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TEA1208T/N1,118 [NXP]

IC SWITCHING REGULATOR, 330 kHz SWITCHING FREQ-MAX, PDSO8, 3.90 MM, PLASTIC, MS-012, SOT96-1, SO-8, Switching Regulator or Controller;
TEA1208T/N1,118
型号： TEA1208T/N1,118
厂家： NXP    NXP
描述：

IC SWITCHING REGULATOR, 330 kHz SWITCHING FREQ-MAX, PDSO8, 3.90 MM, PLASTIC, MS-012, SOT96-1, SO-8, Switching Regulator or Controller

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INTEGRATED CIRCUITS  
DATA SHEET  
TEA1208T  
High efficiency DC/DC converter  
Product specification  
2002 Nov 15  
Philips Semiconductors  
Product specification  
High efficiency DC/DC converter  
TEA1208T  
FEATURES  
• Supply voltage source for low-voltage chip sets  
• Portable computers  
• Battery backup supplies  
• Cameras.  
• Fully integrated DC/DC converter circuit  
• Up-or-down conversion  
• Start-up from 1.85 V input voltage  
• Adjustable output voltage  
GENERAL DESCRIPTION  
• High efficiency over a wide range of loads  
The TEA1208T is a fully integrated DC/DC converter.  
Efficient, compact and dynamic power conversion is  
achieved using special digital control concepts - Pulse  
Width Modulation (PWM) and Pulse Frequency  
Modulation (PFM), integrated low RDSon CMOS power  
switches with low parasitic capacitances, and fully  
synchronous rectification.  
• Power handling capability up to 0.42 A continuous  
average current  
• 275 kHz switching frequency  
• Low quiescent power consumption  
• External clock synchronization  
• True current limit for Li-ion battery compatibility  
• Up to 100% duty cycle in down conversion  
• Undervoltage lockout  
The device operates at a switching frequency of 275 kHz  
requiring only minimum sized external components.  
Deadlock is prevented by an on-chip undervoltage lockout  
circuit.  
• Shut-down function  
• 8-pin SO package.  
Efficient behaviour during short load peaks and  
compatibility with Li-ion batteries is guaranteed by an  
accurate current limiting function.  
APPLICATIONS  
• Cellular and cordless phones, Personal Digital  
Assistants (PDAs) and others  
ORDERING INFORMATION  
PACKAGE  
TYPE NUMBER  
NAME  
DESCRIPTION  
plastic small outline package; 8 leads; body width 3.9 mm  
VERSION  
TEA1208T  
SO8  
SOT96-1  
2002 Nov 15  
2
Philips Semiconductors  
Product specification  
High efficiency DC/DC converter  
TEA1208T  
QUICK REFERENCE DATA  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
TYP.  
MAX.  
UNIT  
Voltage levels  
UP CONVERSION; pin U/D = LOW  
VI  
input voltage  
VI(start)  
2.80  
−
−
5.50  
V
V
V
VO  
output voltage  
5.50  
1.85  
VI(start)  
start-up input voltage  
IL < 62 mA  
1.40  
1.60  
DOWN CONVERSION; pin U/D = HIGH  
VI  
input voltage  
2.80  
1.30  
−
−
5.50  
5.50  
V
V
VO  
output voltage  
GENERAL  
Vfb  
feedback voltage  
1.19  
52  
1.24  
65  
1.29  
72  
V
Current levels  
Iq  
quiescent current on pin 3  
down conversion;  
VI = 3.6 V  
µA  
Ishdwn  
ILX  
current in shut-down state  
maximum continuous current on pin 4  
current limit deviation  
−
−
2
10  
µA  
Tamb = 80 °C  
−
0.30  
A
∆Ilim  
Ilim = 0.5 to 2.5 A  
up conversion  
down conversion  
−17.5  
−17.5  
−
−
+17.5  
+17.5  
%
%
Power MOSFETs  
RDSon  
drain-to-source on-state resistance  
N-type  
P-type  
0.10  
0.10  
0.20  
0.22  
0.30  
0.35  
Ω
Ω
Efficiency  
η1  
efficiency up conversion  
VI = 3.6 V; VO = 4.6 V;  
L1 = 10 µH  
IL = 1 mA  
−
−
88  
95  
−
−
%
%
IL = 200 mA  
η2  
efficiency down conversion  
VI = 3.6 V; VO = 2.0 V;  
L1 = 10 µH  
IL = 1 mA  
−
−
86  
93  
