IXFB100N50Q3 [IXYS]
HiperFET Power MOSFET Q3-Class; HiperFET功率MOSFET Q3级
| 型号： | IXFB100N50Q3 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiperFET Power MOSFET Q3-Class |
| 文件： | 总5页 (文件大小：142K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Information
HiperFETTM
Power MOSFET
Q3-Class
VDSS = 500V
ID25 = 100A
RDS(on) ≤ 49mΩ
IXFB100N50Q3
trr
≤ 250ns
N-Channel Enhancement Mode
Fast Intrinsic Rectifier
PLUS264TM
Symbol
VDSS
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
500
500
V
V
G
VDGR
D
S
VGSS
VGSM
Continuous
Transient
±30
±40
V
V
Tab
ID25
IDM
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
100
300
A
A
G = Gate
D
= Drain
S
= Source
Tab = Drain
IA
TC = 25°C
TC = 25°C
100
5
A
J
EAS
Features
dv/dt
PD
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
50
V/ns
W
z
Low Intrinsic Gate Resistance
Low Package Inductance
Fast Intrinsic Rectifier
Low RDS(on) and QG
1560
z
z
z
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
TL
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
300
°C
°C
Advantages
TSOLD
FC
260
30..120/6.7..27
10
Mounting Force
N/lb.
g
z
High Power Density
Easy to Mount
Space Savings
z
Weight
z
Applications
z
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
z
Symbol
Test Conditions
Characteristic Values
z
(TJ = 25°C Unless Otherwise Specified)
Min.
500
3.5
Typ.
Max.
Power Supplies
DC Choppers
Temperature and Lighting Controls
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 3mA
VDS = VGS, ID = 8mA
VGS = ±30V, VDS = 0V
VDS = VDSS, VGS = 0V
V
V
z
z
6.5
±200 nA
IDSS
50 μA
TJ = 125°C
2.5 mA
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
49 mΩ
DS100309(03/11)
© 2011 IXYS CORPORATION, All Rights Reserved
IXFB100N50Q3
Symbol
Test Conditions
Characteristic Values
PLUS264TM (IXFB) Outline
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 20V, ID = 0.5 • ID25, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
Gate Input Resistance
40
65
S
Ciss
Coss
Crss
13.8
1690
177
nF
pF
pF
RGi
0.12
40
Ω
td(on)
ns
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 0.5Ω (External)
tr
20
50
ns
ns
td(off)
tf
15
ns
Qg(on)
Qgs
255
110
115
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
RthCS
0.08 °C/W
°C/W
0.13
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
100
400
1.5
IS
VGS = 0V
A
A
V
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
trr
QRM
IRM
250 ns
IF = 50A, -di/dt = 200A/μs
3.5
30.0
μC
A
VR = 100V, VGS = 0V
Note
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXFB100N50Q3
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
100
90
80
70
60
50
40
30
20
10
0
VGS = 10V
VGS = 10V
9V
200
160
120
80
9V
8V
8V
7V
6V
40
7V
6V
0
0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0
5
10
15
20
25
30
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 50A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
100
90
80
70
60
50
40
30
20
10
0
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
VGS = 10V
VGS = 10V
8V
7V
I D = 100A
I D = 50A
6V
5V
1
2
3
4
5
6
7
8
9
10
11
-50
-25
0
25
50
75
100
125
150
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 50A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
120
100
80
60
40
20
0
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
VGS = 10V
TJ = 125ºC
TJ = 25ºC
-50
-25
0
25
50
75
100
125
150
20
40
60
80
100
120
140
160
180
200
220
ID - Amperes
TC - Degrees Centigrade
© 2011 IXYS CORPORATION, All Rights Reserved
IXFB100N50Q3
Fig. 7. Input Admittance
Fig. 8. Transconductance
110
100
90
80
70
60
50
40
30
20
10
0
140
120
100
80
TJ = - 40ºC
25ºC
125ºC
TJ = 125ºC
25ºC
60
- 40ºC
40
20
0
0
20
40
60
80
100
120
140
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
VGS - Volts
ID - Amperes
Fig. 10. Gate Charge
Fig. 9. Forward Voltage Drop of Intrinsic Diode
16
14
12
10
8
300
250
200
150
100
50
VDS = 250V
I D = 50A
I G = 10mA
6
TJ = 125ºC
TJ = 25ºC
4
2
0
0
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6
VSD - Volts
0
50
100
150
200
250
300
350
QG - NanoCoulombs
Fig. 12. Forward-Bias Safe Operating Area
Fig. 11. Capacitance
1000
100
10
100000
10000
1000
= 1 MHz
f
RDS(on) Limit
C
iss
25µs
100µs
C
oss
TJ = 150ºC
TC = 25ºC
C
rss
Single Pulse
1ms
100
1
0
5
10
15
20
25
30
35
40
10
100
1,000
VDS - Volts
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFB100N50Q3
Fig. 13. Maximum Transient Thermal Impedance
0.1
0.01
0.001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2011 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_100N50Q3(Q9)02-24-11
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