11
Philips Semiconductors
Preliminary specification
GreenChip SMPS control IC
TEA1504
SYMBOL
Overvoltage protection (pin 6)
VOVP(max) maximum OVP voltage level
td(OVP) OVP delay time
Isense Overcurrent protection and low power operation mode (pin 5)
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
fixed maximum level
14.0
350
14.7 15.5
V
550
800
ns
tblank(le)
leading edge blanking time
RREF = 0.7 × RREF(nominal)
180
240
415
0.46
150
260
340
470
340
440
560
ns
ns
ns
V
RREF = RREF(nominal)
RREF = 1.3 × RREF(nominal)
Vth(Isense)
comparator threshold voltage on Isense at maximum current
0.49 0.53
td(Isense-DRIVER) delay from Isense to DRIVER
(MOSFET off)
at ∆V/∆t = 200 mV/µs
210
270
ns
Vth(lpom)
threshold voltage for switch-over to
low power operation mode
155
165
175
mV
Duty cycle control (pin 9)
∆δ/∆VCTRL
variation of duty cycle with voltage on foscH
95
85
50
75
40
%/V
%/V
V
CTRL
foscL
60
VCTRL(min)
VCTRL(max)
IL(CTRL)
minimum control voltage on CTRL
maximum control voltage on CTRL
input/output leakage current on CTRL
2.00
2.90
−1(1)
2.15 2.30
3.05 3.20
V
−
+1(1)
µA
Overtemperature protection
Tth(over)
threshold overtemperature
130
140
155
°C
On/off mode and burst mode standby (pin 14)
Vth(on/off)
switch-over to on/off mode threshold
voltage
2.3
2.5
−
2.8
7.5
5.5
V
V
V
Vth(burst)(on)
Vth(burst)(off)
burst mode standby active threshold
voltage
6.5
burst mode standby inactive threshold
voltage
−
−
IO(OOB)
output current on OOB
VOOB > 400 mV
−0.5(1)
−
−0.1(1) µA
DRIVER (pin 4)
RDSonH
Drain/Source on-state resistance
(output going high)
VVaux = 8.5 V and
VDRIVER = 6.5 V
15
3
22
6
50
15
Ω
Ω
RDSonL
Isource
Isink
Drain/Source on-state resistance
(output going low)
VVaux = 8.5 V and
VDRIVER = 2 V
source current of MOSFET
VVaux = 8.5 V and
VDRIVER = 2 V
−280 −120 −100 mA
sink current of MOSFET
VVaux = 8.5 V and
VDRIVER = 2 V
150
400
250
550
500
900
mA
mA
VVaux = 8.5 V and
VDRIVER = 8.5 V
Note
1. Guaranteed by design.
1999 Dec 07
12
Philips Semiconductors
Preliminary specification
GreenChip SMPS control IC
TEA1504
APPLICATION INFORMATION
A capacitor (CCTRL) having a low value of typically
0.2 to 2 nF is used by the internal sample-and-hold circuit
to regulate the primary feedback circuit. CCTRL is
connected to CTRL (pin 9). This pin is also the input for
the opto-coupler signal in a secondary sensing
A converter using the TEA1504 is usually either a flyback
or a buck converter that comprises EMI filter, full bridge
rectifier, filter capacitor, transformer, output stage(s) and
some snubber circuitry. Depending upon the type of
feedback used, either an auxiliary winding (primary
regulation) or an opto-coupler (secondary regulation) is
used. Very few external components are used due to the
configuration. Pin 11 is connected to ground. The primary
side auxiliary winding is connected by resistor (RDEM
)
to DEM (pin 13). The DEM input is also used for primary
side regulation. Input OOB (pin 14) implements both the
on/off and the burst mode standby functions. The supply
connected to Vi (pin 1) is used by the internal start-up
current source for charging capacitor Caux during start-up
and safe-restart modes.
high level of chip integration. A sense resistor (Rsense
)
converts the primary current into a voltage at Isense (pin 5).
The IC uses this voltage to set the peak current of the
converter. An auxiliary winding supplies capacitor Caux
which buffers the IC’s internal supply. The auxiliary
winding is also used as part of the primary output voltage
regulation circuit. A resistor (RREF) determines the IC’s
reference currents into REF (pin 8).
For additional information also see: ‘application note
AN98011: “200 W SMPS with TEA1504”’.
V
mains
V
o
C
o
output on/off
mode switch
(1)
V
OOB
DEM
n.c.
i
14
1
2
3
4
5
6
7
S1
HVS
13
n.c.
12
power
MOSFET
GND
n.c.
DRIVER
11 TEA1504
I
sense
10
9
R
CTRL
V
CTRL
REF
aux
(1)
DS
8
auxiliary
R
R
R
C
DEM
REF
aux
sense
winding
MGS575
(1) Secondary earthing points are isolated from their primary earthing points.
Fig.8 Typical flyback configuration with secondary sensing and on/off feature.