−
−
%
%
IL = 200 mA  
Timing  
fsw  
switching frequency  
PWM mode  
220  
4
275  
6.5  
50  
330  
20  
−
kHz  
MHz  
µs  
fsync  
tres  
synchronization clock input frequency  
response time  
from standby to P0(max)  
−
2002 Nov 15  
3
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  a
P-type POWER FET  
4
2
3
LX  
UPOUT/DNIN  
I/V  
INTERNAL  
SUPPLY  
CONVERTER  
sense FET  
START-UP  
ILIM  
CIRCUIT  
TEA1208T  
7
CONTROL LOGIC  
AND  
MODE GEARBOX  
FB  
CURRENT LIMIT  
COMPARATORS  
I/V  
CONVERTER  
N-type  
POWER  
FET  
TEMPERATURE  
PROTECTION  
BAND GAP  
REFERENCE  
TIME  
COUNTER  
sense  
FET  
13 MHz  
OSCILLATOR  
SYNC  
GATE  
DIGITAL CONTROLLER  
6
5
8
1
MCE155  
GND  
SYNC  
SHDWN U/D  
Fig.1 Block diagram.  
Philips Semiconductors  
Product specification  
High efficiency DC/DC converter  
TEA1208T  
PINNING  
SYMBOL  
U/D  
PIN  
DESCRIPTION  
1
up-or-down conversion  
selection input; active LOW for  
up conversion  
handbook, halfpage  
U/D  
1
2
3
4
8
SHDWN  
FB  
ILIM  
2
3
current limiting resistor  
connection  
ILIM  
7
6
5
TEA1208T  
UPOUT/DNIN  
output voltage in up conversion;  
input voltage in down  
conversion  
UPOUT/DNIN  
LX  
GND  
SYNC  
MCE154  
LX  
4
5
6
7
8
inductor connection  
synchronization clock input  
ground  
SYNC  
GND  
FB  
feedback input  
Fig.2 Pin configuration.  
SHDWN  
shut-down input  
FUNCTIONAL DESCRIPTION  
Control mechanism  
As soon as more load current is taken from the output the  
output voltage starts to decay.  
When the output voltage becomes lower than the low limit  
of the window, it is corrected by extending the period of the  
inductor current ramp-up time. As a result, the DC current  
level is increased and normal PWM control can continue.  
The output voltage (including ESR effect) is again within  
the predefined window. Figure 4 depicts the spread of the  
output voltage window. The absolute value is most  
dependent on spread, while the actual window size is not  
affected. For a given device, the output voltage will not  
vary more than 2% typically.  
The TEA1208T DC/DC converter is able to operate in  
either PFM (discontinuous conduction) or PWM  
(continuous conduction) mode. All switching actions are  
completely determined by a digital control circuit which  
uses the output voltage level as its control input. This  
special design enables the use of a pulse width and  
frequency modulation scheme, which ensures optimum  
power efficiency over the complete operating range of the  
converter.  
When high output power is requested, the device operates  
in PWM (continuous conduction) mode. This results in  
minimum AC currents in the circuit components and hence  
optimum efficiency, minimum costs and low EMC. In PWM  
mode, the output voltage is allowed to vary between a  
window represented by two predefined voltage levels.  
As long as the output voltage stays within this window,  
switching continues in a fixed pattern. When the output  
voltage reaches a window border, the digital controller  
immediately adjusts the pulse width and inserts a current  
step so that the output voltage stays within the window with  
higher or lower current capability. This approach enables  
very fast reaction to load variations. Figure 3 shows the  
converter’s response to a sudden load increase. The  
upper trace shows the output voltage. The ripple on top of  
the DC level is a result of the current in the output  
capacitor, which changes sign twice per cycle, times the  
capacitor’s internal Equivalent Series Resistance (ESR).  
