IXFA76N15T2 [IXYS]
TrenchT2 HiperFET Power MOSFET; TrenchT2 HiperFET功率MOSFET
| 型号： | IXFA76N15T2 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | TrenchT2 HiperFET Power MOSFET |
| 文件： | 总6页 (文件大小：179K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Information
TrenchT2TM HiperFETTM
Power MOSFET
VDSS = 150V
ID25 = 76A
RDS(on) ≤ 20mΩ
IXFA76N15T2
IXFP76N15T2
N-Channel Enhancement Mode
Avalanche Rated
TO-263 AA (IXFA)
Fast Intrnsic Rectifier
G
S
Symbol
VDSS
Test Conditions
Maximum Ratings
D (TAB)
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
150
150
V
V
TO-220AB (IXFP)
VDGR
VGSS
VGSM
Continuous
Transient
± 20
± 30
V
V
ID25
IDM
TC = 25°C
76
A
A
G
TC = 25°C, Pulse Width Limited by TJM
200
D
D (TAB)
= Drain
S
IA
TC = 25°C
TC = 25°C
38
A
EAS
500
mJ
G = Gate
D
S = Source
TAB = Drain
dV/dt
PD
IS ≤ IDM,, VDD ≤ VDSS,TJ ≤ 175°C
TC = 25°C
15
V/ns
W
350
Features
TJ
-55 ... +175
175
°C
°C
°C
TJM
Tstg
z International Standard Packages
z 175°C Operating Temperature
z High Current Handling Capability
z Fast Intrinsic Rectifier
-55 ... +175
TL
Tsold
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
300
260
°C
°C
z Dynamic dV/dt Rated
Md
Mounting Torque (TO-220)
1.13 / 10
Nm/lb.in.
z
Low RDS(on)
Weight
TO-263
TO-220
2.5
3.0
g
g
Advantages
z
Easy to Mount
Space Savings
High Power Density
z
Symbol
Test Conditions
Characteristic Values
z
(TJ = 25°C Unless Otherwise Specified)
Min. Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 250μA
VDS = VGS, ID = 250μA
VGS = ± 20V, VDS = 0V
VDS = VDSS, VGS = 0V
150
2.5
V
V
Applications
4.5
z DC-DC Converters
z Battery Chargers
±200 nA
μA
z Switched-Mode and Resonant-Mode
Power Supplies
IDSS
5
TJ = 150°C
VGS = 10V, ID = 0.5 • ID25, Notes 1, 2
750 μA
20 mΩ
z DC Choppers
z AC Motor Drives
RDS(on)
z Uninterruptible Power Supplies
z High Speed Power Switching
Applications
DS100176(08/09)
© 2009 IXYS CORPORATION, All Rights Reserved
IXFA76N15T2
IXFP76N15T2
Symbol
Test Conditions
Characteristic Values
Min. Typ. Max.
TO-263 (IXFA) Outline
(TJ = 25°C, Unless Otherwise Specified)
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
50
80
S
Ciss
Coss
Crss
5800
490
85
pF
pF
pF
td(on)
tr
td(off)
tf
17
19
25
14
ns
ns
ns
ns
1. Gate
Resistive Switching Times
2. Collector
3. Emitter
4. Collector
Bottom
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 5Ω (External)
Side
Qg(on)
Qgs
97
29
30
nC
nC
nC
Dim.
Millimeter
Inches
Min. Max.
Min.
Max.
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
A
b
b2
4.06
0.51
1.14
4.83
0.99
1.40
.160
.020
.045
.190
.039
.055
Qgd
c
c2
0.40
1.14
0.74
1.40
.016
.045
.029
.055
RthJC
RthCH
0.43 °C/W
°C/W
TO-220
0.50
D
D1
8.64
8.00
9.65
8.89
.340
.280
.380
.320
E
9.65
10.41
.380
.405
E1
e
L
L1
L2
L3
L4
6.22
2.54
14.61
2.29
1.02
1.27
0
8.13
BSC
15.88
2.79
1.40
1.78
0.13
.270
.100 BSC
.320
Source-Drain Diode
.575
.090
.040
.050
0
.625
.110
.055
.070
.005
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min. Typ.
Max.
IS
VGS = 0V
76
A
A
V
ISM
VSD
Repetitive, Pulse width limited by TJM
IF = 38A, VGS = 0V, Note 1
300
1.5
TO-220 (IXFP) Outline
trr
69
5.7
ns
A
IF = 38A, VGS = 0V
IRM
QRM
-di/dt = 100A/μs
VR = 75V
197
nC
Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
2. On through-hole packages, RDS(on) Kelvin test contact
location must be 5mm or less from the package body.
