IXFA7N60P3 [IXYS]
Power Field-Effect Transistor, 7A I(D), 600V, 1.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263AA, 3 PIN;
| 型号： | IXFA7N60P3 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Power Field-Effect Transistor, 7A I(D), 600V, 1.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263AA, 3 PIN 局域网 开关 脉冲 晶体管 |
| 文件： | 总5页 (文件大小：158K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Technical Information
Polar3 TM HiPerFETTM
Power MOSFETs
VDSS = 600V
ID25 = 7A
RDS(on) 1.15
IXFA7N60P3
IXFP7N60P3
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
TO-263 AA (IXFA)
G
S
D (Tab)
Symbol
VDSS
Test Conditions
Maximum Ratings
TJ = 25C to 150C
600
600
V
V
TO-220AB (IXFP)
VDGR
TJ = 25C to 150C, RGS = 1M
VGSS
VGSM
Continuous
Transient
30
40
V
V
G
ID25
IDM
TC = 25C
7
A
A
D
D (Tab)
S
TC = 25C, Pulse Width Limited by TJM
16
G = Gate
S = Source
D
= Drain
IA
TC = 25C
TC = 25C
3.5
A
Tab = Drain
EAS
400
mJ
dv/dt
PD
IS IDM, VDD VDSS, TJ 150C
TC = 25C
35
V/ns
W
180
Features
TJ
-55 ... +150
150
C
C
C
TJM
Tstg
International Standard Packages
Fast Intrinsic Rectifier
Avalanche Rated
-55 ... +150
TL
TSOLD
Maximum Lead Temperature for Soldering
Plastic Body for 10s
300
260
°C
°C
Low RDS(ON) and QG
Low Package Inductance
Md
Mounting Torque (TO-220)
1.13 / 10
Nm/lb.in.
Advantages
Weight
TO-263
TO-220
2.5
3.0
g
g
High Power Density
Easy to Mount
Space Savings
Applications
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
Switch-Mode and Resonant-Mode
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 1mA
VDS = VGS, ID = 1mA
VGS = 30V, VDS = 0V
VDS = VDSS, VGS = 0V
600
V
V
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
3.0
5.0
100 nA
Robotics and Servo Controls
IDSS
10 A
TJ = 125C
125 μA
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
1.15
DS100428A(11/13)
© 2013 IXYS CORPORATION, All Rights Reserved
IXFA7N60P3
IXFP7N60P3
Symbol
Test Conditions
Characteristic Values
TO-263 Outline
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
gfs
VDS = 20V, ID = 0.5 • ID25, Note 1
Gate Input Resistance
4
7
S
RGi
6.0
Ciss
Coss
Crss
705
84
pF
pF
pF
VGS = 0V, VDS = 25V, f = 1MHz
4.5
Pins:
td(on)
tr
td(off)
tf
13
12
27
10
ns
ns
ns
ns
Resistive Switching Times
1 - Gate
2,4 - Drain
3 - Source
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 10 (External)
Qg(on)
Qgs
13.3
3.7
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
5.1
RthJC
RthCS
0.69 C/W
C/W
TO-220
0.50
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
IS
VGS = 0V, Note1
7
A
A
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
28
1.4
TO-220 Outline
V
trr
QRM
IRM
250
C
ns
IF = 7A, -di/dt = 25A/μs
0.36
2.60
VR = 100V
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.
Pins: 1 - Gate
3 - Source
2 - Drain
PRELIMANARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2 6,759,692
6,710,463
6,727,585
7,005,734B2 7,157,338B2
7,063,975B2
6,771,478B2 7,071,537
IXFA7N60P3
IXFP7N60P3
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
Fig. 1. Output Characteristics @ TJ = 25ºC
7
6
5
4
3
2
1
0
V
= 10V
8V
GS
14
12
10
8
V
= 10V
8V
GS
7V
6V
5V
7V
6
6V
5V
4
2
0
0
1
2
3
4
5
6
7
8
9
0
5
10
15
20
25
30
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 3.5A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
7
6
5
4
3
2
1
0
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
V
= 10V
7V
GS
V
= 10V
GS
6V
I
= 7A
D
I
= 3.5A
D
5V
4V
0
2
4
6
8
10
12
14
16
18
20
-50
-25
0
25
50
75
100
125
150
VDS - Volts
TJ - Degrees Centigrade
Fig. 6. Maximum Drain Current vs.
Case Temperature
Fig. 5. RDS(on) Normalized to ID = 3.5A Value vs.
Drain Current
8
7
6
5
4
3
2
1
0
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
V
= 10V
GS
T = 125ºC
J
T = 25ºC
J
0
2
4
6
8
10
12
14
-50
-25
0
25
50
75
100
125
150
ID - Amperes
TC - Degrees Centigrade
© 2013 IXYS CORPORATION, All Rights Reserved
IXFA7N60P3
IXFP7N60P3
Fig. 7. Input Admittance
Fig. 8. Transconductance
9
8
7
6
5
4
3
2
1
0
14
12
10
8
T
= - 40ºC
J
25ºC
125ºC
6
T
J
= 125ºC
25ºC
4
- 40ºC
2
0
0
1
2
3
4
5
6
7
8
9
10
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
Fig. 10. Gate Charge
20
18
16
14
12
10
8
10
9
8
7
6
5
4
3
2
1
0
V
= 300V
DS
I
I
= 3.5A
D
G
= 10mA
T
J
= 125ºC
6
T
J
= 25ºC
4
2
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
2
4
6
8
10
12
14
VSD - Volts
QG - NanoCoulombs
Fig. 11. Capacitance
Fig. 12. Forward-Bias Safe Operating Area
10,000
1,000
100
10
100
10
1
= 1 MHz
f
C
iss
R
Limit
DS(on)
25µs
100µs
C
C
oss
T = 150ºC
J
T
= 25ºC
C
Single Pulse
rss
1ms
1
0.1
0
5
10
15
20
25
30
35
40
10
100
1,000
VDS - Volts
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFA7N60P3
IXFP7N60P3
Fig. 13. Maximum Transient Thermal Impedance
1
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Second
© 2013 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_7N60P3(K3)12-08-11
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