After each ramp-down of the inductor current, i.e. when the  
ESR effect increases the output voltage, the converter  
determines what to do in the next cycle.  
In low output power situations, the TEA1208T will switch  
over to PFM (discontinuous conduction) operating mode.  
In this mode, regulation information obtained in previous  
PWM operating modes is used. This results in optimum  
inductor peak current levels in the PFM mode, which are  
slightly larger than the inductor ripple current in the PWM  
mode. As a result, the transition between PFM and PWM  
mode is optimum under all circumstances. In the PFM  
mode the TEA1208T regulates the output voltage to the  
high window limit as shown in Fig.3.  
Synchronous rectification  
For optimum efficiency over the whole load range,  
synchronous rectifiers inside the TEA1208T ensure that  
during the whole second switching phase, all inductor  
current will flow through the low-ohmic power MOSFETs.  
Special circuitry is included which detects that the inductor  
current reaches zero. Following this detection, the digital  
controller switches off the power MOSFET and starts  
regulation.  
2002 Nov 15  
5
Philips Semiconductors  
Product specification  
High efficiency DC/DC converter  
TEA1208T  
Start-up  
Current limiters  
Start-up from low input voltage in up conversion is realized  
by an independent start-up oscillator, which starts  
switching the N-type power MOSFET as soon as the  
voltage at pin UPOUT/DNIN is measured to be sufficiently  
high. The switch actions of the start-up oscillator will  
increase the output voltage. As soon as the output voltage  
is high enough for normal regulation, the digital control  
system takes over the control of the power MOSFETs.  
If the current in one of the power switches exceeds its limit  
in the PWM mode, the current ramp is stopped  
immediately, and the next switching phase is entered.  
Current limiting is required to enable optimal use of energy  
in Li-ion batteries, and to keep power conversion efficient  
during temporary high loads. Furthermore, current limiting  
protects the IC against overload conditions, inductor  
saturation, etc. The current limiting level is set by an  
external resistor.  
Undervoltage lockout  
External synchronization  
As a result of too high a load or disconnection of the input  
power source, the output voltage can drop so low that  
normal regulation cannot be guaranteed. In this case, the  
device switches back to start-up mode. If the output  
voltage drops even further, switching stops completely.  
If an external high-frequency clock is applied to the  
synchronization clock input, the switching frequency in  
PWM mode will be exactly that frequency divided by 22.  
In the PFM mode, the switching frequency is always lower.  
The quiescent current of the device increases when  
external clock pulses are applied. When no external  
synchronization is necessary, the synchronization clock  
input must be connected to ground level.  
Shut-down  
When the shut-down input is made HIGH, the converter  
disables both power switches reducing the power  
consumption to a few microamperes.  
Behaviour at input voltage exceeding the specified  
range  
Power switches  
In general, an input voltage exceeding the specified range  
is not recommended since instability may occur. There are  
two exceptions:  
The device has two power switches - one N-type and one  
P-type power MOSFET, having a typical drain-to-source  
resistance of 0.20 Ω and 0.22 Ω respectively.  
The maximum average current in the power switches is  
0.30 A at Tamb = 80 °C.  
• Up conversion: at an input voltage higher than the target  
output voltage, but up to 6 V, the converter will stop  
switching and the internal P-type power MOSFET will be  
conducting. The output voltage will equal the input  
voltage minus some resistive voltage drop. The current  
limiting function is not active.  
Temperature protection  
In PWM mode, the device will stop operating if the die  
temperature is too high (typically 175 °C). Operation  
resumes when the die temperature falls below 175 °C.  
As a result, low-frequency cycling between the on and off  
state will occur. Note that if the temperature of the device  
approaches Tmax, the actual maximum parameter limits  
may be very different from those specified.  
