IXFB100N50P [IXYS]
PolarHV HiPerFET Power MOSFET; PolarHV HiPerFET功率MOSFET
| 型号： | IXFB100N50P |
| 厂家： | 
IXYS CORPORATION |
| 描述： | PolarHV HiPerFET Power MOSFET |
| 文件： | 总5页 (文件大小：173K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PolarHVTM HiPerFET
Power MOSFET
IXFB 100N50P
VDSS = 500 V
ID25 = 100 A
RDS(on) ≤ 49 mΩ
N-Channel Enhancement Mode
Avalanche Rated
trr
≤ 200 ns
Fast Intrinsic Diode
Symbol
Test Conditions
Maximum Ratings
PLUS264TM (IXFB)
VDSS
VDGR
TJ = 25° C to 150° C
500
500
V
V
TJ = 25° C to 150° C; RGS = 1 MΩ
VGSS
VGSM
Continuous
Transient
30
40
V
V
(TAB)
G
D
S
ID25
IDRMS
IDM
TC =25° C
External lead current limit
TC = 25° C, pulse width limited by TJM
100
75
250
A
A
A
G = Gate
S = Source
D = Drain
TAB = Drain
IAR
TC =25° C
100
A
EAR
EAS
TC =25° C
TC =25° C
100
5
mJ
J
Features
dv/dt
PD
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS
TJ ≤150° C, RG = 2 Ω
,
20
V/ns
l
International standard packages
Fast recovery diode
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
l
l
TC =25° C
1250
W
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
l
TL
TSOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
300
260
°C
°C
Advantages
FC
Mounting force
30..120/7.5...2.7
10
N/lb
g
l
Plus 264TM package for clip or spring
Space savings
High power density
l
Weight
l
Symbol
Test Conditions
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min. Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0 V, ID = 3 mA
VDS = VGS, ID = 8 mA
VGS = 30 VDC, VDS = 0
500
V
V
3.0
5.0
200
nA
IDSS
VDS = VDSS
VGS = 0 V
25
2000
µA
µA
TJ = 125° C
RDS(on)
VGS = 10 V, ID = 0.5 ID25, Note 1
49 mΩ
DS99496E(01/06)
© 2006 IXYS All rights reserved
IXFB 100N50P
Symbol
gfs
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
PLUS264TM (IXFB) Outline
VDS = 20 V; ID = 0.5 ID25, Note 1
50
80
S
Ciss
Coss
Crss
20
1700
140
nF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
36
29
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID =0.5 ID25
RG = 1 Ω (External)
110
26
Qg(on)
Qgs
240
96
nC
nC
nC
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
78
RthJC
RthCS
0.10 ° C/W
° C/W
0.13
Source-Drain Diode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
Symbol
Test Conditions
IS
VGS = 0 V
100
250
1.5
A
ISM
VSD
trr
Repetitive
A
V
IF = IS, VGS = 0 V, Note 1
IF = 25A, -di/dt = 100 A/µs
200
ns
QRM
IRM
VR = 100V
0.6
6.0
µC
A
Notes:
1. Pulse test, t ≤300 µs, duty cycle d≤ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,727,585
6,534,343
6,583,505
6,710,405B2 6,759,692
6,710,463 6,771,478 B2
IXFB 100N50P
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
100
90
80
70
60
50
40
30
20
10
0
220
200
180
160
140
120
100
80
V
= 10V
8V
V
= 10V
9V
GS
GS
8V
7V
6V
7V
6V
60
40
20
5V
0
0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
0
2
4
6
8
10 12 14 16 18 20 22 24 26
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 50A Value
vs. Junction Temperature
Fig. 3. Output Characteristics
@ 125ºC
100
90
80
70
60
50
40
30
20
10
0
3.1
2.8
2.5
2.2
1.9
1.6
1.3
1
V
= 10V
GS
8V
7V
V
= 10V
GS
I
= 100A
D
6V
I
= 50A
D
5V
0.7
0.4
-50
-25
0
25
50
75
100
125
150
1
2
3
4
5
6
7
8
9
10
11
TJ - Degrees Centigrade
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 50A Value
vs. Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
90
80
70
60
50
40
30
20
10
0
3
2.8
2.6
2.4
2.2
2
V
= 10V
GS
External Lead Current Limit
T
J
= 125ºC
1.8
1.6
1.4
1.2
1
T
J
= 25ºC
0.8
20
40
60
80 100 120 140 160 180 200 220
ID - Amperes
-50
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade
© 2006 IXYS All rights reserved
IXFB 100N50P
Fig. 8. Transconductance
Fig. 7. Input Admittance
160
140
120
100
80
150
135
120
105
90
T
J
= - 40ºC
T
J
= 125ºC
25ºC
125ºC
25ºC
- 40ºC
75
60
60
45
40
30
20
15
0
0
4
4.5
5
5.5
6
6.5
7
7.5
1.6
40
0
20
40
60
80
100
120
140
160
180
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
300
250
200
150
100
50
10
9
8
7
6
5
4
3
2
1
0
V
= 250V
DS
I
I
= 50A
D
G
= 10mA
T
J
= 125ºC
T
= 25ºC
J
0
0.4
0.6
0.8
1
1.2
1.4
0
25
50
75
100 125 150 175 200 225 250
VSD - Volts
QG - NanoCoulombs
Fig. 12. Forward-Bias Safe Operating Area
Fig. 11. Capacitance
100,000
10,000
1,000
100
1,000
100
10
f = 1 MHz
R
Limit
DS(on)
C
iss
25µs
100µs
1ms
C
C
oss
rss
10ms
DC
T
T
= 150ºC
= 25ºC
J
C
1
0
5
10
15
20
25
30
35
10
100
1000
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
VDS - Volts
IXFB 100N50P
Fig. 13. Maximum Transient Thermal Resistance
1.000
0.100
0.010
0.001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2006 IXYS All rights reserved
相关型号：
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