IXFT120N15P [IXYS]
PolarHT HiPerFET Power MOSFET; PolarHT HiPerFET功率MOSFET
| 型号： | IXFT120N15P |
| 厂家： | 
IXYS CORPORATION |
| 描述： | PolarHT HiPerFET Power MOSFET |
| 文件： | 总5页 (文件大小：177K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PolarHTTM HiPerFET
Power MOSFET
IXFH 120N15P
IXFT 120N15P
VDSS = 150 V
ID25 = 120 A
RDS(on) ≤ 16 mΩ
trr
≤ 200 ns
N-Channel Enhancement Mode
Avalanche Energy Rated
Fast Intrinsic Diode
Symbol
Test Conditions
Maximum Ratings
TO-247 (IXFH)
VDSS
VDGR
TJ = 25° C to 175° C
TJ = 25° C to 175° C; RGS = 1 MΩ
150
150
V
V
VDSS
VGSM
Continuous
Transient
20
30
V
V
D (TAB)
G
D
S
ID25
TC =25° C
120
75
A
A
A
IL(RMS)
IDM
External lead current limit
TC = 25° C, pulse width limited by TJM
260
TO-268 (IXFT)
IAR
TC =25° C
60
A
EAR
EAS
TC =25° C
TC =25° C
60
mJ
J
2.0
G
S
dv/dt
PD
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS
TJ ≤150° C, RG = 4 Ω
,
10
V/ns
D (TAB)
TC =25° C
600
W
G = Gate
D = Drain
S = Source
TAB = Drain
TJ
TJM
Tstg
-55 ... +175
175
-55 ... +150
°C
°C
°C
TL
TSOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic case for 10 s
300
260
°C
°C
Features
Md
Mounting torque
(TO-3P)
1.13/10 Nm/lb.in.
l
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
l
Weight
TO-247
TO-268
6.0
5.0
g
g
l
Symbol
Test Conditions
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min. Typ.
Max.
Advantages
BVDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 4 mA
VGS = 20 VDC, VDS = 0
150
V
V
l
Easy to mount
Space savings
High power density
l
3.0
5.0
l
100
nA
IDSS
VDS = VDSS
VGS = 0 V
25
500
µA
µA
TJ = 175° C
RDS(on)
VGS = 10 V, ID = 0.5 ID25
16 mΩ
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
DS99210E(12/05)
© 2006 IXYS All rights reserved
IXFH 120N15P
IXFT 120N15P
Symbol
gfs
Test Conditions
Characteristic Values
TO-247 (IXFH) Outline
(TJ = 25° C, unless otherwise specified)
Min.
Typ.
Max.
VDS= 10 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
40
60
S
Ciss
Coss
Crss
4900
1300
330
pF
pF
pF
td(on)
tr
td(off)
tf
33
42
85
26
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
RG = 4 Ω (External)
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
Qg(on)
Qgs
150
40
nC
nC
nC
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
Qgd
80
RthJC
RthCS
0.25° C/W
° C/W
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
(TO-3P)
0.21
e
5.20
5.72 0.205 0.225
L
L1
19.81 20.32
4.50
.780 .800
.177
∅P 3.55
3.65
.140 .144
Source-Drain Diode
Characteristic Values
Q
5.89
6.40 0.232 0.252
(TJ = 25°C, unless otherwise specified)
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
Symbol
IS
Test Conditions
Min.
Typ.
Max.
VGS = 0 V
Repetitive
120
A
A
V
TO-268 (IXFT) Outline
ISM
260
1.5
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤300 µs, duty cycle d≤ 2 %
trr
IF = 25 A, -di/dt = 100 A/µs
200 ns
QRM
IRM
VR = 100 V, VGS = 0 V
600
6
nC
Α
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,727,585
6,534,343
6,583,505
6,710,405B2 6,759,692
6,710,463
6,771,478 B2
IXFH 120N15P
IXFT 120N15P
Fig. 1. Output Characteristics
@ 25
Fig. 2. Extended Output Characteristics
@ 25 C
º
º
C
120
100
80
60
40
20
0
280
240
200
160
120
80
VGS = 10V
9V
V
= 10V
9V
GS
8V
7V
8V
7V
6V
5V
40
6V
9
0
0
1
2
3
4
5
6
7
8
10
0
0.5
1
1.5
2
2.5
VD S - Volts
VD S - Volts
Fig. 3. Output Characteristics
@ 150
Fig. 4. RDS(on Normalized to 0.5 ID25
Value vs. Junction Temperature
)
º
C
120
100
80
60
40
20
0
2.8
2.6
2.4
2.2
2
VGS = 10V
9V
VGS = 10V
8V
ID = 120A
7V
1.8
1.6
1.4
1.2
1
ID = 60A
6V
5V
4
0.8
0.6
0
1
2
VD S - Volts
3
5
-50 -25
0
25
TJ - Degrees Centigrade
50
75 100 125 150 175
Fig. 5. RDS(on) Normalized to 0.5 ID25
Value vs. Drain Current
Fig. 6. Drain Current vs. Case
Temperature
90
80
70
60
50
40
30
20
10
0
4
3.5
3
External Lead Current Limit
º
TJ = 175 C
2.5
2
VGS = 10V
V
GS
= 15V
1.5
1
º
TJ = 25 C
0.5
-50 -25
0
25
50
TC - Degrees Centigrade
75 100 125 150 175
0
30 60 90 120 150 180 210 240 270 300
I D - Amperes
© 2006 IXYS All rights reserved
IXFH 120N15P
IXFT 120N15P
Fig. 8. Transconductance
Fig. 7. Input Admittance
210
180
150
120
90
90
80
70
60
50
40
30
20
10
0
º
TJ = -40 C
25ºC
150ºC
º
TJ = 150 C
60
25ºC
-40ºC
30
0
4
0.4
0
4.5
5
5.5
6
6.5
VG S - Volts
7
7.5
8
8.5
9
0
30
60
90 120 150 180 210 240 270
I D - Amperes
Fig. 9. Source Current vs.
Source-To-Drain Voltage
Fig. 10. Gate Charge
10
9
8
7
6
5
4
3
2
1
0
300
250
200
150
100
50
VDS = 75V
ID = 60A
I
G = 10mA
º
TJ = 150 C
º
TJ = 25 C
0
0.6
0.8
1
1.2
VS D - Volts
1.4
1.6
1.8
0
20
40
60
Q G - nanoCoulombs
80
100 120 140 160
Fig. 12. Forward-Bias
Safe Operating Area
Fig. 11. Capacitance
10,000
1,000
100
1000
100
10
º
TJ = 175 C
= 25ºC
TC
RDS(on) Limit
C
iss
25µs
100µs
C
oss
1ms
10ms
C
rss
f = 1MHz
DC
5
10
15 20
VDS - Volts
25
30
35
40
10
100
VD S - Volts
1000
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH 120N15P
IXFT 120N15P
Fig . 13 . M a xim u m T r a n s ie n t T h e r m a l Re s is ta n c e
1 . 0 0
0 . 1 0
0 . 0 1
0 . 1
1
1 0
1 0 0
1 0 0 0
Puls e W id th - millis ec o n ds
© 2006 IXYS All rights reserved
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