• Down conversion: when the input voltage is lower than  
the target output voltage, but higher than 2.8 V, the  
P-type power MOSFET will stay conducting resulting in  
an output voltage being equal to the input voltage minus  
some resistive voltage drop. The current limiting  
function remains active.  
2002 Nov 15  
6
Philips Semiconductors  
Product specification  
High efficiency DC/DC converter  
TEA1208T  
load increase  
start corrective action  
V
o
high window limit  
low window limit  
time  
I
L
MGK925  
time  
Fig.3 Response to load increase.  
maximum positive spread of V  
fb  
V
h
upper specification limit  
2%  
V
l
+4%  
V
h
V
out, typ  
2%  
V
l
−4%  
V
h
2%  
lower specification limit  
V
typical situation  
l
maximum negative spread of V  
MGR667  
fb  
Fig.4 Spread of location of output voltage window.  
7
2002 Nov 15  
Philips Semiconductors  
Product specification  
High efficiency DC/DC converter  
TEA1208T  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
SYMBOL  
Vn  
PARAMETER  
voltage on any pin  
CONDITIONS  
shut-down mode  
operating mode  
MIN.  
−0.2  
MAX.  
+6.5  
UNIT  
V
V
−0.2  
−25  
−40  
−40  
+5.9  
Tj  
junction temperature  
+150  
+80  
°C  
°C  
°C  
V
Tamb  
Tstg  
Ves  
ambient temperature  
storage temperature  
+125  
+4000  
+300  
electrostatic handling voltage  
human body model; note 1 −4000  
machine model; note 2 −300  
V
Notes  
1. Class 3; equivalent to discharging a 100 pF capacitor through a 1500 resistor.  
2. Class 2; equivalent to discharging a 200 pF capacitor through a 10 Ω resistor and a 0.75 µH inductor.  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
Rth(j-a)  
thermal resistance from junction to ambient in free air  
150  
K/W  
QUALITY SPECIFICATION  
In accordance with “SNW-FQ-611 part E”.  
2002 Nov 15  
8
Philips Semiconductors  
Product specification  
High efficiency DC/DC converter  
TEA1208T  
CHARACTERISTICS  
Tamb = −40 to +80 °C; all voltages are measured with respect to ground; positive currents flow into the IC; unless  
otherwise specified.  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
TYP.  
MAX.  
UNIT  
Voltage levels  
UP CONVERSION; pin U/D = LOW  
VI  
input voltage  
VI(start)  
2.80  
−
−
5.50  
V
VO  
output voltage  
5.50  
1.85  
2.50  
V
V
V
VI(start)  
VI(uvlo)  
start-up input voltage  
IL < 62 mA  
1.40  
1.60  
2.10  
undervoltage lockout input voltage note 1  
1.50  
DOWN CONVERSION; PIN U/D = HIGH  
VI  
input voltage  
note 2  
2.80  
1.30  
−
−
5.50  
5.50  
V
V
VO  
output voltage  
GENERAL  
Vfb  
feedback input voltage  
output voltage window  
1.19  
1.5  
1.24  
2.0  
1.29  
3.0  
V
∆Vwdw  
PWM mode  
%
Current levels  
Iq  
quiescent current on pin 3  
down conversion;  
V3 = 3.6 V; note 3  
52  
65  
72  
µA  
Ishdwn  
ILX  
current in shut-down mode  
−
−
−
2
−
−
10  
µA  
A
maximum continuous current on  
pin 4  
Tamb = 60 °C  
0.42  
0.30  
Tamb = 80 °C  
A
∆Ilim  
current limit deviation  
Ilim = 0.5 to 2.5 A;  
note 4  
up conversion  
−17.5  
−17.5  
−
−
+17.5  
+17.5  
%
%
down conversion  
Power MOSFETs  
RDSon  
drain-to-source on-state resistance  
N-type  
P-type  
0.10  
0.10  
0.20  
0.22  
0.30  
0.35  
Ω
Ω
Efficiency  
η1  
efficiency up conversion  
VI = 3.6 V; VO = 4.6 V;  
L1 = 10 µH; note 5  
IL = 1 mA  
−
−
−
−
−
−
88  
93  
93  
94  
95  
92  
−
−
−
−
−
−
%
%
%
%
%
%
IL = 10 mA  
IL = 50 mA  
IL = 100 mA  
IL = 200 mA  
IL = 500 mA  
2002 Nov 15  
9
Philips Semiconductors  
Product specification  
High efficiency DC/DC converter  
TEA1208T  
SYMBOL  
η2  
PARAMETER  
CONDITIONS  
MIN.  
