TEA1208T [NXP]
High efficiency DC/DC converter; 高效率DC / DC转换器型号: | TEA1208T |
厂家: | NXP |
描述: | High efficiency DC/DC converter |
文件: | 总20页 (文件大小:88K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
DATA SHEET
TEA1208T
High efficiency DC/DC converter
Product specification
2002 Nov 15
Philips Semiconductors
Product specification
High efficiency DC/DC converter
TEA1208T
FEATURES
• Supply voltage source for low-voltage chip sets
• Portable computers
• Battery backup supplies
• Cameras.
• Fully integrated DC/DC converter circuit
• Up-or-down conversion
• Start-up from 1.85 V input voltage
• Adjustable output voltage
GENERAL DESCRIPTION
• High efficiency over a wide range of loads
The TEA1208T is a fully integrated DC/DC converter.
Efficient, compact and dynamic power conversion is
achieved using special digital control concepts - Pulse
Width Modulation (PWM) and Pulse Frequency
Modulation (PFM), integrated low RDSon CMOS power
switches with low parasitic capacitances, and fully
synchronous rectification.
• Power handling capability up to 0.42 A continuous
average current
• 275 kHz switching frequency
• Low quiescent power consumption
• External clock synchronization
• True current limit for Li-ion battery compatibility
• Up to 100% duty cycle in down conversion
• Undervoltage lockout
The device operates at a switching frequency of 275 kHz
requiring only minimum sized external components.
Deadlock is prevented by an on-chip undervoltage lockout
circuit.
• Shut-down function
• 8-pin SO package.
Efficient behaviour during short load peaks and
compatibility with Li-ion batteries is guaranteed by an
accurate current limiting function.
APPLICATIONS
• Cellular and cordless phones, Personal Digital
Assistants (PDAs) and others
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
DESCRIPTION
plastic small outline package; 8 leads; body width 3.9 mm
VERSION
TEA1208T
SO8
SOT96-1
2002 Nov 15
2
Philips Semiconductors
Product specification
High efficiency DC/DC converter
TEA1208T
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Voltage levels
UP CONVERSION; pin U/D = LOW
VI
input voltage
VI(start)
2.80
−
−
5.50
V
V
V
VO
output voltage
5.50
1.85
VI(start)
start-up input voltage
IL < 62 mA
1.40
1.60
DOWN CONVERSION; pin U/D = HIGH
VI
input voltage
2.80
1.30
−
−
5.50
5.50
V
V
VO
output voltage
GENERAL
Vfb
feedback voltage
1.19
52
1.24
65
1.29
72
V
Current levels
Iq
quiescent current on pin 3
down conversion;
VI = 3.6 V
µA
Ishdwn
ILX
current in shut-down state
maximum continuous current on pin 4
current limit deviation
−
−
2
10
µA
Tamb = 80 °C
−
0.30
A
∆Ilim
Ilim = 0.5 to 2.5 A
up conversion
down conversion
−17.5
−17.5
−
−
+17.5
+17.5
%
%
Power MOSFETs
RDSon
drain-to-source on-state resistance
N-type
P-type
0.10
0.10
0.20
0.22
0.30
0.35
Ω
Ω
Efficiency
η1
efficiency up conversion
VI = 3.6 V; VO = 4.6 V;
L1 = 10 µH
IL = 1 mA
−
−
88
95
−
−
%
%
IL = 200 mA
η2
efficiency down conversion
VI = 3.6 V; VO = 2.0 V;
L1 = 10 µH
IL = 1 mA
−
−
86
93
−
−
%
%
IL = 200 mA
Timing
fsw
switching frequency
PWM mode
220
4
275
6.5
50
330
20
−
kHz
MHz
µs
fsync
tres
synchronization clock input frequency
response time
from standby to P0(max)
−
2002 Nov 15
3
This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in
_white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in
white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ...
a
P-type POWER FET
4
2
3
LX
UPOUT/DNIN
I/V
INTERNAL
SUPPLY
CONVERTER
sense FET
START-UP
ILIM
CIRCUIT
TEA1208T
7
CONTROL LOGIC
AND
MODE GEARBOX
FB
CURRENT LIMIT
COMPARATORS
I/V
CONVERTER
N-type
POWER
FET
TEMPERATURE
PROTECTION
BAND GAP
REFERENCE
TIME
COUNTER
sense
FET
13 MHz
OSCILLATOR
SYNC
GATE
DIGITAL CONTROLLER
6
5
8
1
MCE155
GND
SYNC
SHDWN U/D
Fig.1 Block diagram.
