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IXFT120N30X3HV [IXYS]

Power Field-Effect Transistor,;
IXFT120N30X3HV
型号： IXFT120N30X3HV
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

Power Field-Effect Transistor,
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Advance Technical Information  
X3-Class HiPerFETTM  
Power MOSFET  
VDSS = 300V  
ID25 = 120A  
RDS(on) 11.0m  
IXFT120N30X3HV  
IXFH120N30X3  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-268HV (IXFT)  
G
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
S
TJ = 25C to 150C  
300  
300  
V
V
D (Tab)  
VDGR  
TJ = 25C to 150C, RGS = 1M  
TO-247 (IXFH)  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
ID25  
IDM  
TC = 25C  
120  
280  
A
A
TC = 25C, Pulse Width Limited by TJM  
G
D
IA  
TC = 25C  
TC = 25C  
60  
2
A
J
S
D (Tab)  
D = Drain  
EAS  
G = Gate  
S = Source  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
20  
V/ns  
W
Tab = Drain  
735  
TJ  
-55 ... +150  
150  
C  
C  
C  
TJM  
Tstg  
-55 ... +150  
Features  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
International Standard Packages  
Low RDS(ON) and QG  
Md  
Mounting Torque (TO-247)  
1.13 / 10  
Nm/lb.in  
Avalanche Rated  
Weight  
TO-268HV  
TO-247  
4
6
g
g
Low Package Inductance  
Advantages  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 4mA  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
300  
V
V
Applications  
2.5  
4.5  
Switch-Mode and Resonant-Mode  
100 nA  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
IDSS  
25 A  
1 mA  
TJ = 125C  
Robotics and Servo Controls  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
8.6  
11.0 m  
DS100865A(11/17)  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXFT120N30X3HV  
IXFH120N30X3  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
gfs  
VDS = 10V, ID = 60A, Note 1  
Gate Input Resistance  
60  
100  
S
RGi  
1.7  
Ciss  
Coss  
Crss  
10.5  
1376  
3
nF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
Effective Output Capacitance  
Co(er)  
Co(tr)  
530  
pF  
pF  
Energy related  
Time related  
VGS = 0V  
DS = 0.8 • VDSS  
2100  
V
td(on)  
tr  
td(off)  
tf  
30  
30  
ns  
ns  
ns  
ns  
Resistive Switching Times  
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
V
130  
14  
RG = 3(External)  
Qg(on)  
Qgs  
170  
50  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
50  
RthJC  
RthCS  
0.17 C/W  
C/W  
TO-247  
0.21  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
IS  
VGS = 0V  
120  
A
A
ISM  
VSD  
Repetitive, pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
480  
1.4  
V
trr  
QRM  
IRM  
145  
930  
13  
ns  
IF = 60A, -di/dt = 100A/μs  
nC  
VR = 100V  
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  
IXFT120N30X3HV  
IXFH120N30X3  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
Fig. 1. Output Characteristics @ TJ = 25oC  
120  
100  
80  
60  
40  
20  
0
500  
450  
400  
350  
300  
250  
200  
150  
100  
50  
V
= 10V  
GS  
V
= 10V  
GS  
8V  
9V  
8V  
7V  
7V  
6V  
5V  
6V  
5V  
0
0
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
0
5
10  
15  
20  
25  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 60A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125oC  
120  
100  
80  
60  
40  
20  
0
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
V
= 10V  
8V  
GS  
V
= 10V  
GS  
7V  
I
= 120A  
D
6V  
5V  
I
= 60A  
D
4V  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0.5  
1
1.5  
2
2.5  
3
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 60A Value vs.  
Drain Current  
Fig. 6. Normalized Breakdown & Threshold Voltages  
vs. Junction Temperature  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
V
= 10V  
GS  
BV  
DSS  
o
T
= 125 C  
J
o
V
GS(th)  
T
J
= 25 C  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
160  
50  
100  
150  
200  
250  
300  
350  
400  
450  
500  
TJ - Degrees Centigrade  
ID - Amperes  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXFT120N30X3HV  
IXFH120N30X3  
Fig. 7. Maximum Drain Current vs. Case Temperature  
Fig. 8. Input Admittance  
180  
160  
140  
120  
100  
80  
140  
120  
100  
80  
V
= 10V  
DS  
60  
o
T
J
= 125 C  
60  
o
40  
25 C  
o
40  
- 40 C  
20  
20  
0
0
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TC - Degrees Centigrade  
VGS - Volts  
Fig. 9. Transconductance  
Fig. 10. Forward Voltage Drop of Intrinsic Diode  
200  
180  
160  
140  
120  
100  
80  
400  
350  
300  
250  
200  
150  
100  
50  
o
T = - 40 C  
J
V
= 10V  
DS  
o
25 C  
o
125 C  
o
T = 125 C  
J
60  
40  
o
T = 25 C  
J
20  
0
0
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
VSD - Volts  
ID - Amperes  
Fig. 12. Capacitance  
Fig. 11. Gate Charge  
100,000  
10,000  
1,000  
100  
10  
9
8
7
6
5
4
3
2
1
0
V
= 150V  
DS  
I
I
= 60A  
D
G
C
C
iss  
= 10mA  
oss  
C
rss  
10  
= 1 MHz  
f
1
1
10  
100  
1,000  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
QG - NanoCoulombs  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFT120N30X3HV  
IXFH120N30X3  
Fig. 13. Output Capacitance Stored Energy  
Fig. 14. Forward-Bias Safe Operating Area  
1000  
100  
10  
24  
20  
16  
12  
8
R
DS(  
on  
Limit  
)
25μs  
100μs  
1
o
1ms  
T = 150 C  
J
4
o
T
C
= 25 C  
10ms  
DC  
Single Pulse  
0
0.1  
200
0
50  
100  
150  
250  
300  
1
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
Fig. 15. Maximum Transient Thermal Impedance  
aaaaa  
0.3  
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Second  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_120N30X3 (27-S301) 11-07-17  
IXFT120N30X3HV  
IXFH120N30X3  
TO-268HV Outline  
PINS:  
1 - Gate 2 - Source  
3 - Drain  
TO-247 Outline  
D
A
A
0P  
+
B
O 0K M D B M  
E
A2  
A2  
Q
S
D2  
+
+
R
D1  
D
0P1  
4
1
2
3
ixys option  
C
L1  
E1  
L
A1  
b
b2  
c
b4  
PINS: 1 - Gate  
e
+
O
2, 4 - Drain  
3 - Source  
J
M
C
A M  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  

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