APTGT150A60T [ADPOW]

Phase leg Trench + Field Stop IGBT Power Module; 相脚沟道+场截止IGBT功率模块
APTGT150A60T
型号: APTGT150A60T
厂家: ADVANCED POWER TECHNOLOGY    ADVANCED POWER TECHNOLOGY
描述:

Phase leg Trench + Field Stop IGBT Power Module
相脚沟道+场截止IGBT功率模块

晶体 晶体管 功率控制 双极性晶体管 局域网
文件: 总5页 (文件大小:279K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
APTGT150A60T  
Phase leg  
Trench + Field Stop IGBT®  
Power Module  
VCES = 600V  
IC = 150A @ Tc = 80°C  
Application  
VBUS  
NTC2  
Welding converters  
Switched Mode Power Supplies  
Uninterruptible Power Supplies  
Motor control  
Q1  
G1  
E1  
Features  
Trench + Field Stop IGBT® Technology  
OUT  
-
-
-
-
-
-
-
-
Low voltage drop  
Low tail current  
Q2  
Switching frequency up to 20 kHz  
Soft recovery parallel diodes  
Low diode VF  
G2  
E2  
Low leakage current  
Avalanche energy rated  
RBSOA and SCSOA rated  
0/VBUS  
NTC1  
Kelvin emitter for easy drive  
Very low stray inductance  
-
-
Symmetrical design  
Lead frames for power connections  
High level of integration  
Internal thermistor for temperature monitoring  
G2  
Benefits  
OUT  
OUT  
E2  
Stable temperature behavior  
Very rugged  
VBUS  
0/VBUS  
Solderable terminals for easy PCB mounting  
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Easy paralleling due to positive TC of VCEsat  
Low profile  
E1  
G1  
E2  
G2  
NTC2  
NTC1  
Absolute maximum ratings  
Symbol  
Parameter  
Max ratings  
Unit  
VCES  
Collector - Emitter Breakdown Voltage  
600  
225  
150  
350  
±20  
480  
V
TC = 25°C  
TC = 80°C  
TC = 25°C  
IC  
Continuous Collector Current  
A
ICM  
VGE  
PD  
Pulsed Collector Current  
Gate – Emitter Voltage  
Maximum Power Dissipation  
V
W
TC = 25°C  
Tj = 150°C  
RBSOA Reverse Bias Safe Operating Area  
300A @ 550V  
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.  
1 - 5  
APT website – http://www.advancedpower.com  
APTGT150A60T  
All ratings @ Tj = 25°C unless otherwise specified  
Electrical Characteristics  
Symbol Characteristic  
Test Conditions  
Min Typ Max Unit  
ICES  
Zero Gate Voltage Collector Current  
VGE = 0V, VCE = 600V  
250  
1.9  
µA  
Tj = 25°C  
Tj = 150°C  
1.5  
1.7  
5.8  
VGE =15V  
VCE(sat) Collector Emitter Saturation Voltage  
VGE(th) Gate Threshold Voltage  
IGES  
V
IC = 150A  
VGE = VCE , IC = 1.5 mA  
VGE = 20V, VCE = 0V  
5.0  
6.5  
400  
V
nA  
Gate – Emitter Leakage Current  
Dynamic Characteristics  
Symbol Characteristic  
Test Conditions  
Min Typ Max Unit  
Cies  
Coes  
Cres  
Input Capacitance  
VGE = 0V  
VCE = 25V  
f = 1MHz  
9200  
pF  
Output Capacitance  
580  
270  
115  
45  
225  
55  
Reverse Transfer Capacitance  
Inductive Switching (25°C)  
VGE = ±15V  
Td(on) Turn-on Delay Time  
Tr Rise Time  
Td(off) Turn-off Delay Time  
Tf Fall Time  
Td(on) Turn-on Delay Time  
Tr Rise Time  
Td(off) Turn-off Delay Time  
ns  
VBus = 300V  
IC = 150A  
RG = 6.8  
Inductive Switching (150°C)  
VGE = ±15V  
130  
50  
300  
70  
ns  
VBus = 300V  
IC = 150A  
Tf  
Fall Time  
RG = 6.8Ω  
Eon  
Eoff  
Turn on Energy  
Turn off Energy  
2.6  
5.3  
mJ  
Reverse diode ratings and characteristics  
Symbol Characteristic  
Test Conditions  
Min Typ Max Unit  
VRRM  
Maximum Peak Repetitive Reverse Voltage  
600  
V
Tj = 25°C  
VR=600V  
250  
500  
IRM  
Maximum Reverse Leakage Current  
µA  
Tj = 150°C  
IF(AV)  
VF  
Maximum Average Forward Current  
Diode Forward Voltage  
50% duty cycle  
IF = 150A  