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXFA76N15T2
IXFP76N15T2
Fig. 2. Extended Output Characteristics
Fig. 1. Output Characteristics
@ 25ºC
@ 25ºC
240
200
160
120
80
80
70
60
50
40
30
20
10
0
VGS = 15V
10V
VGS = 15V
10V
8V
7V
6V
7V
6V
5V
40
5V
0
0
2
4
6
8
10
12
14
16
18
20
22
24
0.0
0.0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
4.5
220
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 38A Value vs.
Junction Temperature
Fig. 3. Output Characteristics
@ 150ºC
80
70
60
50
40
30
20
10
0
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
VGS = 15V
VGS = 10V
10V
7V
I D = 76A
6V
5V
I D = 38A
4V
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
-50
-25
0
25
50
75
100
125
150
175
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 38A Value vs.
Drain Current
Fig. 6. Drain Current vs. Case Temperature
80
70
60
50
40
30
20
10
0
4.6
4.2
3.8
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
VGS = 10V
TJ = 175ºC
TJ = 25ºC
20
40
60
80
100
120
140
160
180
200
-50
-25
0
25
50
75
100
125
150
175
ID - Amperes
TC - Degrees Centigrade
© 2009 IXYS CORPORATION, All Rights Reserved
IXFA76N15T2
IXFP76N15T2
Fig. 7. Input Admittance
Fig. 8. Transconductance
140
120
100
80
140
120
100
80
TJ = - 40ºC
TJ = 150ºC
25ºC
25ºC
- 40ºC
150ºC
60
60
40
40
20
20
0
0
0
0
1
20
40
60
80
ID - Amperes
100
120
140
160
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
2.0
40
VGS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
10
9
8
7
6
5
4
3
2
1
0
240
200
160
120
80
VDS = 75V
I D = 38A
I
G = 10mA
TJ = 150ºC
TJ = 25ºC
40
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
10
20
30
40
50
60
70
80
90
100
QG - NanoCoulombs
VSD - Volts
Fig. 11. Capacitance
Fig. 12. Forward-Bias Safe Operating Area
10,000
1,000
100
1,000.0
100.0
10.0
1.0
RDS(on) Limit
C
iss
25µs
100µs
C
C
oss
1ms
10ms
TJ = 175ºC
rss
TC = 25ºC
DC
= 1 MHz
5
f
Single Pulse
0.1
10
10
100
1000
0
10
15
20
25
30
35
VDS - Volts
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: F_76N15T2(4V)7-02-09
IXFA76N15T2
IXFP76N15T2
Fig. 13. Resistive Turn-on
Fig. 14. Resistive Turn-on
Rise Time vs. Junction Temperature
Rise Time vs. Drain Current
22
21
20
19
18
17
16
22
21
20
19
18
17
RG = 5ꢀ
RG = 5Ω
VGS = 10V
VDS = 75V
VGS = 10V
VDS = 75V
TJ = 125ºC
TJ = 25ºC
I D = 152A
I D = 76A
30
40
50
60
70
80
90
100 110 120 130 140 150 160
25
35
45
55
65
75
85
95
105
115
125
TJ - Degrees Centigrade
ID - Amperes
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
22
20
19
18
17
16
15
14
16.0
15.5
15.0
14.5
14.0
13.5
13.0
30
28
26
24
22
20
18
t r
t
d(on) - - - -
tf
t
d(off) - - - -
RG = 5Ω, VGS = 10V
DS = 75V
TJ = 125ºC, VGS = 10V
VDS = 75V
21
20
19
18
17
16
V
I D = 76A, 152A
I D = 76A, 152A
25
35
45
55
65
75
85
95
105
115
125
4
6
8
10
12
14
16
18
20
TJ - Degrees Centigrade
RG - Ohms
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
18
17
16
15
14
13
12
11
34
32
30
28
26
24
22
20
17
16
15
14
13
12
11
10
30
t f
t
d(off) - - - -
RG = 5ꢀ, VGS = 10V
DS = 75V
tf
t
d(off) - - - -
29
28
27
26
25
24
23
TJ = 125ºC, VGS = 10V
V
VDS = 75V
TJ = 125ºC
I D = 152A
I D = 76A
TJ = 25ºC
30
40
50
60
70
80
90 100 110 120 130 140 150 160
ID - Amperes
4
6
8
10
12
14
16
18
20
RG - Ohms
© 2009 IXYS CORPORATION, All Rights Reserved
IXFA76N15T2
IXFP76N15T2
Fig. 19. Maximum Transient Thermal Impedance
1.000
0.100
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Second
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: F_76N15T2(4V)7-02-09
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