TYP.  
MAX.  
UNIT  
efficiency down conversion  
VI = 3.6 V; VO = 2.0 V;  
L1 = 10 µH; note 5  
IL = 1 mA  
−
−
−
−
−
−
86  
91  
92  
92  
93  
89  
−
−
−
−
−
−
%
IL = 10 mA  
IL = 50 mA  
IL = 100 mA  
IL = 200 mA  
IL = 500 mA  
%
%
%
%
%
Timing  
fsw  
switching frequency  
PWM mode  
220  
4
275  
6.5  
330  
20  
kHz  
fsync  
synchronization clock input  
frequency  
MHz  
tres  
response time  
from standby to Po(max)  
−
50  
−
µs  
Temperature  
Tamb  
Tmax  
ambient temperature  
−40  
+25  
175  
+80  
200  
°C  
°C  
internal cut-off temperature  
150  
Digital levels  
VlL  
LOW-level input voltage  
on pins 1, 5 and 8  
0
−
0.4  
V
VIH  
HIGH-level input voltage  
on pin 1  
note 6  
V3 − 0.4  
−
−
V3 + 0.3  
V3 + 0.3  
V
V
on pins 5 and 8  
0.55V3  
Notes  
1. The undervoltage lockout voltage shows wide specification limits since it decreases at increasing temperature. When  
the temperature increases, the minimum supply voltage of the digital control part of the IC decreases and therefore  
the correct operation of this function is guaranteed over the whole temperature range.  
2. When VI is lower than the target output voltage but higher than 2.8 V, the P-type power MOSFET will remain  
conducting (100% duty cycle), resulting in VO following VI.  
3. V3 is the voltage on pin 3 (UPOUT/DNIN).  
4. The current limit is defined by an external resistor Rlim (see Section “Current limiting resistors”). Accuracy of the  
current limit increases in proportion to the programmed current limiting level.  
5. The specified efficiency is valid when using an output capacitor having an ESR of 0.10 Ω and a 10 µH small size  
inductor (Coilcraft DT1608C-103).  
6. If the applied HIGH-level voltage is less than V3 − 1 V, the quiescent current (lq) of the device will increase.  
2002 Nov 15  
10  
Philips Semiconductors  
Product specification  
High efficiency DC/DC converter  
TEA1208T  
APPLICATION INFORMATION  
D1  
UPOUT/DNIN  
3
7
V
O
L1  
LX  
TEA1208T  
R1  
R2  
V
4
I
FB  
C2  
1
6
5
8
2
C1  
U/D GND SYNC SHDWN ILIM  
R
lim  
MCE156  
Fig.5 Complete application diagram for up conversion.  
L1  
UPOUT/DNIN  
LX  
FB  
V
V
3
4
7
I
O
TEA1208T  
R1  
R2  
C1  
1
2
5
6
8
C2  
U/D ILIM SYNC GND SHDWN  
D1  
R
lim  
MCE157  
Fig.6 Complete application diagram for down conversion.  
11  
2002 Nov 15  
Philips Semiconductors  
Product specification  
High efficiency DC/DC converter  
TEA1208T  
External component selection  
FEEDBACK RESISTORS R1 AND R2  
INDUCTOR L1  
The output voltage is determined by the resistors  
R1 and R2. The following conditions apply:  
The performance of the TEA1208T is not very sensitive to  
the inductance value. Best efficiency performance over a  
wide load current range is achieved by using e.g. Coilcraft  
DO1608C, having an inductance of 10 µH and a saturation  
current level of 1.1 A. In case the maximum output current  
is lower, other inductors are also suitable such as the small  
sized Coilcraft DT1608 range or Murata LQH4N series.  