Tc = 80°C  
Tj = 25°C  
Tj = 150°C  
Tj = 25°C  
Tj = 150°C  
Tj = 25°C  
150  
1.6  
A
V
2
VGE = 0V  
1.5  
130  
225  
6.9  
trr  
Reverse Recovery Time  
Reverse Recovery Charge  
ns  
IF = 150A  
VR = 300V  
di/dt =2100A/µs  
Qrr  
µC  
Tj = 150°C  
14.5  
2 - 5  
APT website – http://www.advancedpower.com  
APTGT150A60T  
Temperature sensor NTC (see application note APT0406 on www.advancedpower.com for more information).  
Symbol Characteristic  
R25 Resistance @ 25°C  
B25/85 T25 = 298.15 K  
Min Typ Max Unit  
50  
kΩ  
K
3952  
R25  
T: Thermistor temperature  
RT: Thermistor value at T  
RT  
=
1
1
T
25/85   
exp B  
T25  
Thermal and package characteristics  
Symbol Characteristic  
Min Typ Max Unit  
IGBT  
Diode  
0.31  
RthJC  
Junction to Case  
°C/W  
0.52  
VISOL  
TJ  
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz  
Operating junction temperature range  
Storage Temperature Range  
2500  
-40  
-40  
-40  
1.5  
V
175  
125  
100  
4.7  
°C  
TSTG  
TC  
Operating Case Temperature  
Torque Mounting torque  
Wt  
To Heatsink  
M5  
N.m  
g
Package Weight  
160  
Package outline (dimensions in mm)  
3 - 5  
APT website – http://www.advancedpower.com  
APTGT150A60T  
Typical Performance Curve  
Output Characteristics (VGE=15V)  
Output Characteristics  
300  
250  
200  
150  
100  
50  
300  
250  
200  
150  
100  
50  
VGE=19V  
TJ=25°C  
TJ = 150°C  
TJ=125°C  
VGE=13V  
VGE=15V  
TJ=150°C  
VGE=9V  
TJ=25°C  
0
0
0
0.5  
1
1.5  
VCE (V)  
2
2.5  
3
3.5  
0
0.5  
1
1.5  
VCE (V)  
2
2.5  
3
Energy losses vs Collector Current  
Transfert Characteristics  
300  
250  
200  
150  
100  
50  
10  
8
VCE = 300V  
Eoff  
TJ=25°C  
VGE = 15V  
RG = 6.8  
TJ = 150°C  
Eon  
Er  
6
4
TJ=125°C  
TJ=150°C  
2
Eon  
TJ=25°C  
10  
0
0
0
50  
100  
150  
C (A)  
200  
250  
300  
5
6
7
8
9
11  
12  
I
VGE (V)  
Switching Energy Losses vs Gate Resistance  
Reverse Bias Safe Operating Area  
20  
350  
300  
250  
200  
150  
100  
50  
VCE = 300V  
VGE =15V  
Eon  
16  
IC = 150A  
TJ = 150°C  
12  
8
Eoff  
Er  
Eoff  
VGE=15V  
TJ=150°C  
RG=6.8Ω  
Eon  
4
0
0
5
10  
15  
20  
25  
30  
35  
40  
0
100 200 300 400 500 600 700  
VCE (V)  
Gate Resistance (ohms)  
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration  
0.35  
0.3  
IGBT  
0.9  
0.7  
0.5  
0.3  
0.25  
0.2  
0.15  
0.1  
0.1  
0.05  
0.05  
0
Single Pulse  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Rectangular Pulse Duration in Seconds  
4 - 5  
APT website – http://www.advancedpower.com  
APTGT150A60T  
Operating Frequency vs Collector Current  
Forward Characteristic of diode  
300  
250  
200  
150  
100  
50  
120  
100  
80  
60  
40  
20  
0
VCE=300V  
D=50%  
RG=6.8  
ZCS  
TJ=150°C  
Tc=85°C  
ZVS  
TJ=125°C  
TJ=150°C  
Hard  
switching  
TJ=25°C  
0
0
0.4  
0.8  
1.2  
F (V)  
1.6  
2
2.4  
0
50  
100  
C (A)  
150  
200  
V
I
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
Diode  
0.9  
0.7  
0.5  
0.3  
0.1  
0.05  
Single Pulse  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Rectangular Pulse Duration in Seconds  
APT reserves the right to change, without notice, the specifications and information contained herein  
APT's products arecovered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522  
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.  
5 - 5  
APT website – http://www.advancedpower.com  

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