1999 Dec 07
13
Philips Semiconductors
Preliminary specification
GreenChip SMPS control IC
TEA1504
V
mains
V
o
R1
R2
C
o
S2
(1)
S1
V
OOB
DEM
n.c.
i
14
1
2
3
4
5
6
7
output on/off
mode switch
V
µC
HVS
n.c.
R3
13
12
power
MOSFET
GND
n.c.
DRIVER
11 TEA1504
C
µC
I
sense
10
9
V
R4
CTRL
REF
aux
S3
DS
R
CTRL
8
(1)
burst-mode
stand-by on/off
from
auxiliary
winding
R
C
R
C
R
DEM
CTRL
REF
aux
sense
microcontroller
MGS576
(1) Secondary earthing points are isolated from their primary earthing points.
Fig.9 Flyback configuration with secondary sensing using the burst mode standby and on/off feature.
1999 Dec 07
14
Philips Semiconductors
Preliminary specification
GreenChip SMPS control IC
TEA1504
V
mains
V
o
C
o
output on/off
mode switch
V
OOB
DEM
n.c.
i
14
1
2
3
4
5
6
7
S1
HVS
13
n.c.
12
power
MOSFET
GND
n.c.
DRIVER
11 TEA1504
I
sense
10
9
V
CTRL
REF
aux
DS
8
R
R
C
R
DEM
REF
aux
sense
R
CTRL
MGS577
Fig.10 Typical buck configuration with secondary sensing.
1999 Dec 07
15
Philips Semiconductors
Preliminary specification
GreenChip SMPS control IC
TEA1504
V
mains
V
o
C
o
output on/off
mode switch
V
OOB
DEM
n.c.
i
14
1
2
3
4
5
6
7
S1
HVS
13
n.c.
12
power
MOSFET
GND
n.c.
DRIVER
11 TEA1504
I
sense
10
9
V
CTRL
REF
aux
DS
8
R
C
CTRL
R
C
R
DEM
REF
aux
sense
MGS578
Fig.11 Typical buck configuration with primary sensing.
1999 Dec 07
16
Philips Semiconductors
Preliminary specification
GreenChip SMPS control IC
TEA1504
PACKAGE OUTLINE
DIP14: plastic dual in-line package; 14 leads (300 mil)
SOT27-1
D
M
E
A
2
A
A
1
L
c
e
w M
Z
b
1
(e )
1
b
M
H
14
8
pin 1 index
E
1
7
0
5
10 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
(1)
Z
A
A
A
2
(1)
(1)
1
UNIT
mm
b
b
c
D
E
e
e
L
M
M
H
w
1
1
E
max.
min.
max.
max.
1.73
1.13
0.53
0.38
0.36
0.23
19.50
18.55
6.48
6.20
3.60
3.05
8.25
7.80
10.0
8.3
4.2
0.51
3.2
2.54
0.10
7.62
0.30
0.254
0.01
2.2
0.068
0.044
0.021
0.015
0.014
0.009
0.77
0.73
0.26
0.24
0.14
0.12
0.32
0.31
0.39
0.33
inches
0.17
0.020
0.13
0.087
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
92-11-17
95-03-11
SOT27-1
050G04
MO-001AA
1999 Dec 07
17
Philips Semiconductors
Preliminary specification
GreenChip SMPS control IC
TEA1504
SOLDERING
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (Tstg(max)). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.
Introduction to soldering through-hole mount
packages
This text gives a brief insight to wave, dip and manual
soldering. A more in-depth account of soldering ICs can be
found in our “Data Handbook IC26; Integrated Circuit
Packages” (document order number 9398 652 90011).
Manual soldering
Wave soldering is the preferred method for mounting of
through-hole mount IC packages on a printed-circuit
board.
Apply the soldering iron (24 V or less) to the lead(s) of the
package, either below the seating plane or not more than
2 mm above it. If the temperature of the soldering iron bit
is less than 300 °C it may remain in contact for up to
10 seconds. If the bit temperature is between
Soldering by dipping or by solder wave
300 and 400 °C, contact may be up to 5 seconds.
The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joints for more than 5 seconds.
The total contact time of successive solder waves must not
exceed 5 seconds.
Suitability of through-hole mount IC packages for dipping and wave soldering methods
SOLDERING METHOD
PACKAGE
DIPPING
WAVE
DBS, DIP, HDIP, SDIP, SIL
suitable
suitable(1)
Note
1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.
1999 Dec 07
18
Philips Semiconductors
Preliminary specification
GreenChip SMPS control IC
TEA1504
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Dec 07
19
Philips Semiconductors – a worldwide company
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Slovenia: see Italy
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,
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For all other countries apply to: Philips Semiconductors,
Internet: http://www.semiconductors.philips.com
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
68
SCA
© Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
295002/02/pp20
Date of release: 1999 Dec 07
Document order number: 9397 750 05331
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