IXFB110N60P3 [IXYS]
Polar3 HiPerFET Power MOSFET; Polar3 HiPerFET功率MOSFET
| 型号： | IXFB110N60P3 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Polar3 HiPerFET Power MOSFET |
| 文件： | 总5页 (文件大小：148K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Information
Polar3TM HiPerFETTM
Power MOSFET
VDSS = 600V
ID25 = 110A
RDS(on) ≤ 56mΩ
IXFB110N60P3
trr
≤ 250ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
PLUS264TM
Symbol
VDSS
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
600
600
V
V
G
VDGR
D
S
Tab
VGSS
VGSM
Continuous
Transient
±30
±40
V
V
G = Gate
D
= Drain
ID25
IDM
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
110
275
A
A
S
= Source
Tab = Drain
IA
EAS
TC = 25°C
TC = 25°C
55
3
A
J
dv/dt
PD
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
35
V/ns
W
Features
1890
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
z
Avalanche Rated
z
z
z
Low Package Inductance
Fast Intrinsic Rectifier
Low RDS(on) and QG
TL
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
300
°C
°C
TSOLD
FC
260
30..120/6.7..27
10
Mounting Force
N/lb.
g
Advantages
z
Weight
Easy to Mount
Space Savings
z
Applications
z DC-DC Converters
z Battery Chargers
z Switch-Mode and Resonant-Mode
Power Supplies
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min.
600
3.0
Typ.
Max.
z Uninterrupted Power Supplies
z AC Motor Drives
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 3mA
VDS = VGS, ID = 8mA
VGS = ±30V, VDS = 0V
VDS = VDSS, VGS = 0V
V
V
z High Speed Power Switching
Applications
5.0
±200 nA
IDSS
50 μA
TJ = 125°C
6 mA
RDS(on)
VGS = 10V, ID = 0.5 • IDSS, Note 1
56 mΩ
DS100314(03/11)
© 2011 IXYS CORPORATION, All Rights Reserved
IXFB110N60P3
Symbol
Test Conditions
Characteristic Values
PLUS264TM (IXFB) Outline
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 20V, ID = 55A, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
Gate Input Resistance
65
105
S
Ciss
Coss
Crss
18
1650
5.5
nF
pF
pF
RGi
1.0
63
Ω
td(on)
ns
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS
RG = 1Ω (External)
tr
19
77
ns
ns
td(off)
tf
11
ns
Qg(on)
Qgs
245
83
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS
Qgd
53
RthJC
RthCS
0.066 °C/W
°C/W
0.13
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
110
440
1.5
IS
VGS = 0V
A
A
V
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = 100A, VGS = 0V, Note 1
trr
QRM
IRM
250 ns
IF = 55A, -di/dt = 100A/μs
1.6
14.0
μC
A
VR = 100V, VGS = 0V
Note
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXFB110N60P3
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
220
200
180
160
140
120
100
80
VGS = 10V
8V
VGS = 10V
8V
100
80
60
40
20
0
7V
7V
6V
6V
5V
60
40
20
5V
0
0
1
2
3
4
5
6
0
5
10
15
20
25
150
150
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 55A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
VGS = 10V
7V
VGS = 10V
100
80
60
40
20
0
I D = 110A
6V
I D = 55A
5V
4V
0
2
4
6
8
10
12
14
-50
-25
0
25
50
75
100
125
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 55A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
120
100
80
60
40
20
0
3.0
2.6
2.2
1.8
1.4
1.0
0.6
VGS = 10V
TJ = 125ºC
TJ = 25ºC
0
20
40
60
80
100
120
140
160
180
200
220
-50
-25
0
25
50
75
100
125
ID - Amperes
TC - Degrees Centigrade
© 2011 IXYS CORPORATION, All Rights Reserved
IXFB110N60P3
Fig. 7. Input Admittance
Fig. 8. Transconductance
180
160
140
120
100
80
200
180
160
140
120
100
80
TJ = - 40ºC
TJ = 125ºC
25ºC
- 40ºC
25ºC
125ºC
60
60
40
40
20
20
0
0
0
20
40
60
80
100
120
140
160
180
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
1.1
40
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
Fig. 10. Gate Charge
160
10
9
8
7
6
5
4
3
2
1
0
VDS = 300V
I D = 55A
140
120
100
80
I G = 10mA
60
TJ = 125ºC
40
TJ = 25ºC
20
0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
50
100
150
200
250
VSD - Volts
QG - NanoCoulombs
Fig. 12. Forward-Bias Safe Operating Area
Fig. 11. Capacitance
1000
100
10
100,000
10,000
1,000
100
C
iss
RDS(on) Limit
100µs
C
oss
TJ = 150ºC
C
10
rss
TC = 25ºC
1ms
Single Pulse
= 1 MHz
5
f
1
1
0
10
15
20
25
30
35
10
100
1,000
VDS - Volts
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFB110N60P3
Fig. 13. Maximum Transient Thermal Impedance
0.1
0.01
0.001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2011 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_110N60P3(K9)03-16-11
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