APTGT150A60T1G [MICROSEMI]
Phase leg Trench + Field Stop IGBT® Power Module; 相脚沟道+场站IGBT ？电源模块
| 型号： | APTGT150A60T1G |
| 厂家： | 
Microsemi |
| 描述： | Phase leg Trench + Field Stop IGBT® Power Module |
| 文件： | 总5页 (文件大小：277K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTGT150A60T1G
Phase leg
Trench + Field Stop IGBT®
Power Module
VCES = 600V
IC = 150A* @ Tc = 80°C
Application
5
6
11
•
•
•
•
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Q1
CR1
CR2
7
8
Features
Trench + Field Stop IGBT® Technology
3
4
•
NTC
-
-
-
-
-
-
-
Low voltage drop
Q2
Low tail current
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
9
10
Low leakage current
RBSOA and SCSOA rated
12
1
2
•
Very low stray inductance
-
Symmetrical design
•
•
Internal thermistor for temperature monitoring
High level of integration
Benefits
•
•
•
•
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
•
•
Low profile
RoHS Compliant
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Absolute maximum ratings
Symbol
Parameter
Max ratings
600
Unit
VCES
Collector - Emitter Breakdown Voltage
V
TC = 25°C
TC = 80°C
TC = 25°C
225 *
150 *
350
IC
Continuous Collector Current
A
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
±20
480
300A @ 550V
V
W
TC = 25°C
Tj = 150°C
RBSOA Reverse Bias Safe Operating Area
Specification of IGBT device but output current must be limited to 75A to not exceed a delta of temperature greater
than 30°C for the connectors.
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
1 – 5
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APTGT150A60T1G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 600V
250
1.9
µA
Tj = 25°C
1.5
1.7
5.8
V
GE =15V
VCE(sat) Collector Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
IGES
V
IC = 150A
Tj = 150°C
VGE = VCE , IC = 1.5 mA
5.0
6.5
400
V
nA
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Cies
Coes
Cres
Td(on)
Tr
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
VGE = 0V
9200
VCE = 25V
f = 1MHz
pF
580
270
115
45
Inductive Switching (25°C)
V
GE = ±15V
ns
VBus = 300V
Td(off) Turn-off Delay Time
225
IC = 150A
RG = 3.3Ω
Tf
Td(on)
Tr
Fall Time
55
Inductive Switching (150°C)
Turn-on Delay Time
Rise Time
130
50
VGE = ±15V
V
Bus = 300V
ns
IC = 150A
Td(off) Turn-off Delay Time
300
RG = 3.3Ω
Tf
Fall Time
70
0.85
1.5
4.1
5.3
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
V
GE = ±15V
Eon
Turn on Energy
mJ
mJ
VBus = 300V
IC = 150A
Eoff
Turn off Energy
RG = 3.3Ω
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
VRRM
IRM
IF
600
V
µA
A
Tj = 25°C
Tj = 150°C
Tc = 80°C
Tj = 25°C
Tj = 150°C
250
500
VR=600V
150
1.6
IF = 150A
VGE = 0V
2
VF
Diode Forward Voltage
V
1.5
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
130
225
6.9
14.5
1.6
3.5
trr
Qrr
Er
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Energy
ns
µC
mJ
IF = 150A
VR = 300V
di/dt =3000A/µs
2 – 5
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APTGT150A60T1G
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.31
0.52
°C/W
V
RthJC
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
VISOL
TJ
2500
-40
-40
-40
2.5
175
125
100
4.7
80
°C
TSTG
TC
Operating Case Temperature
Torque Mounting torque
To heatsink
M4
N.m
g
Wt
Package Weight
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
Min Typ Max Unit
R25
Resistance @ 25°C
50
kΩ
K
B 25/85 T25 = 298.15 K
3952
R25
T: Thermistor temperature
RT: Thermistor value at T
RT
=
1
1
T
25/ 85
exp B
−
T25
SP1 Package outline (dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
3 – 5
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APTGT150A60T1G
Typical Performance Curve
Output Characteristics (VGE=15V)
Output Characteristics
300
300
250
200
150
100
50
VGE=19V
TJ=25°C
TJ = 150°C
250
200
150
100
50
TJ=125°C
VGE=13V
VGE=15V
TJ=150°C
VGE=9V
TJ=25°C
0
0
0
0.5
1
1.5
VCE (V)
2
2.5
3
3.5
0
0.5
1
1.5
VCE (V)
2
2.5
3
Energy losses vs Collector Current
Transfert Characteristics
300
250
200
150
100
50
10
8
VCE = 300V
Eoff
TJ=25°C
VGE = 15V
RG = 3.3Ω
TJ = 150°C
6
Er
4
TJ=125°C
Eon
TJ=150°C
2
TJ=25°C
10
0
0
0
50
100
150
IC (A)
200
250
300
5
6
7
8
9
11
12
VGE (V)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
12
350
300
250
200
150
100
50
VCE = 300V
Eon
VGE =15V
10
IC = 150A
TJ = 150°C
Eoff
Eoff
8
6
4
2
0
VGE=15V
TJ=150°C
RG=3.3Ω
Er
Eon
0
0
5
10
15
20
25
0
100 200 300 400 500 600 700
VCE (V)
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.35
0.3
IGBT
0.9
0.25
0.2
0.7
0.5
0.3
0.15
0.1
0.1
0.05
0.05
0
Single Pulse
0.01
0.00001
0.0001
0.001
0.1
1
10
Rectangular Pulse Duration in Seconds
4 – 5
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APTGT150A60T1G
Operating Frequency vs Collector Current
Forward Characteristic of diode
300
120
100
80
60
40
20
0
VCE=300V
D=50%
RG=3.3Ω
TJ=150°C
Tc=85°C
250
200
150
100
50
ZVS
ZCS
TJ=125°C
TJ=150°C
Hard
switching
TJ=25°C
1.6
0
0
0.4
0.8
1.2
VF (V)
2
2.4
0
50
100
150
200
IC (A)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.6
0.5
0.4
0.3
0.2
0.1
0
Diode
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
5 – 5
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