APTGT150A60T3AG [MICROSEMI]
Phase leg Trench + Field Stop IGBT Power Module; 相脚沟道+场截止IGBT功率模块
| 型号： | APTGT150A60T3AG |
| 厂家： | 
Microsemi |
| 描述： | Phase leg Trench + Field Stop IGBT Power Module |
| 文件： | 总5页 (文件大小：197K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTGT150A60T3AG
Phase leg
Trench + Field Stop IGBT
Power Module
VCES = 600V
IC = 150A @ Tc = 100°C
Application
29 30 31 32
13
•
•
•
•
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
4
3
Features
•
Trench + Field Stop IGBT Technology
26 27 28
22 23 25
R1
-
-
-
-
-
-
-
Low voltage drop
Low tail current
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
8
7
Low leakage current
RBSOA and SCSOA rated
•
•
•
•
•
Very low stray inductance
Kelvin emitter for easy drive
Internal thermistor for temperature monitoring
High level of integration
AlN substrate for improved thermal performance
16 18 19 20
14
28 27 26 25
23 22
20 19 18
29
30
16
15
Benefits
•
•
•
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
31
32
14
13
•
•
•
Low profile
Easy paralleling due to positive TC of VCEsat
RoHS Compliant
2
3
4
7
8
10 11
12
Pins 29/30/31/32 must be shorted together
Pins 26/27/28/22/23/25 must be shorted together
to achieve a phase leg
Pins 16/18/19/20 must be shorted together
Absolute maximum ratings
Symbol
Parameter
Max ratings
600
Unit
V
VCES
Collector - Emitter Breakdown Voltage
TC = 25°C
TC = 100°C
TC = 25°C
225
150
300
±20
IC
Continuous Collector Current
A
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
V
W
TC = 25°C
Tj = 150°C
600
RBSOA Reverse Bias Safe Operating Area
300A @ 550V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
1 – 5
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APTGT150A60T3AG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 600V
250
1.9
µA
Tj = 25°C
1.5
1.7
5.8
V
GE =15V
VCE(sat) Collector Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
V
IC = 150A
Tj = 150°C
VGE = VCE , IC = 1.5 mA
VGE = 20V, VCE = 0V
5.0
6.5
400
V
nA
IGES
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGE = 0V
9200
580
270
V
CE = 25V
pF
f = 1MHz
VGE= ±15V ; VCE=300V
IC=150A
QG
Gate charge
1.6
µC
Inductive Switching (25°C)
Td(on)
Tr
Turn-on Delay Time
Rise Time
115
45
V
V
GE = ±15V
Bus = 300V
ns
ns
Td(off) Turn-off Delay Time
225
IC = 150A
RG = 3.3Ω
Inductive Switching (150°C)
Tf
Td(on)
Tr
Fall Time
55
130
50
Turn-on Delay Time
Rise Time
V
GE = ±15V
VBus = 300V
IC = 150A
RG = 3.3Ω
Td(off) Turn-off Delay Time
300
Tf
Fall Time
70
0.85
1.5
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
V
V
GE = ±15V
Bus = 300V
Eon
Turn on Energy
mJ
mJ
A
IC = 150A
RG = 3.3Ω
4.1
Eoff
Isc
Turn off Energy
Short Circuit data
5.3
V
GE ≤15V ; VBus = 360V
750
tp ≤ 6µs ; Tj = 150°C
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
VRRM
IRM
IF
600
V
µA
A
Tj = 25°C
150
400
VR = 600V
Tj = 150°C
Tc = 100°C
Tj = 25°C
Tj = 150°C
150
1.6
1.5
IF = 150A
VGE = 0V
2
VF
Diode Forward Voltage
V
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
100
trr
Qrr
Er
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Energy
ns
µC
mJ
150
7.2
IF = 150A
VR = 300V
di/dt =2800A/µs
15.2
1.7
3.6
2 – 5
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APTGT150A60T3AG
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.25
0.42
°C/W
V
RthJC
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
VISOL
TJ
TSTG
TC
2500
-40
-40
-40
2.5
175
125
100
4.7
°C
Operating Case Temperature
Torque Mounting torque
Wt Package Weight
To heatsink
M4
N.m
g
110
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol
R25
∆R25/R25
B25/85
Characteristic
Resistance @ 25°C
Min Typ Max Unit
50
5
3952
4
kΩ
%
K
T25 = 298.15 K
%
∆B/B
TC=100°C
R25
T: Thermistor temperature
RT: Thermistor value at T
RT
=
⎡
⎤
⎥
⎦
⎛
⎞
1
1
⎜
⎟
⎟
exp B
−
⎢
25/ 85
⎜
T25
T
⎝
⎠
⎣
SP3 Package outline (dimensions in mm)
2 8
1 7
1
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
3 – 5
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APTGT150A60T3AG
Typical Performance Curve
Output Characteristics (VGE=15V)
TJ=25°C
TJ=125°C
Output Characteristics
300
300
250
200
150
100
50
VGE=19V
TJ = 150°C
250
VGE=13V
VGE=15V
200
150
TJ=150°C
100
VGE=9V
50
0
TJ=25°C
0
0
0.5
1
1.5
2
2.5
3
3.5
0
0.5
1
1.5
2
2.5
3
VCE (V)
VCE (V)
Energy losses vs Collector Current
Transfert Characteristics
300
250
200
150
100
50
10
8
VCE = 300V
Eoff
TJ=25°C
VGE = 15V
RG = 3.3Ω
TJ = 150°C
6
Er
4
TJ=125°C
Eon
TJ=150°C
2
TJ=25°C
0
0
0
50
100
150
200
250
300
5
6
7
8
9
10
11
12
I
C (A)
VGE (V)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
12
350
300
250
200
150
100
50
VCE = 300V
Eon
VGE =15V
10
IC = 150A
Eoff
Eoff
TJ = 150°C
8
6
4
2
0
VGE=15V
TJ=150°C
RG=3.3Ω
Er
Eon
0
0
5
10
15
20
25
0
100 200 300 400 500 600 700
CE (V)
V
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.3
IGBT
0.25
0.2
0.15
0.1
0.05
0
0.9
0.7
0.5
0.3
0.1
Single Pulse
0.01
0.05
0.00001
0.0001
0.001
0.1
1
10
Rectangular Pulse Duration in Seconds
4 – 5
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APTGT150A60T3AG
Operating Frequency vs Collector Current
Forward Characteristic of diode
300
120
100
80
60
40
20
0
VCE=300V
ZVS
D=50%
RG=3.3Ω
250
200
ZCS
TJ=150°C
Tc=85°C
150
TJ=125°C
100
TJ=150°C
Hard
switching
50
TJ=25°C
1.6
0
0
0.4
0.8
1.2
2
2.4
0
50
100
150
200
250
VF (V)
IC (A)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.5
0.4
0.3
0.2
0.1
0
Diode
0.9
0.7
0.5
0.3
0.1
Single Pulse
0.01
0.05
0.00001
0.0001
0.001
0.1
1
10
Rectangular Pulse Duration in Seconds
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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