Philips Semiconductors
Product specification
High efficiency DC/DC converter
TEA1208T
PINNING
SYMBOL
U/D
PIN
DESCRIPTION
1
up-or-down conversion
selection input; active LOW for
up conversion
handbook, halfpage
U/D
1
2
3
4
8
SHDWN
FB
ILIM
2
3
current limiting resistor
connection
ILIM
7
6
5
TEA1208T
UPOUT/DNIN
output voltage in up conversion;
input voltage in down
conversion
UPOUT/DNIN
LX
GND
SYNC
MCE154
LX
4
5
6
7
8
inductor connection
synchronization clock input
ground
SYNC
GND
FB
feedback input
Fig.2 Pin configuration.
SHDWN
shut-down input
FUNCTIONAL DESCRIPTION
Control mechanism
As soon as more load current is taken from the output the
output voltage starts to decay.
When the output voltage becomes lower than the low limit
of the window, it is corrected by extending the period of the
inductor current ramp-up time. As a result, the DC current
level is increased and normal PWM control can continue.
The output voltage (including ESR effect) is again within
the predefined window. Figure 4 depicts the spread of the
output voltage window. The absolute value is most
dependent on spread, while the actual window size is not
affected. For a given device, the output voltage will not
vary more than 2% typically.
The TEA1208T DC/DC converter is able to operate in
either PFM (discontinuous conduction) or PWM
(continuous conduction) mode. All switching actions are
completely determined by a digital control circuit which
uses the output voltage level as its control input. This
special design enables the use of a pulse width and
frequency modulation scheme, which ensures optimum
power efficiency over the complete operating range of the
converter.
When high output power is requested, the device operates
in PWM (continuous conduction) mode. This results in
minimum AC currents in the circuit components and hence
optimum efficiency, minimum costs and low EMC. In PWM
mode, the output voltage is allowed to vary between a
window represented by two predefined voltage levels.
As long as the output voltage stays within this window,
switching continues in a fixed pattern. When the output
voltage reaches a window border, the digital controller
immediately adjusts the pulse width and inserts a current
step so that the output voltage stays within the window with
higher or lower current capability. This approach enables
very fast reaction to load variations. Figure 3 shows the
converter’s response to a sudden load increase. The
upper trace shows the output voltage. The ripple on top of
the DC level is a result of the current in the output
capacitor, which changes sign twice per cycle, times the
capacitor’s internal Equivalent Series Resistance (ESR).
After each ramp-down of the inductor current, i.e. when the
ESR effect increases the output voltage, the converter
determines what to do in the next cycle.
In low output power situations, the TEA1208T will switch
over to PFM (discontinuous conduction) operating mode.
In this mode, regulation information obtained in previous
PWM operating modes is used. This results in optimum
inductor peak current levels in the PFM mode, which are
slightly larger than the inductor ripple current in the PWM
mode. As a result, the transition between PFM and PWM
mode is optimum under all circumstances. In the PFM
mode the TEA1208T regulates the output voltage to the
high window limit as shown in Fig.3.
Synchronous rectification
For optimum efficiency over the whole load range,
synchronous rectifiers inside the TEA1208T ensure that
during the whole second switching phase, all inductor
current will flow through the low-ohmic power MOSFETs.
Special circuitry is included which detects that the inductor
current reaches zero. Following this detection, the digital
controller switches off the power MOSFET and starts
regulation.
2002 Nov 15
5
Philips Semiconductors
Product specification
High efficiency DC/DC converter
TEA1208T
Start-up
Current limiters
Start-up from low input voltage in up conversion is realized
by an independent start-up oscillator, which starts
switching the N-type power MOSFET as soon as the
voltage at pin UPOUT/DNIN is measured to be sufficiently
high. The switch actions of the start-up oscillator will
increase the output voltage. As soon as the output voltage
is high enough for normal regulation, the digital control
system takes over the control of the power MOSFETs.
