APTGT150A170G [MICROSEMI]
Phase leg Trench + Field Stop IGBT Power Module; 相脚沟道+场截止IGBT功率模块
| 型号： | APTGT150A170G |
| 厂家： | 
Microsemi |
| 描述： | Phase leg Trench + Field Stop IGBT Power Module |
| 文件： | 总5页 (文件大小：246K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTGT150A170G
Phase leg
Trench + Field Stop IGBT®
VCES = 1700V
IC = 150A @ Tc = 80°C
Application
VBUS
•
•
•
•
Welding converters
Q1
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
G1
E1
OUT
Features
•
Trench + Field Stop IGBT® Technology
Q2
-
-
-
-
-
-
-
-
Low voltage drop
G2
Low tail current
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
E2
Low leakage current
0/VBUS
Avalanche energy rated
RBSOA and SCSOA rated
•
•
Kelvin emitter for easy drive
Very low stray inductance
-
-
Symmetrical design
M5 power connectors
G1
E1
•
High level of integration
VBUS
0/VBUS
OUT
Benefits
•
•
•
•
•
•
•
Stable temperature behavior
Very rugged
E2
G2
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
1700
Unit
VCES
Collector - Emitter Breakdown Voltage
V
TC = 25°C
TC = 80°C
TC = 25°C
250
150
300
±20
890
IC
Continuous Collector Current
A
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
V
W
TC = 25°C
RBSOA Reverse Bias Safe Operating Area
Tj = 125°C 300A @ 1600V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
1 - 5
www.microsemi.com
APTGT150A170G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 1700V
350
2.4
µA
Tj = 25°C
Tj = 125°C
2.0
2.4
5.8
VGE = 15V
VCE(sat) Collector Emitter Saturation Voltage
V
IC = 150A
VGE(th) Gate Threshold Voltage
IGES
VGE = VCE , IC = 3mA
VGE = 20V, VCE = 0V
5.0
6.5
600
V
nA
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Cies
Coes
Cres
Input Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
13.5
nF
Output Capacitance
0.55
0.44
370
40
650
180
400
50
Reverse Transfer Capacitance
Inductive Switching (25°C)
VGE = 15V
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
ns
VBus = 900V
IC = 150A
RG = 4.7Ω
Inductive Switching (125°C)
VGE = 15V
ns
VBus = 900V
800
IC = 150A
Tf
Fall Time
300
RG = 4.7Ω
VGE = 15V
Tj = 125°C
VBus = 900V
Eon
Turn-on Switching Energy
48
47
mJ
IC = 150A
Tj = 125°C
RG = 4.7Ω
Eoff
Turn-off Switching Energy
Diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1700
V
Tj = 25°C
VR=1700V
350
600
IRM
Maximum Reverse Leakage Current
µA
Tj = 125°C
IF
DC Forward Current
Tc = 80°C
150
1.8
1.9
385
490
38
62
17.5
35
A
V
Tj = 25°C
2.2
VF
Diode Forward Voltage
IF = 150A
Tj = 125°C
Tj = 25°C
Tj = 125°C
trr
Reverse Recovery Time
ns
IF = 150A
Tj = 25°C
VR = 900V
Qrr
Er
Reverse Recovery Charge
Reverse Recovery Energy
µC
mJ
Tj = 125°C
Tj = 25°C
Tj = 125°C
di/dt =1600A/µs
2 - 5
www.microsemi.com
APTGT150A170G
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.14
0.26
RthJC
Junction to Case Thermal Resistance
°C/W
V
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
3500
-40
-40
-40
3
150
125
100
5
3.5
280
°C
Operating Case Temperature
To heatsink
For terminals
M6
M5
Torque Mounting torque
N.m
g
2
Wt
Package Weight
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
3 - 5
www.microsemi.com
APTGT150A170G
Typical Performance Curve
Output Characteristics (VGE=15V)
Output Characteristics
300
250
200
150
100
50
300
250
200
150
100
50
TJ = 125°C
VGE=20V
TJ=25°C
VGE=13V
VGE=15V
TJ=125°C
VGE=9V
0
0
0
1
2
3
4
0
1
2
3
4
5
VCE (V)
V
CE (V)
Energy losses vs Collector Current
Transfert Characteristics
120
100
80
60
40
20
0
300
250
200
150
100
50
VCE = 900V
VGE = 15V
Eon
TJ=25°C
RG = 4.7Ω
TJ = 125°C
Eoff
Er
TJ=125°C
TJ=125°C
0
0
50
100 150 200 250 300
C (A)
5
6
7
8
9
10 11 12 13
I
V
GE (V)
Switching Energy Losses vs Gate Resistance
120
Reverse Bias Safe Operating Area
350
300
250
200
150
100
50
VCE = 900V
VGE =15V
100
Eon
IC = 150A
80
60
40
20
0
TJ = 125°C
Eoff
Er
VGE=15V
TJ=125°C
RG=4.7Ω
0
0
400
800
1200
CE (V)
1600
2000
0
5
10
15
20
25
30
V
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.16
0.14
0.12
0.1
IGBT
0.9
0.7
0.08
0.06
0.04
0.02
0
0.5
0.3
0.1
0.05
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
4 - 5
www.microsemi.com
APTGT150A170G
Forward Characteristic of diode
TJ=25°C
Operating Frequency vs Collector Current
20
15
10
5
300
250
200
150
100
50
VCE=900V
D=50%
RG=4.7Ω
TJ=125°C
TC=75°C
ZVS
ZCS
TJ=125°C
TJ=125°C
hard
switching
0
0
0
0.5
1
1.5
F (V)
2
2.5
3
0
40
80
120 160 200
C (A)
240
V
I
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.3
Diode
0.25
0.2
0.9
0.7
0.15
0.1
0.5
0.3
0.05
0
0.1
0.05
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
5 - 5
www.microsemi.com
相关型号：
APTGT150DA170D1G
Insulated Gate Bipolar Transistor, 280A I(C), 1700V V(BR)CES, N-Channel, MODULE-7
MICROSEMI
©2020 ICPDF网 联系我们和版权申明