• Use 1% accurate SMD type resistors only. In case larger  
body resistors are used, the capacitance on pin 7  
(feedback input) will be too large, causing inaccurate  
operation.  
• Resistors R1 and R2 should have a maximum value of  
50 kΩ when connected in parallel. A higher value will  
result in inaccurate operation.  
INPUT CAPACITOR C1  
Under these conditions, the output voltage can be  
R1  
The value of capacitor C1 strongly depends on the type of  
input source. In general, a 100 µF tantalum capacitor will  
do, or a 10 µF ceramic capacitor featuring very low series  
resistance (ESR value).  
calculated by the formula: VO = 1.24 × 1 +  
-------  
R2  
CURRENT LIMITING RESISTORS  
The maximum instantaneous current is set by the external  
resistor Rlim. The preferred type is SMD, 1% accurate.  
The connection of resistor Rlim differs per mode:  
OUTPUT CAPACITOR C2  
The value and type of capacitor C2 depend on the  
maximum output current and the ripple voltage which is  
allowed in the application. Low-ESR tantalum as well as  
ceramic capacitors show good results. The most important  
specification of capacitor C2 is its ESR, which mainly  
determines the output voltage ripple.  
• At up conversion: resistor Rlim must be connected  
between pin 2 (ILIM) and pin 3 (UPOUT/DNIN).  
238  
The current limiting level is defined by: I Iim  
=
---------  
RIim  
• At down conversion: resistor Rlim must be connected  
between pin 2 (ILIM) and pin 6 (GND).  
DIODE D1  
The Schottky diode is only used a short time during  
takeover from N-type power MOSFET and P-type power  
MOSFET and vice versa. Therefore, a medium-power  
diode such as Philips PRLL5819 is sufficient.  
270  
---------  
RIim  
The current limiting level is defined by:  
I Iim  
=
The average inductor current during limited current  
operation also depends on the inductance value, input  
voltage, output voltage and resistive losses in all  
components in the power path. Ensure that  
I
lim < Isat (saturation current) of the inductor.  
2002 Nov 15  
12  
Philips Semiconductors  
Product specification  
High efficiency DC/DC converter  
TEA1208T  
PACKAGE OUTLINE  
SO8: plastic small outline package; 8 leads; body width 3.9 mm  
SOT96-1  
D
E
A
X
v
c
y
H
M
A
E
Z
5
8
Q
A
2
A
(A )  
3
A
1
pin 1 index  
θ
L
p
L
1
4
e
w
M
detail X  
b
p
0
2.5  
5 mm  
scale  
DIMENSIONS (inch dimensions are derived from the original mm dimensions)  
A
(1)  
(1)  
(2)  
UNIT  
A
A
A
b
c
D
E
e
H
L
L
p
Q
v
w
y
Z
θ
1
2
3
p
E
max.  
0.25  
0.10  
1.45  
1.25  
0.49  
0.36  
0.25  
0.19  
5.0  
4.8  
4.0  
3.8  
6.2  
5.8  
1.0  
0.4  
0.7  
0.6  
0.7  
0.3  
mm  
1.27  
0.050  
1.05  
0.041  
1.75  
0.25  
0.01  
0.25  
0.01  
0.25  
0.1  
8o  
0o  
0.010 0.057  
0.004 0.049  
0.019 0.0100 0.20  
0.014 0.0075 0.19  
0.16  
0.15  
0.244  
0.228  
0.039 0.028  
0.016 0.024  
0.028  
0.012  
inches 0.069  
0.01 0.004  
Notes  
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.  
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.  