If the current in one of the power switches exceeds its limit
in the PWM mode, the current ramp is stopped
immediately, and the next switching phase is entered.
Current limiting is required to enable optimal use of energy
in Li-ion batteries, and to keep power conversion efficient
during temporary high loads. Furthermore, current limiting
protects the IC against overload conditions, inductor
saturation, etc. The current limiting level is set by an
external resistor.
Undervoltage lockout
External synchronization
As a result of too high a load or disconnection of the input
power source, the output voltage can drop so low that
normal regulation cannot be guaranteed. In this case, the
device switches back to start-up mode. If the output
voltage drops even further, switching stops completely.
If an external high-frequency clock is applied to the
synchronization clock input, the switching frequency in
PWM mode will be exactly that frequency divided by 22.
In the PFM mode, the switching frequency is always lower.
The quiescent current of the device increases when
external clock pulses are applied. When no external
synchronization is necessary, the synchronization clock
input must be connected to ground level.
Shut-down
When the shut-down input is made HIGH, the converter
disables both power switches reducing the power
consumption to a few microamperes.
Behaviour at input voltage exceeding the specified
range
Power switches
In general, an input voltage exceeding the specified range
is not recommended since instability may occur. There are
two exceptions:
The device has two power switches - one N-type and one
P-type power MOSFET, having a typical drain-to-source
resistance of 0.20 Ω and 0.22 Ω respectively.
The maximum average current in the power switches is
0.30 A at Tamb = 80 °C.
• Up conversion: at an input voltage higher than the target
output voltage, but up to 6 V, the converter will stop
switching and the internal P-type power MOSFET will be
conducting. The output voltage will equal the input
voltage minus some resistive voltage drop. The current
limiting function is not active.
Temperature protection
In PWM mode, the device will stop operating if the die
temperature is too high (typically 175 °C). Operation
resumes when the die temperature falls below 175 °C.
As a result, low-frequency cycling between the on and off
state will occur. Note that if the temperature of the device
approaches Tmax, the actual maximum parameter limits
may be very different from those specified.
• Down conversion: when the input voltage is lower than
the target output voltage, but higher than 2.8 V, the
P-type power MOSFET will stay conducting resulting in
an output voltage being equal to the input voltage minus
some resistive voltage drop. The current limiting
function remains active.
2002 Nov 15
6
Philips Semiconductors
Product specification
High efficiency DC/DC converter
TEA1208T
load increase
start corrective action
V
o
high window limit
low window limit
time
I
L
MGK925
time
Fig.3 Response to load increase.
maximum positive spread of V
fb
V
h
upper specification limit
2%
V
l
+4%
V
h
V
out, typ
2%
V
l
−4%
V
h
2%
lower specification limit
V
typical situation
l
maximum negative spread of V
MGR667
fb
Fig.4 Spread of location of output voltage window.
7
2002 Nov 15
Philips Semiconductors
Product specification
High efficiency DC/DC converter
TEA1208T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
Vn
PARAMETER
voltage on any pin
CONDITIONS
shut-down mode
operating mode
MIN.
−0.2
MAX.
+6.5
UNIT
V
V
−0.2
−25
−40
−40
+5.9
Tj
junction temperature
+150
+80
°C
°C
°C
V
Tamb
Tstg
Ves
ambient temperature
storage temperature
+125
+4000
+300
electrostatic handling voltage
human body model; note 1 −4000
machine model; note 2 −300
V
Notes
1. Class 3; equivalent to discharging a 100 pF capacitor through a 1500 resistor.
2. Class 2; equivalent to discharging a 200 pF capacitor through a 10 Ω resistor and a 0.75 µH inductor.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-a)
thermal resistance from junction to ambient in free air
150
K/W
QUALITY SPECIFICATION
In accordance with “SNW-FQ-611 part E”.
