IXFA7N100P [LITTELFUSE]
Power Field-Effect Transistor, 7A I(D), 1000V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN;
| 型号： | IXFA7N100P |
| 厂家： | 
LITTELFUSE |
| 描述： | Power Field-Effect Transistor, 7A I(D), 1000V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN 局域网 开关 脉冲 晶体管 |
| 文件： | 总7页 (文件大小：337K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Polar TM HiPerFETTM
Power MOSFET
VDSS = 1000V
ID25 = 7A
RDS(on) 1.9
IXFA7N100P
IXFP7N100P
IXFH7N100P
N-Channel Enhancement Mode
Avalanche Rated
TO-263 (IXFA)
Fast Intrinsic Rectifier
G
S
D (Tab)
TO-220 (IXFP)
Symbol
VDSS
Test Conditions
Maximum Ratings
TJ = 25C to 150C
1000
1000
V
V
VDGR
TJ = 25C to 150C, RGS = 1M
VGSS
VGSM
Continuous
Transient
30
40
V
V
G
D
S
D (Tab)
ID25
IDM
TC = 25C
7
A
A
TO-247 (IXFH)
TC = 25C, Pulse Width Limited by TJM
18
IA
TC = 25C
TC = 25C
7
A
EAS
300
mJ
dv/dt
PD
IS IDM, VDD VDSS, TJ 150C
TC = 25C
10
V/ns
W
G
D
D (Tab)
S
300
TJ
-55 ... +150
150
C
C
C
G = Gate
S = Source
D
= Drain
TJM
Tstg
Tab = Drain
-55 ... +150
TL
TSOLD
Maximum Lead Temperature for Soldering
Plastic Body for 10s
300
260
°C
°C
Features
FC
Md
Mounting Force (TO-263)
Mounting Torque (TO-220 & TO-247)
10..65 / 2.2..14.6
1.13 / 10
N/lb
Nm/lb.in
International Standard Packages
Fast Intrinsic Rectifier
Avalanche Rated
Low RDS(ON) and QG
Low Package Inductance
Weight
TO-263
TO-220
TO-247
2.5
3.0
6.0
g
g
g
Advantages
Symbol
Test Conditions
Characteristic Values
High Power Density
Easy to Mount
Space Savings
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 250A
VDS = VGS, ID = 1mA
VGS = 30V, VDS = 0V
VDS = VDSS, VGS = 0V
1000
V
V
3.0
6.0
Applications
100 nA
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
IDSS
15 A
1 mA
TJ = 125C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
1.9
DS99924D(11/18)
© 2018 IXYS CORPORATION, All Rights Reserved
IXFA7N100P IXFP7N100P
IXFH7N100P
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
gfs
VDS = 20V, ID = 0.5 • ID25, Note 1
3.6
6.0
S
RGi
Gate Input Resistance
1.8
Ciss
Coss
Crss
2590
158
26
pF
pF
pF
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
25
49
42
44
ns
ns
ns
ns
Resistive Switching Times
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 10 (External)
Qg(on)
Qgs
47
21
21
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
RthCS
0.42 C/W
TO-220
TO-247
0.50
0.21
C/W
C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
IS
VGS = 0V, Note1
7
A
A
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
28
1.3
V
trr
QRM
IRM
300
C
ns
IF = 3.5A, -di/dt = 100A/μs
0.4
4.0
VR = 100V
A
Note
1. Pulse test, t 300s, duty cycle, d 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2 6,759,692
6,710,463
6,727,585
7,005,734B2 7,157,338B2
7,063,975B2
6,771,478B2 7,071,537
IXFA7N100P IXFP7N100P
IXFH7N100P
Fig. 2. Extended Output Characteristics @ TJ = 25oC
Fig. 1. Output Characteristics @ TJ = 25oC
7
6
5
4
3
2
1
0
14
12
10
8
V
= 10V
8V
GS
V
= 10V
GS
7V
8V
7V
6
4
6V
5V
6V
2
0
0
2
4
6
8
10
12
14
0
5
10
15
20
25
30
35
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 3.5A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125oC
7
6
5
4
3
2
1
0
3.0
V
= 10V
8V
GS
V
= 10V
GS
2.6
2.2
1.8
1.4
1.0
0.6
0.2
7V
I
= 7A
D
I
= 3.5A
D
6V
5V
-50
-25
0
25
50
75
100
125
150
0
3
6
9
12
15
18
21
24
27
TJ - Degrees Centigrade
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 3.5A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs. Case Temperature
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
8
7
6
5
4
3
2
1
0
V
= 10V
GS
T = 125oC
J
T = 25oC
J
0
2
4
6
8
10
12
14
-50
-25
0
25
50
75
100
125
150
TC - Degrees Centigrade
ID - Amperes
© 2018 IXYS CORPORATION, All Rights Reserved
IXFA7N100P IXFP7N100P
IXFH7N100P
Fig. 7. Input Admittance
Fig. 8. Transconductance
14
12
10
8
14
12
10
8
T = - 40oC
J
25oC
T
J
= 125oC
25oC
- 40oC
125oC
6
6
4
4
2
2
0
0
4.0
0.4
0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
1.2
40
0
2
4
6
8
10
12
14
16
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
Fig. 10. Gate Charge
30
25
20
15
10
5
16
V
I
= 500V
DS
14
12
10
8
= 3.5A
D
I
= 10mA
G
6
T = 125oC
J
4
T = 25oC
J
2
0
0
0
10
20
30
40
50
60
70
0.5
0.6
0.7
0.8
0.9
1.0
1.1
VSD - Volts
QG - NanoCoulombs
Fig. 14. Forward-Bias Safe Operating Area
Fig. 11. Capacitance
100
10,000
1,000
100
C
iss
R
Limit
)
DS(
on
10
1
25μs
100μs
1ms
C
C
oss
rss
0.1
0.01
o
T = 150 C
J
10ms
100ms
o
T
= 25 C
C
DC
f
= 1 MHz
5
Single Pulse
10
10
15
20
25
30
35
10
100
1,000
VDS - Volts
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFA7N100P IXFP7N100P
IXFH7N100P
Fig. 13. Maximum Transient Thermal Impedance
1
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2018 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_7N100P(56) 5-28-14-A
IXFA7N100P IXFP7N100P
IXFH7N100P
TO-263 Outline
1 - Gate
2,4 - Drain
3 - Source
TO-220 Outline
1 - Gate
2,4 - Drain
3 - Source
TO-247 Outline
1 - Gate
2,4 - Drain
3 - Source
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
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