APTGT150A60TG [MICROSEMI]
Phase leg Trench + Field Stop IGBT Power Module; 相脚沟道+场截止IGBT功率模块型号: | APTGT150A60TG |
厂家: | Microsemi |
描述: | Phase leg Trench + Field Stop IGBT Power Module |
文件: | 总5页 (文件大小:258K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
APTGT150A60TG
Phase leg
Trench + Field Stop IGBT®
Power Module
VCES = 600V
IC = 150A @ Tc = 80°C
Application
VBUS
NTC2
•
•
•
•
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Q1
G1
E1
Features
•
Trench + Field Stop IGBT® Technology
OUT
-
-
-
-
-
-
-
-
Low voltage drop
Low tail current
Q2
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
G2
E2
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
0/VBUS
NTC1
•
•
Kelvin emitter for easy drive
Very low stray inductance
-
-
Symmetrical design
Lead frames for power connections
•
•
High level of integration
Internal thermistor for temperature monitoring
G2
Benefits
OUT
OUT
E2
•
•
•
•
•
•
•
•
Stable temperature behavior
Very rugged
VBUS
0/VBUS
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
E1
G1
E2
G2
NTC2
NTC1
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
225
150
350
±20
480
V
TC = 25°C
TC = 80°C
TC = 25°C
IC
Continuous Collector Current
A
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
V
W
TC = 25°C
Tj = 150°C
RBSOA Reverse Bias Safe Operating Area
300A @ 550V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
1 - 5
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APTGT150A60TG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 600V
250
1.9
µA
Tj = 25°C
Tj = 150°C
1.5
1.7
5.8
VGE =15V
VCE(sat) Collector Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
IGES
V
IC = 150A
VGE = VCE , IC = 1.5 mA
VGE = 20V, VCE = 0V
5.0
6.5
400
V
nA
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Cies
Coes
Cres
Input Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
9200
pF
Output Capacitance
580
270
115
45
225
55
Reverse Transfer Capacitance
Inductive Switching (25°C)
VGE = ±15V
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
ns
VBus = 300V
IC = 150A
RG = 3.3Ω
Inductive Switching (150°C)
VGE = ±15V
130
50
VBus = 300V
ns
IC = 150A
300
RG = 3.3Ω
Tf
Fall Time
70
0.85
1.5
4.1
5.3
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
VGE = ±15V
VBus = 300V
IC = 150A
Eon
Turn on Energy
mJ
mJ
Eoff
Turn off Energy
RG = 3.3Ω
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
600
V
Tj = 25°C
Tj = 150°C
Tc = 80°C
Tj = 25°C
Tj = 150°C
250
500
IRM
Maximum Reverse Leakage Current
VR=600V
µA
IF
DC Forward Current
150
1.6
1.5
A
V
IF = 150A
VGE = 0V
2
VF
Diode Forward Voltage
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
130
225
6.9
14.5
1.6
trr
Qrr
Er
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Energy
ns
µC
mJ
IF = 150A
VR = 300V
di/dt =3000A/µs
3.5
2 - 5
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APTGT150A60TG
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
R25 Resistance @ 25°C
B25/85 T25 = 298.15 K
Min Typ Max Unit
50
kΩ
K
3952
R25
T: Thermistor temperature
RT: Thermistor value at T
RT
=
1
1
T
25/85
exp B
−
T25
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.31
RthJC
Junction to Case Thermal Resistance
°C/W
0.52
VISOL
TJ
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
2500
-40
-40
-40
2.5
V
175
125
100
4.7
°C
TSTG
TC
Operating Case Temperature
Torque Mounting torque
Wt
To Heatsink
M5
N.m
g
Package Weight
160
SP4 Package outline (dimensions in mm)
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
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APTGT150A60TG
Typical Performance Curve
Output Characteristics (VGE=15V)
Output Characteristics
300
250
200
150
100
50
300
250
200
150
100
50
VGE=19V
TJ=25°C
TJ = 150°C
TJ=125°C
VGE=13V
VGE=15V
TJ=150°C
VGE=9V
TJ=25°C
0
0
0
0.5
1
1.5
VCE (V)
2
2.5
3
3.5
0
0.5
1
1.5
VCE (V)
2
2.5
3
Energy losses vs Collector Current
Transfert Characteristics
300
250
200
150
100
50
10
8
VCE = 300V
Eoff
TJ=25°C
VGE = 15V
R
G = 3.3Ω
TJ = 150°C
6
Er
4
TJ=125°C
Eon
TJ=150°C
2
TJ=25°C
10
0
0
0
50
100 150
C (A)
200 250
300
5
6
7
8
9
11
12
I
VGE (V)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
12
350
300
250
200
150
100
50
VCE = 300V
Eon
V
GE =15V
10
8
IC = 150A
Eoff
Eoff
TJ = 150°C
6
4
VGE=15V
TJ=150°C
RG=3.3Ω
Er
2
Eon
0
0
0
5
10
15
20
25
0
100 200 300 400 500 600 700
CE (V)
V
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.35
0.3
IGBT
0.9
0.25
0.2
0.7
0.5
0.3
0.15
0.1
0.1
0.05
0.05
Single Pulse
0.01
0
0.00001
0.0001
0.001
0.1
1
10
Rectangular Pulse Duration in Seconds
4 - 5
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APTGT150A60TG
Operating Frequency vs Collector Current
Forward Characteristic of diode
300
250
200
150
100
50
120
100
80
60
40
20
0
VCE=300V
D=50%
RG=3.3Ω
TJ=150°C
Tc=85°C
ZVS
ZCS
TJ=125°C
TJ=150°C
Hard
switching
TJ=25°C
0
0
0.4
0.8
1.2
F (V)
1.6
2
2.4
0
50
100
C (A)
150
200
V
I
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.6
0.5
0.4
0.3
0.2
0.1
0
Diode
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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