2002 Nov 15
8
Philips Semiconductors
Product specification
High efficiency DC/DC converter
TEA1208T
CHARACTERISTICS
Tamb = −40 to +80 °C; all voltages are measured with respect to ground; positive currents flow into the IC; unless
otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Voltage levels
UP CONVERSION; pin U/D = LOW
VI
input voltage
VI(start)
2.80
−
−
5.50
V
VO
output voltage
5.50
1.85
2.50
V
V
V
VI(start)
VI(uvlo)
start-up input voltage
IL < 62 mA
1.40
1.60
2.10
undervoltage lockout input voltage note 1
1.50
DOWN CONVERSION; PIN U/D = HIGH
VI
input voltage
note 2
2.80
1.30
−
−
5.50
5.50
V
V
VO
output voltage
GENERAL
Vfb
feedback input voltage
output voltage window
1.19
1.5
1.24
2.0
1.29
3.0
V
∆Vwdw
PWM mode
%
Current levels
Iq
quiescent current on pin 3
down conversion;
V3 = 3.6 V; note 3
52
65
72
µA
Ishdwn
ILX
current in shut-down mode
−
−
−
2
−
−
10
µA
A
maximum continuous current on
pin 4
Tamb = 60 °C
0.42
0.30
Tamb = 80 °C
A
∆Ilim
current limit deviation
Ilim = 0.5 to 2.5 A;
note 4
up conversion
−17.5
−17.5
−
−
+17.5
+17.5
%
%
down conversion
Power MOSFETs
RDSon
drain-to-source on-state resistance
N-type
P-type
0.10
0.10
0.20
0.22
0.30
0.35
Ω
Ω
Efficiency
η1
efficiency up conversion
VI = 3.6 V; VO = 4.6 V;
L1 = 10 µH; note 5
IL = 1 mA
−
−
−
−
−
−
88
93
93
94
95
92
−
−
−
−
−
−
%
%
%
%
%
%
IL = 10 mA
IL = 50 mA
IL = 100 mA
IL = 200 mA
IL = 500 mA
2002 Nov 15
9
Philips Semiconductors
Product specification
High efficiency DC/DC converter
TEA1208T
SYMBOL
η2
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
efficiency down conversion
VI = 3.6 V; VO = 2.0 V;
L1 = 10 µH; note 5
IL = 1 mA
−
−
−
−
−
−
86
91
92
92
93
89
−
−
−
−
−
−
%
IL = 10 mA
IL = 50 mA
IL = 100 mA
IL = 200 mA
IL = 500 mA
%
%
%
%
%
Timing
fsw
switching frequency
PWM mode
220
4
275
6.5
330
20
kHz
fsync
synchronization clock input
frequency
MHz
tres
response time
from standby to Po(max)
−
50
−
µs
Temperature
Tamb
Tmax
ambient temperature
−40
+25
175
+80
200
°C
°C
internal cut-off temperature
150
Digital levels
VlL
LOW-level input voltage
on pins 1, 5 and 8
0
−
0.4
V
VIH
HIGH-level input voltage
on pin 1
note 6
V3 − 0.4
−
−
V3 + 0.3
V3 + 0.3
V
V
on pins 5 and 8
0.55V3
Notes
1. The undervoltage lockout voltage shows wide specification limits since it decreases at increasing temperature. When
the temperature increases, the minimum supply voltage of the digital control part of the IC decreases and therefore
the correct operation of this function is guaranteed over the whole temperature range.
2. When VI is lower than the target output voltage but higher than 2.8 V, the P-type power MOSFET will remain
conducting (100% duty cycle), resulting in VO following VI.
3. V3 is the voltage on pin 3 (UPOUT/DNIN).
4. The current limit is defined by an external resistor Rlim (see Section “Current limiting resistors”). Accuracy of the
current limit increases in proportion to the programmed current limiting level.
5. The specified efficiency is valid when using an output capacitor having an ESR of 0.10 Ω and a 10 µH small size
inductor (Coilcraft DT1608C-103).
6. If the applied HIGH-level voltage is less than V3 − 1 V, the quiescent current (lq) of the device will increase.
2002 Nov 15
10
Philips Semiconductors
Product specification
High efficiency DC/DC converter
TEA1208T
APPLICATION INFORMATION
D1
UPOUT/DNIN
3
7
V
O
L1
LX
TEA1208T
R1
R2
V
4
I
FB
C2
1
6
5
8
2
C1
U/D GND SYNC SHDWN ILIM
R
lim
MCE156
Fig.5 Complete application diagram for up conversion.