REFERENCES  
OUTLINE  
EUROPEAN  
PROJECTION  
ISSUE DATE  
VERSION  
IEC  
JEDEC  
EIAJ  
97-05-22  
99-12-27  
SOT96-1  
076E03  
MS-012  
2002 Nov 15  
13  
Philips Semiconductors  
Product specification  
High efficiency DC/DC converter  
TEA1208T  
SOLDERING  
• Use a double-wave soldering method comprising a  
turbulent wave with high upward pressure followed by a  
smooth laminar wave.  
Introduction to soldering surface mount packages  
This text gives a very brief insight to a complex technology.  
A more in-depth account of soldering ICs can be found in  
our “Data Handbook IC26; Integrated Circuit Packages”  
(document order number 9398 652 90011).  
• For packages with leads on two sides and a pitch (e):  
– larger than or equal to 1.27 mm, the footprint  
longitudinal axis is preferred to be parallel to the  
transport direction of the printed-circuit board;  
There is no soldering method that is ideal for all surface  
mount IC packages. Wave soldering can still be used for  
certain surface mount ICs, but it is not suitable for fine pitch  
SMDs. In these situations reflow soldering is  
recommended.  
– smaller than 1.27 mm, the footprint longitudinal axis  
must be parallel to the transport direction of the  
printed-circuit board.  
The footprint must incorporate solder thieves at the  
downstream end.  
Reflow soldering  
• For packages with leads on four sides, the footprint must  
be placed at a 45° angle to the transport direction of the  
printed-circuit board. The footprint must incorporate  
solder thieves downstream and at the side corners.  
Reflow soldering requires solder paste (a suspension of  
fine solder particles, flux and binding agent) to be applied  
to the printed-circuit board by screen printing, stencilling or  
pressure-syringe dispensing before package placement.  
During placement and before soldering, the package must  
be fixed with a droplet of adhesive. The adhesive can be  
applied by screen printing, pin transfer or syringe  
dispensing. The package can be soldered after the  
adhesive is cured.  
Several methods exist for reflowing; for example,  
convection or convection/infrared heating in a conveyor  
type oven. Throughput times (preheating, soldering and  
cooling) vary between 100 and 200 seconds depending  
on heating method.  
Typical dwell time is 4 seconds at 250 °C.  
A mildly-activated flux will eliminate the need for removal  
of corrosive residues in most applications.  
Typical reflow peak temperatures range from  
215 to 250 °C. The top-surface temperature of the  
packages should preferable be kept below 220 °C for  
thick/large packages, and below 235 °C for small/thin  
packages.  
Manual soldering  
Fix the component by first soldering two  
diagonally-opposite end leads. Use a low voltage (24 V or  
less) soldering iron applied to the flat part of the lead.  
Contact time must be limited to 10 seconds at up to  
300 °C.  
Wave soldering  
Conventional single wave soldering is not recommended  
for surface mount devices (SMDs) or printed-circuit boards  
with a high component density, as solder bridging and  
non-wetting can present major problems.  
When using a dedicated tool, all other leads can be  
soldered in one operation within 2 to 5 seconds between  
270 and 320 °C.  
To overcome these problems the double-wave soldering  
method was specifically developed.  
If wave soldering is used the following conditions must be  
observed for optimal results:  
2002 Nov 15  
14  
Philips Semiconductors  
Product specification  
High efficiency DC/DC converter  
TEA1208T  
Suitability of surface mount IC packages for wave and reflow soldering methods  
SOLDERING METHOD  
PACKAGE(1)  
WAVE  
not suitable  
REFLOW(2)  
BGA, LBGA, LFBGA, SQFP, TFBGA, VFBGA  
suitable  
HBCC, HBGA, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, HVQFN, not suitable(3)  
HVSON, SMS  
suitable  
PLCC(4), SO, SOJ  
LQFP, QFP, TQFP  
SSOP, TSSOP, VSO  
suitable  
suitable  
not recommended(4)(5) suitable  
not recommended(6)  
suitable  
Notes  
1. For more detailed information on the BGA packages refer to the “(LF)BGA Application Note” (AN01026); order a copy  
from your Philips Semiconductors sales office.  
2. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum  
temperature (with respect to time) and body size of the package, there is a risk that internal or external package  
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the  
Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”.  
