APTGT150DA120D1G [MICROSEMI]
Boost chopper Trench + Field Stop IGBT Power Module; 升压斩波沟道+场截止IGBT功率模块
| 型号： | APTGT150DA120D1G |
| 厂家： | 
Microsemi |
| 描述： | Boost chopper Trench + Field Stop IGBT Power Module |
| 文件： | 总4页 (文件大小：180K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTGT150DA120D1G
Boost chopper
Trench + Field Stop IGBT
Power Module
VCES = 1200V
IC = 150A @ Tc = 80°C
Application
•
•
•
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
3
Features
•
Trench + Field Stop IGBT Technology
1
Q2
-
-
-
-
-
-
-
Low voltage drop
Low tail current
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
6
7
2
Low leakage current
RBSOA and SCSOA rated
•
•
•
Kelvin emitter for easy drive
High level of integration
M5 power connectors
Benefits
•
Outstanding performance at high frequency
operation
•
•
•
•
•
•
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
1200
Unit
V
VCES
Collector - Emitter Breakdown Voltage
TC = 25°C
TC = 80°C
TC = 25°C
220
150
300
±20
690
IC
Continuous Collector Current
A
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
V
W
TC = 25°C
RBSOA Reverse Bias Safe Operating Area
Tj = 125°C 300A @ 1100V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
1 - 4
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APTGT150DA120D1G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 1200V
250
2.1
µA
Tj = 25°C
1.7
2.0
5.8
V
GE = 15V
VCE(sat) Collector Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
V
IC = 150A
Tj = 125°C
VGE = VCE , IC = 6 mA
VGE = 20V, VCE = 0V
5.0
6.5
600
V
nA
IGES
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Min Typ Max Unit
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
10.8
nF
0.56
0.5
VGE=±15V, IC=150A
VCE=600V
QG
Gate charge
1.4
µC
Inductive Switching (25°C)
Td(on)
Tr
Turn-on Delay Time
Rise Time
250
90
V
V
GE = ±15V
Bus = 600V
ns
ns
Td(off) Turn-off Delay Time
550
IC = 150A
RG = 4.7Ω
Tf
Fall Time
130
Inductive Switching (125°C)
Td(on)
Tr
Turn-on Delay Time
Rise Time
300
100
650
180
V
GE = ±15V
VBus = 600V
IC = 150A
Td(off) Turn-off Delay Time
Tf
Fall Time
RG = 4.7Ω
VGE = ±15V
VBus = 600V
IC = 150A
Eon
Turn on Energy
Tj = 125°C
Tj = 125°C
11
26
mJ
A
Eoff
Isc
Turn off Energy
Short Circuit data
RG = 4.7Ω
V
GE ≤15V ; VBus = 900V
600
tp ≤ 10µs ; Tj = 125°C
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward current
VRRM
1200
V
Tj = 25°C
250
500
IRM
VR=1200V
µA
Tj = 125°C
Tc = 80°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
IF
150
1.6
1.6
250
350
15
29
7
12
A
V
IF = 150A
VGE = 0V
2.1
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Energy
ns
µC
mJ
IF = 150A
VR = 600V
di/dt =3000A/µs
Qrr
Err
2 - 4
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APTGT150DA120D1G
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.18
0.34
°C/W
V
RthJC
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
VISOL
TJ
TSTG
TC
4000
-40
-40
-40
2
150
125
125
3.5
5
°C
Operating Case Temperature
For terminals
To Heatsink
M5
M6
Torque Mounting torque
N.m
g
3
Wt
Package Weight
180
D1 Package outline (dimensions in mm)
Typical Performance Curve
Operating Frequency vs Collector Current
Forward Characteristic of diode
50
40
30
20
10
0
300
VCE=600V
D=50%
RG=4.7 Ω
TJ=125°C
TC=75°C
250
200
150
100
50
ZCS
ZVS
TJ=125°C
TJ=125°C
Hard
switching
TJ=25°C
1.6
0
0
0.4
0.8
1.2
F (V)
2
2.4
10
50
90
C (A)
130
170
210
V
I
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.35
0.3
0.9
0.7
Diode
0.25
0.2
0.5
0.3
0.15
0.1
0.1
Single Pulse
0.01
0.05
0
0.05
0.00001
0.0001
0.001
0.1
1
10
rectangular Pulse Duration (Seconds)
3 - 4
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APTGT150DA120D1G
Output Characteristics (VGE=15V)
Output Characteristics
300
300
250
200
150
100
50
TJ = 125°C
250
TJ=25°C
VGE=17V
VGE=13V
VGE=15V
VGE=9V
TJ=125°C
200
150
100
50
0
0
0
1
2
3
4
0
1
2
CE (V)
3
4
VCE (V)
V
Energy losses vs Collector Current
Transfert Characteristics
300
250
200
150
100
50
60
50
40
30
20
10
0
VCE = 600V
VGE = 15V
TJ=25°C
RG = 4.7 Ω
Eoff
TJ = 125°C
TJ=125°C
Eon
Err
TJ=125°C
Eon
0
0
50
100
150
200
250
300
1600
10
5
6
7
8
9
10
11
12
IC (A)
VGE (V)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
50
350
300
250
200
150
100
50
VCE = 600V
Eon
VGE =15V
40
IC = 150A
TJ = 125°C
Eoff
30
20
Eon
VGE=15V
TJ=125°C
RG=4.7 Ω
Err
10
0
0
0
400
800
1200
4
8
12
16
20
24
28
32
VCE (V)
Gate Resistance (ohms)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.2
0.9
0.7
0.5
0.3
0.16
0.12
0.08
0.04
0
IGBT
0.1
Single Pulse
0.05
0.00001
0.0001
0.001
0.01
0.1
1
rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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