APTGT150A120T3AG [MICROSEMI]
Phase leg Trench + Field Stop IGBT Power Module; 相脚沟道+场截止IGBT功率模块
| 型号： | APTGT150A120T3AG |
| 厂家： | 
Microsemi |
| 描述： | Phase leg Trench + Field Stop IGBT Power Module |
| 文件： | 总5页 (文件大小：201K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTGT150A120T3AG
P
Phase leg
Trench + Field Stop IGBT
Power Module
VCES = 1200V
IC = 150A @ Tc = 100°C
Application
29 30 31 32
13
•
•
•
•
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
4
3
Features
26 27 28
22 23 25
R1
•
Trench + Field Stop IGBT Technology
-
-
-
-
-
-
-
Low voltage drop
Low tail current
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
8
7
Low leakage current
RBSOA and SCSOA rated
16 18 19 20
14
•
•
•
•
•
Very low stray inductance
Kelvin emitter for easy drive
Internal thermistor for temperature monitoring
High level of integration
AlN substrate for improved thermal performance
28 27 26 25
23 22
20 19 18
29
30
16
15
Benefits
31
32
14
13
2
3
4
7
8
10 11
12
•
•
•
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
Pins 29/30/31/32 must be shorted together
Pins 26/27/28/22/23/25 must be shorted together
to achieve a phase leg
•
•
Pins 16/18/19/20 must be shorted together
Absolute maximum ratings
Symbol
Parameter
Max ratings
1200
220
Unit
V
VCES
Collector - Emitter Breakdown Voltage
TC = 25°C
TC = 100°C
TC = 25°C
IC
Continuous Collector Current
A
150
300
±20
833
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
V
W
TC = 25°C
Tj = 125°C
RBSOA Reverse Bias Safe Operating Area
300A @ 1150V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
1 – 5
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APTGT150A120T3AG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 1200V
250
2.1
µA
Tj = 25°C
1.7
2.0
5.8
V
GE = 15V
VCE(sat) Collector Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
V
IC = 150A
Tj = 125°C
VGE = VCE , IC = 3 mA
VGE = 20V, VCE = 0V
5.0
6.5
400
V
nA
IGES
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGE = 0V
10.7
0.56
0.48
V
CE = 25V
nF
f = 1MHz
VGE= ±15V ; VCE=600V
IC=150A
QG
Gate charge
1.4
µC
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 150A
RG = 2.2Ω
Td(on)
Tr
Turn-on Delay Time
Rise Time
280
40
ns
ns
Td(off) Turn-off Delay Time
420
Tf
Fall Time
75
Inductive Switching (125°C)
Td(on)
Tr
Turn-on Delay Time
Rise Time
290
45
V
V
GE = ±15V
Bus = 600V
Td(off) Turn-off Delay Time
520
90
IC = 150A
RG = 2.2Ω
Tf
Fall Time
V
V
GE = ±15V
Bus = 600V
Eon
Turn-on Switching Energy
Tj = 125°C
Tj = 125°C
14
16
mJ
A
IC = 150A
RG = 2.2Ω
V
Eoff
Isc
Turn-off Switching Energy
Short Circuit data
GE ≤15V ; VBus = 900V
600
tp ≤ 10µs ; Tj = 125°C
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
VRRM
1200
V
Tj = 25°C
350
600
IRM
VR=1200V
µA
Tj = 125°C
Tc = 100°C
Tj = 25°C
Tj = 125°C
IF
150
1.6
1.6
A
V
IF = 150A
2.1
VF
Diode Forward Voltage
V
GE = 0V
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
170
trr
Qrr
Er
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Energy
ns
µC
mJ
280
14
28
6
IF = 150A
VR = 600V
di/dt =2500A/µs
11
2 – 5
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APTGT150A120T3AG
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.15
0.25
°C/W
V
RthJC
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
VISOL
TJ
TSTG
TC
2500
-40
-40
-40
2.5
150
125
100
4.7
°C
Operating Case Temperature
Torque Mounting torque
Wt Package Weight
To heatsink
M4
N.m
g
110
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol
R25
∆R25/R25
B25/85
Characteristic
Resistance @ 25°C
Min Typ Max Unit
50
5
3952
4
kΩ
%
K
T25 = 298.15 K
%
∆B/B
TC=100°C
R25
T: Thermistor temperature
RT: Thermistor value at T
RT
=
⎡
⎤
⎥
⎦
⎛
⎞
1
1
⎜
⎟
⎟
exp B
−
⎢
25/ 85
⎜
T25
T
⎝
⎠
⎣
SP3 Package outline (dimensions in mm)
2 8
1 7
1
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
3 – 5
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APTGT150A120T3AG
Typical Performance Curve
Output Characteristics (VGE=15V)
Output Characteristics
300
300
250
200
150
100
50
TJ = 125°C
VGE=17V
250
200
150
100
50
TJ=25°C
VGE=13V
TJ=125°C
VGE=15V
VGE=9V
0
0
0
1
2
3
4
0
1
2
CE (V)
3
4
VCE (V)
V
Energy losses vs Collector Current
Transfert Characteristics
300
250
200
150
100
50
30
25
20
15
10
5
VCE = 600V
TJ=25°C
V
GE = 15V
RG = 2.2 Ω
TJ = 125°C
Eoff
TJ=125°C
Eon
Er
TJ=125°C
0
0
0
50
100
IC (A)
150
200
250
5
6
7
8
9
10
11
12
VGE (V)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
40
350
300
250
200
150
100
50
VCE = 600V
Eon
35
30
25
20
15
10
5
V
GE =15V
IC = 150A
TJ = 125°C
Eoff
VGE=15V
TJ=125°C
RG=2.2 Ω
Er
0
0
0
2
4
6
8
10 12 14 16
0
400
800
1200
1600
VCE (V)
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.16
0.12
0.08
0.04
0
0.9
IGBT
0.7
0.5
0.3
0.1
Single Pulse
0.01
0.05
0.00001
0.0001
0.001
0.1
1
10
rectangular Pulse Duration (Seconds)
4 – 5
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APTGT150A120T3AG
Operating Frequency vs Collector Current
Forward Characteristic of diode
100
80
60
40
20
0
300
VCE=600V
D=50%
RG=2.2 Ω
250
200
ZVS
TJ=125°C
TC=75°C
TJ=125°C
150
ZCS
100
TJ=125°C
50
Hard
Switching
TJ=25°C
0
0
0.4
0.8
1.2
1.6
2
2.4
10
40
70 100 130 160 190 220
VF (V)
IC (A)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.3
0.2
0.1
0
Diode
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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