IXFA5N50P3 [LITTELFUSE]
Power Field-Effect Transistor,;
| 型号： | IXFA5N50P3 |
| 厂家： | 
LITTELFUSE |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总7页 (文件大小：330K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Polar3 TM HiPerFETTM
Power MOSFET
VDSS = 500V
ID25 = 5A
RDS(on) 1.65
IXFY5N50P3
IXFA5N50P3
IXFP5N50P3
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
TO-252 (IXFY)
G
S
D (Tab)
Symbol
VDSS
Test Conditions
Maximum Ratings
TO-263 (IXFA)
TJ = 25C to 150C
500
500
V
V
VDGR
TJ = 25C to 150C, RGS = 1M
VGSS
VGSM
Continuous
Transient
30
40
V
V
G
S
ID25
IDM
TC = 25C
5
A
A
D (Tab)
TC = 25C, Pulse Width Limited by TJM
12
TO-220 (IXFP)
IA
TC = 25C
TC = 25C
2.5
A
EAS
100
mJ
dv/dt
PD
IS IDM, VDD VDSS, TJ 150C
TC = 25C
35
V/ns
W
G
114
D
S
D (Tab)
TJ
-55 ... +150
150
C
C
C
G = Gate
S = Source
D
= Drain
Tab = Drain
TJM
Tstg
-55 ... +150
TL
TSOLD
Maximum Lead Temperature for Soldering
Plastic Body for 10s
300
260
°C
°C
Features
Md
Mounting Torque (TO-220)
1.13 / 10
Nm/lb.in
International Standard Packages
Fast Intrinsic Rectifier
Avalanche Rated
Low RDS(ON) and QG
Low Package Inductance
Weight
TO-252
TO-263
TO-220
0.35
2.50
3.00
g
g
g
Advantages
Symbol
Test Conditions
Characteristic Values
High Power Density
Easy to Mount
Space Savings
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 1mA
VDS = VGS, ID = 1mA
VGS = 30V, VDS = 0V
VDS = VDSS, VGS = 0V
500
V
V
3.0
5.0
Applications
100 nA
A
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
IDSS
5
TJ = 125C
50 μA
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
1.65
DS100454B(6/18)
© 2018 IXYS CORPORATION, All Rights Reserved
IXFY5N50P3 IXFA5N50P3
IXFP5N50P3
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
gfs
VDS = 20V, ID = 0.5 • ID25, Note 1
Gate Input Resistance
2.5
4.2
S
RGi
6.0
Ciss
Coss
Crss
370
50
3
pF
pF
pF
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
14
13
28
12
ns
ns
ns
ns
Resistive Switching Times
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 30 (External)
Qg(on)
Qgs
6.9
1.9
2.6
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
RthCS
1.10 C/W
C/W
TO-220
0.50
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
IS
VGS = 0V, Note1
5
A
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
20
1.4
A
V
trr
QRM
IRM
250
C
ns
IF = 2.5A, -di/dt = 100A/μs
0.33
5.30
VR = 100V
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2 6,759,692
6,710,463
6,727,585
7,005,734B2 7,157,338B2
7,063,975B2
6,771,478B2 7,071,537
IXFY5N50P3 IXFA5N50P3
IXFP5N50P3
Fig. 1. Output Characteristics @ TJ = 25oC
Fig. 2. Extended Output Characteristics @ TJ = 25oC
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
V
= 10V
8V
GS
V
= 10V
8V
GS
7V
6V
7V
6V
5V
5V
0
0
0
1
2
3
4
5
6
7
8
9
10
22
9
0
5
10
15
20
25
30
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 2.5A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125oC
5
4
3
2
1
0
3.8
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
V
= 10V
7V
GS
V
= 10V
GS
6V
I
= 5A
D
I
= 2.5A
D
5V
4V
2
4
6
8
10
12
14
16
18
20
-50
-25
0
25
50
75
100
125
150
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 2.5A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs. Case Temperature
3.5
3.0
2.5
2.0
1.5
1.0
0.5
V
= 10V
GS
5
4
3
2
1
0
T = 125oC
J
T = 25oC
J
1
2
3
4
5
6
7
8
-50
-25
0
25
50
75
100
125
150
ID - Amperes
TC - Degrees Centigrade
© 2018 IXYS CORPORATION, All Rights Reserved
IXFY5N50P3 IXFA5N50P3
IXFP5N50P3
Fig. 7. Input Admittance
Fig. 8. Transconductance
7
6
5
4
3
2
1
0
8
7
6
5
4
3
2
1
0
T
J
= - 40oC
25oC
T
J
= 125oC
25oC
125oC
- 40oC
0
1
2
3
4
5
6
7
8
3.0
0.3
0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
1.1
40
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
Fig. 10. Gate Charge
10
9
8
7
6
5
4
3
2
1
0
16
14
12
10
8
V
= 250V
DS
I
I
= 2.5A
D
G
= 10mA
6
T
J
= 125oC
T
J
= 25oC
4
2
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1
2
3
4
5
6
7
VSD - Volts
QG - NanoCoulombs
Fig. 11. Capacitance
Fig. 12. Forward-Bias Safe Operating Area
1,000
100
10
100
10
1
R
DS(on)
Limit
C
C
iss
25μs
100μs
oss
T
= 150oC
= 25oC
J
T
C
= 1 MHz
5
f
Single Pulse
C
rss
1ms
1
0.1
10
15
20
25
30
35
10
100
1,000
VDS - Volts
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFY5N50P3 IXFA5N50P3
IXFP5N50P3
Fig. 13. Maximum Transient Thermal Impedance
aaaaaa
2
1
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Second
© 2018 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_5N50P3(K2) 3-23-12
IXFY5N50P3 IXFA5N50P3
IXFP5N50P3
TO-252 Outline
TO-263 Outline
TO-220 Outline
A
E
A
E
oP
E1
C2
A1
L1
L2
H1
D1
Q
D
4
D2
E1
H
D
A1
1
3
2
D1
b
b2
L3
e
e
c
0.43 [11.0]
A2
EJECTOR
PIN
0
L1
L
0.34 [8.7]
0.66 [16.6]
A2
3X b
3X b2
e
c
1 - Gate
2,4 - Drain
3 - Source
0.20 [5.0]
0.10 [2.5]
0.12 [3.0]
0.06 [1.6]
e1
1 - Gate
2,4 - Drain
3 - Source
1 - Gate
2,4 - Drain
3 - Source
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
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