APTGT150A120TG [MICROSEMI]
Phase leg Fast Trench + Field Stop IGBT Power Module; 相脚快速沟道+场截止IGBT功率模块
| 型号： | APTGT150A120TG |
| 厂家： | 
Microsemi |
| 描述： | Phase leg Fast Trench + Field Stop IGBT Power Module |
| 文件： | 总5页 (文件大小：258K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTGT150A120TG
Phase leg
Fast Trench + Field Stop IGBT®
Power Module
VCES = 1200V
IC = 150A @ Tc = 80°C
Application
•
•
•
•
Welding converters
VBUS
NTC2
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Q1
G1
E1
Features
•
Fast Trench + Field Stop IGBT® Technology
-
-
-
-
-
-
-
-
Low voltage drop
OUT
Low tail current
Q2
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
G2
E2
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
•
•
Kelvin emitter for easy drive
Very low stray inductance
0/VBUS
NTC1
-
-
Symmetrical design
Lead frames for power connections
•
•
High level of integration
Internal thermistor for temperature monitoring
Benefits
G2
•
•
•
•
•
•
•
•
Stable temperature behavior
OUT
OUT
E2
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
VBUS
0/VBUS
E1
G1
E2
G2
NTC2
NTC1
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
220
150
350
±20
690
V
TC = 25°C
TC = 80°C
TC = 25°C
IC
Continuous Collector Current
A
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
V
W
TC = 25°C
RBSOA Reverse Bias Safe Operating Area
Tj = 125°C 300A @ 1150V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
1 - 5
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APTGT150A120TG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 1200V
250
2.1
µA
Tj = 25°C
Tj = 125°C
1.7
2.0
5.8
VGE = 15V
VCE(sat) Collector Emitter Saturation Voltage
V
IC = 150A
VGE(th) Gate Threshold Voltage
IGES
VGE = VCE , IC = 3 mA
VGE = 20V, VCE = 0V
5.0
6.5
400
V
nA
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Cies
Coes
Cres
Input Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
10.7
nF
Output Capacitance
0.56
0.48
280
40
Reverse Transfer Capacitance
Inductive Switching (25°C)
VGE = ±15V
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
ns
VBus = 600V
420
IC = 150A
75
RG = 2.2Ω
Inductive Switching (125°C)
VGE = ±15V
290
45
520
ns
VBus = 600V
IC = 150A
Tf
Fall Time
90
RG = 2.2Ω
VGE = ±15V
Tj = 125°C
VBus = 600V
Eon
Turn-on Switching Energy
14
16
mJ
IC = 150A
Tj = 125°C
RG = 2.2Ω
Eoff
Turn-off Switching Energy
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
1200
V
Tj = 25°C
VR=1200V
250
500
IRM
µA
Tj = 125°C
IF
DC Forward Current
Tc = 80°C
150
1.6
1.6
170
280
15
29
7
12
A
V
Tj = 25°C
2.1
VF
Diode Forward Voltage
IF = 150A
Tj = 125°C
Tj = 25°C
Tj = 125°C
trr
Reverse Recovery Time
ns
IF = 150A
Tj = 25°C
VR = 600V
Qrr
Er
Reverse Recovery Charge
Reverse Recovery Energy
µC
mJ
Tj = 125°C
Tj = 25°C
Tj = 125°C
di/dt =3000A/µs
2 - 5
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APTGT150A120TG
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
R25 Resistance @ 25°C
B25/85 T25 = 298.15 K
Min Typ Max Unit
50
kΩ
K
3952
R25
T: Thermistor temperature
RT: Thermistor value at T
RT
=
1
1
T
25/85
exp B
−
T25
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.18
°C/W
RthJC
Junction to Case Thermal Resistance
0.34
VISOL
TJ
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
2500
-40
-40
-40
2.5
V
150
125
125
4.7
°C
TSTG
TC
Operating Case Temperature
Torque Mounting torque
Wt
To Heatsink
M5
N.m
g
Package Weight
160
SP4 Package outline (dimensions in mm)
ALL DIMENSIONSMARKED " * " ARE TOLERENCED AS :
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
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APTGT150A120TG
Typical Performance Curve
Output Characteristics (VGE=15V)
Output Characteristics
300
300
250
200
150
100
50
TJ = 125°C
250
200
150
100
50
VGE=17V
TJ=25°C
VGE=13V
TJ=125°C
VGE=15V
VGE=9V
0
0
0
1
2
3
4
0
1
2
3
4
VCE (V)
VCE (V)
Energy losses vs Collector Current
Transfert Characteristics
300
250
200
150
100
50
40
30
20
10
0
VCE = 600V
TJ=25°C
V
GE = 15V
R
G = 2.2 Ω
TJ = 125°C
TJ=125°C
Eon
Er
Eoff
TJ=125°C
0
0
50
100
150
C (A)
200
250
300
5
6
7
8
9
10
11
12
I
VGE (V)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
40
350
300
250
200
150
100
50
VCE = 600V
Eon
35
30
25
20
15
10
5
V
I
GE =15V
C = 150A
TJ = 125°C
Eoff
Er
VGE=15V
TJ=125°C
RG=2.2 Ω
0
0
0
2
4
6
8
10 12 14 16
0
400
800
VCE (V)
1200
1600
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.2
IGBT
0.9
0.7
0.5
0.3
0.16
0.12
0.08
0.04
0
0.1
0.05
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
4 - 5
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APTGT150A120TG
Operating Frequency vs Collector Current
Forward Characteristic of diode
60
50
40
30
20
10
0
300
VCE=600V
D=50%
250
200
150
100
50
RG=2.2 Ω
TJ=125°C
TC=75°C
ZVS
TJ=125°C
ZCS
Hard
TJ=125°C
TJ=25°C
Switching
0
0
0.4
0.8
1.2
VF (V)
1.6
2
2.4
10
40
70 100 130 160 190 220
I
C (A)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Diode
0.35
0.3
0.9
0.7
0.25
0.2
0.5
0.3
0.15
0.1
0.1
Single Pulse
0.01
0.05
0.05
0
0.00001
0.0001
0.001
0.1
1
10
rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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