L1
UPOUT/DNIN
LX
FB
V
V
3
4
7
I
O
TEA1208T
R1
R2
C1
1
2
5
6
8
C2
U/D ILIM SYNC GND SHDWN
D1
R
lim
MCE157
Fig.6 Complete application diagram for down conversion.
11
2002 Nov 15
Philips Semiconductors
Product specification
High efficiency DC/DC converter
TEA1208T
External component selection
FEEDBACK RESISTORS R1 AND R2
INDUCTOR L1
The output voltage is determined by the resistors
R1 and R2. The following conditions apply:
The performance of the TEA1208T is not very sensitive to
the inductance value. Best efficiency performance over a
wide load current range is achieved by using e.g. Coilcraft
DO1608C, having an inductance of 10 µH and a saturation
current level of 1.1 A. In case the maximum output current
is lower, other inductors are also suitable such as the small
sized Coilcraft DT1608 range or Murata LQH4N series.
• Use 1% accurate SMD type resistors only. In case larger
body resistors are used, the capacitance on pin 7
(feedback input) will be too large, causing inaccurate
operation.
• Resistors R1 and R2 should have a maximum value of
50 kΩ when connected in parallel. A higher value will
result in inaccurate operation.
INPUT CAPACITOR C1
Under these conditions, the output voltage can be
R1
The value of capacitor C1 strongly depends on the type of
input source. In general, a 100 µF tantalum capacitor will
do, or a 10 µF ceramic capacitor featuring very low series
resistance (ESR value).
calculated by the formula: VO = 1.24 × 1 +
-------
R2
CURRENT LIMITING RESISTORS
The maximum instantaneous current is set by the external
resistor Rlim. The preferred type is SMD, 1% accurate.
The connection of resistor Rlim differs per mode:
OUTPUT CAPACITOR C2
The value and type of capacitor C2 depend on the
maximum output current and the ripple voltage which is
allowed in the application. Low-ESR tantalum as well as
ceramic capacitors show good results. The most important
specification of capacitor C2 is its ESR, which mainly
determines the output voltage ripple.
• At up conversion: resistor Rlim must be connected
between pin 2 (ILIM) and pin 3 (UPOUT/DNIN).
238
The current limiting level is defined by: I Iim
=
---------
RIim
• At down conversion: resistor Rlim must be connected
between pin 2 (ILIM) and pin 6 (GND).
DIODE D1
The Schottky diode is only used a short time during
takeover from N-type power MOSFET and P-type power
MOSFET and vice versa. Therefore, a medium-power
diode such as Philips PRLL5819 is sufficient.
270
---------
RIim
The current limiting level is defined by:
I Iim
=
The average inductor current during limited current
operation also depends on the inductance value, input
voltage, output voltage and resistive losses in all
components in the power path. Ensure that
I
lim < Isat (saturation current) of the inductor.
2002 Nov 15
12
Philips Semiconductors
Product specification
High efficiency DC/DC converter
TEA1208T
PACKAGE OUTLINE
SO8: plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
D
E
A
X
v
c
y
H
M
A
E
Z
5
8
Q
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
1
4
e
w
M
detail X
b
p
0
2.5
5 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
(1)
(1)
(2)
UNIT
A
A
A
b
c
D
E
e
H
L
L
p
Q
v
w
y
Z
θ
1
2
3
p
E
max.
0.25
0.10
1.45
1.25
0.49
0.36
0.25
0.19
5.0
4.8
4.0
3.8
6.2
5.8
1.0
0.4
0.7
0.6
0.7
0.3
mm
1.27
0.050
1.05
0.041
1.75
0.25
0.01
0.25
0.01
0.25
0.1
8o
0o
0.010 0.057
0.004 0.049
0.019 0.0100 0.20
0.014 0.0075 0.19
0.16
0.15
0.244
0.228
0.039 0.028
0.016 0.024
0.028
0.012
inches 0.069
0.01 0.004
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
97-05-22
99-12-27
SOT96-1
076E03
MS-012
2002 Nov 15
13
Philips Semiconductors
Product specification
High efficiency DC/DC converter
TEA1208T
SOLDERING
• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
Introduction to soldering surface mount packages
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “Data Handbook IC26; Integrated Circuit Packages”
(document order number 9398 652 90011).
• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
There is no soldering method that is ideal for all surface
mount IC packages. Wave soldering can still be used for
certain surface mount ICs, but it is not suitable for fine pitch
SMDs. In these situations reflow soldering is
recommended.
– smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
The footprint must incorporate solder thieves at the
downstream end.
Reflow soldering
• For packages with leads on four sides, the footprint must
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Several methods exist for reflowing; for example,
convection or convection/infrared heating in a conveyor
type oven. Throughput times (preheating, soldering and
cooling) vary between 100 and 200 seconds depending
on heating method.
Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 220 °C for
thick/large packages, and below 235 °C for small/thin
packages.
Manual soldering
Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.
Wave soldering
Conventional single wave soldering is not recommended
for surface mount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.
When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.
To overcome these problems the double-wave soldering
method was specifically developed.
If wave soldering is used the following conditions must be
observed for optimal results:
2002 Nov 15
14
Philips Semiconductors
Product specification
High efficiency DC/DC converter
TEA1208T
Suitability of surface mount IC packages for wave and reflow soldering methods
SOLDERING METHOD
PACKAGE(1)
WAVE
not suitable
REFLOW(2)
BGA, LBGA, LFBGA, SQFP, TFBGA, VFBGA
suitable
HBCC, HBGA, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, HVQFN, not suitable(3)
HVSON, SMS
suitable
PLCC(4), SO, SOJ
LQFP, QFP, TQFP
SSOP, TSSOP, VSO
suitable
suitable
not recommended(4)(5) suitable
not recommended(6)
suitable
Notes
1. For more detailed information on the BGA packages refer to the “(LF)BGA Application Note” (AN01026); order a copy
from your Philips Semiconductors sales office.
2. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”.
3. These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder
cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side,
the solder might be deposited on the heatsink surface.
4. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
5. Wave soldering is suitable for LQFP, TQFP and QFP packages with a pitch (e) larger than 0.8 mm; it is definitely not
suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
6. Wave soldering is suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
2002 Nov 15
15
Philips Semiconductors
Product specification
High efficiency DC/DC converter
TEA1208T
DATA SHEET STATUS
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
LEVEL
DEFINITION
I
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information
Applications that are
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2002 Nov 15
16
Philips Semiconductors
Product specification
High efficiency DC/DC converter
TEA1208T
NOTES
2002 Nov 15
17
Philips Semiconductors
Product specification
High efficiency DC/DC converter
TEA1208T
NOTES
2002 Nov 15
18
Philips Semiconductors
Product specification
High efficiency DC/DC converter
TEA1208T
NOTES
2002 Nov 15
19
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2002
SCA74
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
403502/01/pp20
Date of release: 2002 Nov 15
Document order number: 9397 750 10575
相关型号:
TEA1208T/N1,118
IC SWITCHING REGULATOR, 330 kHz SWITCHING FREQ-MAX, PDSO8, 3.90 MM, PLASTIC, MS-012, SOT96-1, SO-8, Switching Regulator or Controller
NXP
TEA1211TW
Switching Regulator/Controller, Voltage-mode, 750kHz Switching Freq-Max, CMOS, PDSO20,
PHILIPS
TEA1211TW
IC SWITCHING REGULATOR, 750 kHz SWITCHING FREQ-MAX, PDSO20, 4.40 MM, HEATSINK, PLASTIC, SOT-527-1, TSSOP-20, Switching Regulator or Controller
NXP
TEA1401T-T
IC 1 A SWITCHING REGULATOR, 150 kHz SWITCHING FREQ-MAX, PDSO20, 7.50 MM, PLASTIC, MS-013AC, SOT-163-1, SOP-20, Switching Regulator or Controller
NXP
©2020 ICPDF网 联系我们和版权申明