IXFA7N60P3 [LITTELFUSE]
Power Field-Effect Transistor,;
| 型号： | IXFA7N60P3 |
| 厂家： | 
LITTELFUSE |
| 描述： | Power Field-Effect Transistor, 局域网 开关 脉冲 晶体管 |
| 文件： | 总6页 (文件大小：250K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Polar3 TM HiPerFETTM
Power MOSFET
VDSS = 600V
ID25 = 7A
RDS(on) 1.15
IXFA7N60P3
IXFP7N60P3
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
TO-263 (IXFA)
G
S
D (Tab)
Symbol
VDSS
Test Conditions
Maximum Ratings
TO-220 (IXFP)
TJ = 25C to 150C
600
600
V
V
VDGR
TJ = 25C to 150C, RGS = 1M
VGSS
VGSM
Continuous
Transient
30
40
V
V
G
D
ID25
IDM
TC = 25C
7
A
A
S
D (Tab)
TC = 25C, Pulse Width Limited by TJM
16
G = Gate
S = Source
D
= Drain
IA
TC = 25C
TC = 25C
3.5
A
Tab = Drain
EAS
400
mJ
dv/dt
PD
IS IDM, VDD VDSS, TJ 150C
TC = 25C
35
V/ns
W
180
Features
TJ
-55 ... +150
150
C
C
C
TJM
Tstg
International Standard Packages
Fast Intrinsic Rectifier
Avalanche Rated
-55 ... +150
TL
TSOLD
Maximum Lead Temperature for Soldering
Plastic Body for 10s
300
260
°C
°C
Low RDS(ON) and QG
Low Package Inductance
Md
Mounting Torque (TO-220)
1.13 / 10
Nm/lb.in.
Advantages
Weight
TO-263
TO-220
2.5
3.0
g
g
High Power Density
Easy to Mount
Space Savings
Applications
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
Switch-Mode and Resonant-Mode
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 1mA
VDS = VGS, ID = 1mA
VGS = 30V, VDS = 0V
VDS = VDSS, VGS = 0V
600
V
V
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
3.0
5.0
100 nA
Robotics and Servo Controls
IDSS
10 A
TJ = 125C
125 μA
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
1.15
DS100428B(6/18)
© 2018 IXYS CORPORATION, All Rights Reserved
IXFA7N60P3
IXFP7N60P3
Symbol
Test Conditions
Characteristic Values
TO-263 Outline
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
gfs
VDS = 20V, ID = 0.5 • ID25, Note 1
Gate Input Resistance
4
7
S
RGi
6.0
Ciss
Coss
Crss
705
84
pF
pF
pF
VGS = 0V, VDS = 25V, f = 1MHz
4.5
Pins:
td(on)
tr
td(off)
tf
13
12
27
10
ns
ns
ns
ns
Resistive Switching Times
1 - Gate
2,4 - Drain
3 - Source
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 10 (External)
Qg(on)
Qgs
13.3
3.7
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
5.1
RthJC
RthCS
0.69 C/W
C/W
TO-220
0.50
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
IS
VGS = 0V, Note1
7
A
A
TO-220 Outline
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
28
1.4
A
E
oP
A1
V
H1
Q
D2
D
trr
QRM
IRM
250
C
ns
IF = 7A, -di/dt = 25A/μs
0.36
2.60
D1
VR = 100V
E1
A
A2
EJECTOR
L1
L
e
c
3X b
3X b2
e1
Note 1. Pulse test, t 300s, duty cycle, d 2%.
1 - Gate
2,4 - Drain
3 - Source
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2 6,759,692
6,710,463
6,727,585
7,005,734B2 7,157,338B2
7,063,975B2
6,771,478B2 7,071,537
IXFA7N60P3
IXFP7N60P3
Fig. 2. Extended Output Characteristics @ TJ = 25oC
Fig. 1. Output Characteristics @ TJ = 25oC
7
6
5
4
3
2
1
0
V
= 10V
8V
GS
V
= 10V
8V
14
12
10
8
GS
7V
6V
5V
7V
6
6V
5V
4
2
0
0
1
2
3
4
5
6
7
8
9
0
5
10
15
20
25
30
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 3.5A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125oC
7
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
V
= 10V
7V
GS
V
= 10V
GS
6
5
4
3
2
1
0
6V
I
= 7A
D
I
= 3.5A
D
5V
4V
0
2
4
6
8
10
12
14
16
18
20
-50
-25
0
25
50
75
100
125
150
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 3.5A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs. Case Temperature
8
7
6
5
4
3
2
1
0
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
V
= 10V
GS
T
J
= 125oC
T
J
= 25oC
0
2
4
6
8
10
12
14
-50
-25
0
25
50
75
100
125
150
ID - Amperes
TC - Degrees Centigrade
© 2018 IXYS CORPORATION, All Rights Reserved
IXFA7N60P3
IXFP7N60P3
Fig. 7. Input Admittance
Fig. 8. Transconductance
9
8
7
6
5
4
3
2
1
0
14
12
10
8
T
J
= - 40oC
25oC
125oC
6
T
J
= 125oC
25oC
- 40oC
4
2
0
0
1
2
3
4
5
6
7
8
9
10
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
Fig. 10. Gate Charge
20
18
16
14
12
10
8
10
9
8
7
6
5
4
3
2
1
0
V
= 300V
DS
I
I
= 3.5A
D
G
= 10mA
T
J
= 125oC
6
T
J
= 25oC
4
2
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
2
4
6
8
10
12
14
VSD - Volts
QG - NanoCoulombs
Fig. 11. Capacitance
Fig. 12. Forward-Bias Safe Operating Area
10,000
1,000
100
10
100
10
1
= 1 MHz
f
C
iss
R
Limit
DS(on)
25μs
100μs
C
C
oss
T = 150oC
J
T
C
= 25oC
Single Pulse
rss
1ms
1
0.1
0
5
10
15
20
25
30
35
40
10
100
1,000
VDS - Volts
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFA7N60P3
IXFP7N60P3
Fig. 13. Maximum Transient Thermal Impedance
1
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Second
© 2018 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_7N60P3(K3)12-08-11
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
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