3. These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder  
cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side,  
the solder might be deposited on the heatsink surface.  
4. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.  
The package footprint must incorporate solder thieves downstream and at the side corners.  
5. Wave soldering is suitable for LQFP, TQFP and QFP packages with a pitch (e) larger than 0.8 mm; it is definitely not  
suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.  
6. Wave soldering is suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is  
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.  
2002 Nov 15  
15  
Philips Semiconductors  
Product specification  
High efficiency DC/DC converter  
TEA1208T  
DATA SHEET STATUS  
DATA SHEET  
STATUS(1)  
PRODUCT  
STATUS(2)(3)  
LEVEL  
DEFINITION  
I
Objective data  
Development This data sheet contains data from the objective specification for product  
development. Philips Semiconductors reserves the right to change the  
specification in any manner without notice.  
II  
Preliminary data Qualification  
This data sheet contains data from the preliminary specification.  
Supplementary data will be published at a later date. Philips  
Semiconductors reserves the right to change the specification without  
notice, in order to improve the design and supply the best possible  
product.  
III  
Product data  
Production  
This data sheet contains data from the product specification. Philips  
Semiconductors reserves the right to make changes at any time in order  
to improve the design, manufacturing and supply. Relevant changes will  
be communicated via a Customer Product/Process Change Notification  
(CPCN).  
Notes  
1. Please consult the most recently issued data sheet before initiating or completing a design.  
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was  
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.  
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.  
DEFINITIONS  
DISCLAIMERS  
Short-form specification  
The data in a short-form  
Life support applications  
These products are not  
specification is extracted from a full data sheet with the  
same type number and title. For detailed information see  
the relevant data sheet or data handbook.  
designed for use in life support appliances, devices, or  
systems where malfunction of these products can  
reasonably be expected to result in personal injury. Philips  
Semiconductors customers using or selling these products  
for use in such applications do so at their own risk and  
agree to fully indemnify Philips Semiconductors for any  
damages resulting from such application.  
Limiting values definition Limiting values given are in  
accordance with the Absolute Maximum Rating System  
(IEC 60134). Stress above one or more of the limiting  
values may cause permanent damage to the device.  
These are stress ratings only and operation of the device  
at these or at any other conditions above those given in the  
Characteristics sections of the specification is not implied.  
Exposure to limiting values for extended periods may  
affect device reliability.  
Right to make changes  
Philips Semiconductors  
reserves the right to make changes in the products -  
including circuits, standard cells, and/or software -  
described or contained herein in order to improve design  
and/or performance. When the product is in full production  
(status ‘Production’), relevant changes will be  
Application information  
Applications that are  
communicated via a Customer Product/Process Change  
Notification (CPCN). Philips Semiconductors assumes no  
responsibility or liability for the use of any of these  
products, conveys no licence or title under any patent,  
copyright, or mask work right to these products, and  
makes no representations or warranties that these  
products are free from patent, copyright, or mask work  
right infringement, unless otherwise specified.  
described herein for any of these products are for  
illustrative purposes only. Philips Semiconductors make  
no representation or warranty that such applications will be  
suitable for the specified use without further testing or  
modification.  
2002 Nov 15  
16  
Philips Semiconductors  
Product specification  
High efficiency DC/DC converter  
TEA1208T  
NOTES  
2002 Nov 15  
17  
Philips Semiconductors  
Product specification  
High efficiency DC/DC converter  
TEA1208T  
NOTES  
2002 Nov 15  
18  
Philips Semiconductors  
Product specification  
High efficiency DC/DC converter  
TEA1208T  
NOTES  
2002 Nov 15  
19  
Philips Semiconductors – a worldwide company  
Contact information  
For additional information please visit http://www.semiconductors.philips.com.  
Fax: +31 40 27 24825  
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.  
© Koninklijke Philips Electronics N.V. 2002  
SCA74  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
403502/01/pp20  
Date of release: 2002 Nov 15  
Document order number: 9397 750 10575  

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