IXFA7N80P-TRL [IXYS]
Power Field-Effect Transistor,;
| 型号： | IXFA7N80P-TRL |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Power Field-Effect Transistor, 晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网 |
| 文件： | 总4页 (文件大小：146K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PolarTM HiPerFETTM
Power MOSFET
VDSS = 800V
ID25 = 7A
IXFA7N80P
IXFP7N80P
RDS(on) ≤ 1.44Ω
trr
≤ 250ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
TO-263 AA (IXFA)
G
S
Symbol
VDSS
Test Conditions
Maximum Ratings
D (Tab)
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
800
800
V
V
VDGR
TO-220AB (IXFP)
VGSS
VGSM
Continuous
Transient
±30
±40
V
V
ID25
IDM
TC = 25°C
7
A
A
TC = 25°C, Pulse Width Limited by TJM
18
G
D
S
D (Tab)
= Drain
IA
TC = 25°C
TC = 25°C
4
A
EAS
300
mJ
G = Gate
D
dv/dt
PD
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
10
V/ns
W
S = Source
Tab = Drain
200
TJ
-55 ... +150
150
°C
°C
°C
Features
TJM
Tstg
z International Standard Packages
z Dynamic dv/dt Rating
z Avalanche Rated
z Fast Intrinsic Rectifier
z Low QG
-55 ... +150
TL
Tsold
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 Seconds
300
260
°C
°C
Md
Mounting Torque (TO-220)
1.13 / 10
Nm/lb.in.
Weight
TO-263
TO-220
2.5
3.0
g
g
Advantages
z
Easy to Mount
Space Savings
z
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min. Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 250μA
VDS = VGS, ID = 1mA
VGS = ± 30V, VDS = 0V
VDS = VDSS, VGS = 0V
800
3.0
V
V
Applications
5.0
z DC-DC Converters
z Battery Chargers
±100 nA
z Switch-Mode and Resonant-Mode
Power Supplies
IDSS
25 μA
z Uninterrupted Power Supplies
z AC Motor Drives
TJ = 125°C
VGS = 10V, ID = 0.5 • ID25, Notes 1, 2
500 μA
RDS(on)
1.44
Ω
z High Speed Power Switching
Applications
DS99597F(04/10)
© 2010 IXYS CORPORATION, All Rights Reserved
IXFA7N80P
IXFP7N80P
Symbol
Test Conditions
Characteristic Values
Min. Typ. Max.
TO-263 Outline
(TJ = 25°C, Unless Otherwise Specified)
gfs
VDS = 20V, ID = 0.5 • ID25, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
5.0 9.5
S
Ciss
Coss
Crss
1800
128
9.5
pF
pF
pF
td(on)
tr
td(off)
tf
28
32
55
24
ns
ns
ns
ns
Resistive Switching Times
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 10Ω (External)
Qg(on)
Qgs
32
12
9
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
RthCH
0.62 °C/W
°C/W
TO-220
0.50
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min. Typ.
Max.
IS
VGS = 0V
7
A
A
V
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
28
TO-220 Outline
1.5
trr
250 ns
IF = 7A, VGS = 0V
IRM
QRM
3
A
-di/dt = 100A/μs
VR = 100V
300
nC
Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. On through-hole packages, RDS(on) Kelvin test contact
location must be 5mm or less from the package body.
Pins: 1 - Gate
3 - Source
2 - Drain
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,727,585
7,005,734 B2 7,157,338B2
7,063,975 B2
6,534,343
6,583,505
6,710,405 B2 6,759,692
6,710,463
6,771,478 B2 7,071,537
IXFA7N80P
IXFP7N80P
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
16
14
12
10
8
7
6
5
4
3
2
1
0
VGS = 10V
VGS = 10V
6V
6V
6
4
5V
2
5V
0
0
1
2
3
4
5
6
7
8
9
10
0
5
10
15
20
25
30
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 3.5A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
7
6
5
4
3
2
1
0
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
VGS = 10V
6V
VGS = 10V
I D = 7A
5V
I D = 3.5A
-50
-25
0
25
50
75
100
125
150
0
2
4
6
8
10
12
14
16
18
20
22
24
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 3.5A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
8
7
6
5
4
3
2
1
0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
VGS = 10V
TJ = 125ºC
TJ = 25ºC
0
2
4
6
8
10
12
14
16
-50
-25
0
25
50
75
100
125
150
TC - Degrees Centigrade
ID - Amperes
© 2010 IXYS CORPORATION, All Rights Reserved
IXFA7N80P
IXFP7N80P
Fig. 8. Transconductance
Fig. 7. Input Admittance
8
7
6
5
4
3
2
1
0
18
16
14
12
10
8
TJ = - 40ºC
25ºC
125ºC
25ºC
- 40ºC
TJ = 125ºC
6
4
2
0
3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0 5.2 5.4 5.6 5.8 6.0
VGS - Volts
0
1
2
3
4
5
6
7
8
9
ID - Amperes
Fig. 10. Gate Charge
Fig. 9. Forward Voltage Drop of Intrinsic Diode
16
10
9
8
7
6
5
4
3
2
1
0
VDS = 400V
I D = 3.5A
14
12
10
8
I G = 10mA
TJ = 125ºC
6
TJ = 25ºC
4
2
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0
5
10
15
20
25
30
35
VSD - Volts
QG - NanoCoulombs
Fig. 12. Maximum Transient Thermal Impedance
Fig. 11. Capacitance
1
10,000
1,000
100
10
= 1 MHz
f
C
iss
0.1
C
C
oss
rss
1
0.01
0
5
10
15
20
25
30
35
40
0.00001
0.0001
0.001
0.01
0.1
1
10
VDS - Volts
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: IXF_7N80P (4J)4-19-10-A
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Power Field-Effect Transistor, 38A I(D), 1000V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS264, 3 PIN
IXYS
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